Programming methods to increase window for reverse write 3D cell
First Claim
Patent Images
1. A method of operating a nonvolatile memory cell, comprising:
- providing the nonvolatile memory cell comprising a diode which is fabricated in a first resistivity, unprogrammed state; and
applying a forward bias to the diode having a magnitude greater than a minimum voltage required for programming the diode to switch the diode to a second resistivity, programmed state, wherein the second resistivity state is lower than the first resistivity state.
4 Assignments
0 Petitions
Accused Products
Abstract
A method of operating a nonvolatile memory cell includes providing the nonvolatile memory cell comprising a diode which is fabricated in a first resistivity, unprogrammed state, and applying a forward bias to the diode having a magnitude greater than a minimum voltage required for programming the diode to switch the diode to a second resistivity, programmed state. The second resistivity state is lower than the first resistivity state.
-
Citations
20 Claims
-
1. A method of operating a nonvolatile memory cell, comprising:
-
providing the nonvolatile memory cell comprising a diode which is fabricated in a first resistivity, unprogrammed state; and
applying a forward bias to the diode having a magnitude greater than a minimum voltage required for programming the diode to switch the diode to a second resistivity, programmed state, wherein the second resistivity state is lower than the first resistivity state. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
-
-
11. A method of operating a nonvolatile memory cell, comprising:
-
providing the nonvolatile memory cell comprising a diode which is fabricated in a first resistivity, unprogrammed state; and
applying a plurality of forward bias pulses to the diode to switch the diode to a second resistivity, programmed state, wherein the second resistivity state is lower than the first resistivity state. - View Dependent Claims (12, 13, 14, 15, 16, 17, 18, 19, 20)
-
Specification