Program for controlling laser apparatus and recording medium for recording program for controlling laser apparatus and capable of being read out by computer

• US 20080009120A1
• Filed: 11/01/2006
• Published: 01/10/2008
• Est. Priority Date: 11/30/2001
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Mukao, Kyouichi, Miyanaga, Akiharu
• Granted Patent: US 7,588,974 B2
• Time in Patent Office: Days
• US Class Current: 438/401
• CPC Class Codes: G05B 19/4097 characterised by using design data to control NC machines, e.g. CAD/CAM G05B19/4093 takes precedence
• CPC Class Codes: G05B 2219/45027 Masking, project image on wafer semiconductor, photo tracer
• CPC Class Codes: Y02P 90/02 Total factory control, e.g. smart factories, flexible manufacturing systems [FMS] or integrated manufacturing systems [IMS]

Abstract

The object of the present invention is to solve problems of treatment time when using an SLS method or continuous-oscillation laser. An indispensable portion is scanned with a laser beam in order to crystallize a semiconductor film by driving a laser and so on in accordance with the positions of islands instead of scanning and irradiating the whole semiconductor film. The present invention makes it possible to omit the time for irradiating a portion to be removed through patterning after crystallizing the semiconductor film with a laser beam and greatly shorten the treatment time for one substrate.

Claims

1. A method of manufacturing a semiconductor device comprising steps of:

forming a semiconductor film provided with a marker in accordance with information on computer aided design masks for forming the semiconductor device over a substrate;

extracting positional and directional information for irradiating a laser beam over the substrate;

obtaining an optimum driving condition of a laser system in accordance with the positional and directional information;

controlling a position to be scanned with the laser beam in accordance with a position of the marker; and

controlling the laser system in accordance with the optimum driving condition of the laser system.

2. The method of manufacturing a semiconductor device according to claim 1, wherein the optimum driving condition of the laser system is obtained by using one of optimization algorithm among a linear programming method, branch and bound method, neuron circuit network, and annealing method.

3. The method of manufacturing a semiconductor device according to claim 1, wherein the optimum driving condition of the laser system is obtained by using an evolutionary technique represented by a genetic algorithm.

4. The method of manufacturing a semiconductor device according to claim 1, the laser beam is irradiated over the substrate for crystallizing the semiconductor film.

5. A method of manufacturing a semiconductor device comprising steps of:

forming a semiconductor film provided with a marker in accordance with information on computer aided design masks for forming the semiconductor device over a substrate;

extracting positional and directional information for irradiating a laser beam over the substrate;

storing the positional and directional information in a database;

obtaining an optimum driving condition of a laser system in accordance with the positional and directional information stored in the database; and

controlling a position to be scanned with the laser beam in accordance with a position of the marker; and

controlling the laser system in accordance with the optimum driving condition of the laser system.

6. The method of manufacturing a semiconductor device according to claim 5, wherein the optimum driving condition of the laser system is obtained by using one of optimization algorithm among a linear programming method, branch and bound method, neuron circuit network, and annealing method.

7. The method of manufacturing a semiconductor device according to claim 5, wherein the optimum driving condition of the laser system is obtained by using an evolutionary technique represented by a genetic algorithm.

8. The method of manufacturing a semiconductor device according to claim 5, the laser beam is irradiated over the substrate for crystallizing the semiconductor film.

9. A method of manufacturing a semiconductor device comprising steps of:

forming a semiconductor film provided with a marker in accordance with information on computer aided design masks for forming the semiconductor device over a substrate;

extracting positional and directional information for irradiating a laser beam over the substrate;

storing the positional and directional information in a database;

obtaining an optimum driving condition of a laser system for minimizing laser treatment time by considering speed of drive of the laser system and time required for changing drives of the laser system in accordance with the positional and directional information stored in the database;

controlling a position to be scanned with the laser beam in accordance with a position of the marker; and

controlling the laser system in accordance with the optimum driving condition of the laser system.

10. The method of manufacturing a semiconductor device according to claim 9, wherein the optimum driving condition of the laser system is obtained by using one of optimization algorithm among a linear programming method, branch and bound method, neuron circuit network, and annealing method.

11. The method of manufacturing a semiconductor device according to claim 9, wherein the optimum driving condition of the laser system is obtained by using an evolution-theoretical technique represented by a genetic algorithm.

12. The method of manufacturing a semiconductor device according to claim 9, the laser beam is irradiated over the substrate for crystallizing the semiconductor film.

13. A method of manufacturing a semiconductor device comprising steps of:

forming a semiconductor film provided with a marker in accordance with information on computer aided design masks for forming the semiconductor device over a substrate;

extracting positional and directional information for irradiating a laser beam over the substrate;

storing the positional and directional information in a database;

obtaining an optimum driving condition of a laser system for minimizing laser treatment time by considering speed of drive of the laser system, time required for changing drives of the laser system, and time required for starting actual driving after generating a driving command in accordance with the positional and directional information stored in the database;

controlling a position to be scanned with the laser beam in accordance with a position of the marker; and

controlling the laser system in accordance with the optimum driving condition of the laser system.

14. The method of manufacturing a semiconductor device according to claim 13, wherein the optimum driving condition of the laser system is obtained by using one of optimization algorithm among a linear programming method, branch and bound method, neuron circuit network, and annealing method.

15. The method of manufacturing a semiconductor device according to claim 13, wherein the optimum driving condition of the laser system is obtained by using an evolution-theoretical technique represented by a genetic algorithm.

16. The method of manufacturing a semiconductor device according to claim 13, the laser beam is irradiated over the substrate for crystallizing the semiconductor film.

17. A method of manufacturing a semiconductor device comprising steps of:

forming a semiconductor film provided with a marker in accordance with information on computer aided design masks for forming the semiconductor device over a substrate;

extracting positional and directional information for irradiating a laser beam over the substrate;

obtaining an optimum driving condition of a laser system for minimizing laser treatment time by considering speed of drive of the laser system and time required for changing drives of the laser system in accordance with the positional and directional information;

controlling a position to be scanned with the laser beam in accordance with a position of the marker; and

controlling the laser system in accordance with the optimum driving condition of the laser system.

18. The method of manufacturing a semiconductor device according to claim 17, wherein the optimum driving condition of the laser system is obtained by using one of optimization algorithm among a linear programming method, branch and bound method, neuron circuit network, and annealing method.

19. The method of manufacturing a semiconductor device according to claim 17, wherein the optimum driving condition of the laser system is obtained by using an evolution-theoretical technique represented by a genetic algorithm.

20. The method of manufacturing a semiconductor device according to claim 17, the laser beam is irradiated over the substrate for crystallizing the semiconductor film.

21. A method of manufacturing a semiconductor device comprising steps of:

forming a semiconductor film provided with a marker in accordance with information on computer aided design masks for forming the semiconductor device over a substrate;

extracting positional and directional information for irradiating a laser beam over the substrate;

obtaining an optimum driving condition of at least one of a laser, mirror, slit, and stage in accordance with the positional and directional information;

controlling a position to be scanned with the laser beam in accordance with a position of the marker; and

controlling at least one of the laser, mirror, slit, and stage in accordance with the optimum driving condition.

22. The method of manufacturing a semiconductor device according to claim 21, wherein the optimum driving condition is obtained by using one of optimization algorithm among a linear programming method, branch and bound method, neuron circuit network, and annealing method.

23. The method of manufacturing a semiconductor device according to claim 21, wherein the optimum driving condition is obtained by using an evolutionary technique represented by a genetic algorithm.

24. The method of manufacturing a semiconductor device according to claim 21, the laser beam is irradiated over the substrate for crystallizing the semiconductor film.

25. A method of manufacturing a semiconductor device comprising steps of:

forming a semiconductor film provided with a marker in accordance with information on computer aided design masks for forming the semiconductor device over a substrate;

extracting positional and directional information for irradiating a laser beam over the substrate;

obtaining an optimum driving condition of at least one of a laser, mirror, slit, and stage and minimizing a laser treatment time in accordance with the positional and directional information;

controlling a position to be scanned with the laser beam in accordance with a position of the marker; and

controlling at least one of the laser, mirror, slit, and stage in accordance with the optimum driving condition.

26. The method of manufacturing a semiconductor device according to claim 25, wherein the optimum driving condition is obtained by using one of optimization algorithm among a linear programming method, branch and bound method, neuron circuit network, and annealing method.

27. The method of manufacturing a semiconductor device according to claim 25, wherein the optimum driving condition is obtained by using an evolutionary technique represented by a genetic algorithm.

28. The method of manufacturing a semiconductor device according to claim 25, the laser beam is irradiated over the substrate for crystallizing the semiconductor film.