Ultra high vacuum deposition of PCMO material
First Claim
Patent Images
1. A method for forming a semiconductor, comprising:
- forming a low oxygen YBa2Cu3O7 (Y-123) on Pr0.67Ca0.33MnO3 (PCMO) layer;
forming an intermediate oxygen PCMO layer above the low oxygen PCMO layer; and
forming a high oxygen PCMO layer above the intermediate oxygen PCMO layer.
1 Assignment
0 Petitions
Accused Products
Abstract
Systems and methods are disclosed to form an exemplary memory structure by forming patterned semiconductor structures on a wafer; moving the wafer to a back-biased FTS deposition chamber; providing ultra high vacuum condition; and depositing PCMO material on patterned semiconductor structure.
-
Citations
20 Claims
-
1. A method for forming a semiconductor, comprising:
-
forming a low oxygen YBa2Cu3O7 (Y-123) on Pr0.67Ca0.33MnO3 (PCMO) layer; forming an intermediate oxygen PCMO layer above the low oxygen PCMO layer; and forming a high oxygen PCMO layer above the intermediate oxygen PCMO layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
-
-
11. A facing targets sputtering device for semiconductor fabrication, comprising:
-
an air-tight chamber in which an inert gas is admittable and exhaustible; a pair of target plates placed at opposite ends of said air-tight chamber respectively so as to face each other and form a plasma region therebetween; a pair of magnets respectively disposed adjacent to said target plates such that magnet poles of different polarities face each other across said plasma region thereby to establish a magnetic field of said plasma region between said target plates; a substrate holder disposed adjacent to said plasma region, said substrate holder adapted to hold a substrate on which an alloyed thin film is to be deposited; a back-bias power supply coupled to the substrate holder;
wherein the chamber temperature is maintained at 380 degrees Celsius or less, a back-bias voltage greater than 80 volts, and an oxygen flow of at least 17%;forming a first oxygen-rich YBa2Cu3O7 (Y-123) on Pr0.67Ca0.33MnO3 (PCMO) layer; forming an oxygent-deficit PCMO layer above the first oxygen rich PCMO layer; and forming a second oxygen-rich PCMO layer above the oxygen deficit PCMO layer. - View Dependent Claims (12, 13, 14, 15, 16, 17, 18, 19)
-
-
20. A method to form a memory device, comprising:
-
forming patterned semiconductor structures on a wafer; moving the wafer to a back-biased FTS deposition chamber; providing ultra high vacuum condition; and depositing PCMO material on patterned semiconductor structure.
-
Specification