METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

• US 20080012037A1
• Filed: 09/21/2007
• Published: 01/17/2008
• Est. Priority Date: 01/24/2005
• Status: Active Grant

• Current Assignee: Pannova Semic, LLC (Vector Capital Corporation)
• Original Assignee: Matsushita Electric Industrial Company Limited (Panasonic Holdings Corporation)
• Inventors: MAEDA, SYUUSAKU
• Granted Patent: US 7,875,898 B2
• Time in Patent Office: Days
• US Class Current: 257/99
• CPC Class Codes: B23K 2103/172 wherein at least one of the layers is non-metallic
• CPC Class Codes: B23K 2103/50 Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
• CPC Class Codes: B23K 26/40 taking account of the properties of the material involved
• CPC Class Codes: H01L 21/78 with subsequent division of the substrate into plural individual devices cutting to change the surface-physical characteristics or shape of semiconductor bodies H01L21/304
• CPC Class Codes: H01L 33/0095 Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination

Abstract

The inventive method for manufacturing a semiconductor device is a method for manufacturing a semiconductor device using irradiation with laser light to partition a substrate having semiconductor layers formed thereon, with gallium contained in at least one of the substrate and the semiconductor layers, wherein the method comprises: forming grooves to be used as boundaries between individual substrates by irradiating the substrate along partitioning locations with laser light, immersing the substrate into an acid solution, and partitioning the substrate into individual substrates along the boundaries where grooves are formed. In this manner, it provides a method for manufacturing a semiconductor device in which, during the partitioning of a gallium-containing semiconductor device substrate, deposits of gallium compounds adhered during laser irradiation are removed, partitioning surfaces are formed flat and uniform, and the incidence of electrode continuity failures and resin peeling is low.

Claims

1-12. -12. (canceled)

13. A semiconductor device manufactured by using irradiation with laser light to partition a substrate having semiconductor layers formed thereon, with gallium contained in at least one of the substrate and the semiconductor layers, the semiconductor device being obtained by

forming grooves to be used as boundaries between individual substrates by irradiating the substrate along partitioning locations with laser light,

partitioning the substrate into the individual substrates along the boundaries where the grooves are formed,

immersing the substrate into an acid solution before or after the foregoing partitioning so that deposits of gallium compounds adhering to the substrate are removed, and

sealing the individual substrates with a resin.

14. The semiconductor device according to claim 13, wherein locations irradiated with laser light have grooves formed by irradiation on the side opposite the side on which the semiconductor layers are formed.

15. The semiconductor device according to claim 13, wherein the grooves are formed by performing irradiation with laser light in an oblique direction so as to form quasi V-shaped cross-sections.

16. The semiconductor device according to claim 13, wherein locations irradiated with laser light have grooves formed by irradiation on the side on which the semiconductor layers are formed.

17. The semiconductor device according to claim 13, wherein the acid solution is a solution whose main ingredient is hydrochloric acid or nitric acid.

18. The semiconductor device according to claim 13, wherein the semiconductor device is a light-emitting element.

19. The semiconductor device according to claim 13, wherein the grooves extend to not less than 30% of the thickness of the substrate.

20. The semiconductor device according to claim 18, wherein the light-emitting element has an n-type semiconductor layer and a p-type semiconductor layer formed on top of the substrate.

21. The semiconductor device according to claim 20, wherein a Pt layer and, on top of it, a rhodium layer, are formed in the p-type semiconductor layer region in order to establish an ohmic contact with the p-type semiconductor layer, thereby producing a dual layer structure acting as a reflective film, with a p-type electrode composed of gold formed thereon.

22. The semiconductor device according to claim 20, wherein a Ti layer and, on top of it, a Au layer, are formed in the n-type semiconductor layer region in order to establish an ohmic contact with the n-type semiconductor layer, thereby producing a dual layer structure acting as an n-type electrode.

23. A semiconductor device manufactured by using irradiation with laser light to partition a substrate having semiconductor layers formed thereon, with gallium contained in at least one of the substrate and the semiconductor layers, the semiconductor device being obtained by

forming grooves to be used as boundaries between individual substrates by irradiating the substrate along partitioning locations with laser light,

partitioning the substrate into individual substrates along the boundaries where the grooves are formed,

immersing the substrate into an acid solution before or after the foregoing partitioning so that deposits of gallium compounds adhering to the substrate are removed, and

electrically connecting an electrode of at least one selected from the substrate and the semiconductor layers with an another electrode.

24. The semiconductor device according to claim 23, wherein locations irradiated with laser light have grooves formed by irradiation on the side opposite the side on which the semiconductor layers are formed

25. The semiconductor device according to claim 23, wherein the grooves are formed by performing irradiation with laser light in an oblique direction so as to form quasi V-shaped cross-sections.

26. The semiconductor device according to claim 23, wherein locations irradiated with laser light have grooves formed by irradiation on the side on which the semiconductor layers are formed

27. The semiconductor device according to claim 23, wherein the acid solution is a solution whose main ingredient is hydrochloric acid or nitric acid.

28. The semiconductor device according to claim 23, wherein the semiconductor device is a light-emitting element.

29. The semiconductor device according to claim 23, wherein the grooves extend to not less than 30% of the thickness of the substrate.

30. The semiconductor device according to claim 28, wherein the light-emitting element has an n-type semiconductor layer and a p-type semiconductor layer formed on top of the substrate.

31. The semiconductor device according to claim 30, wherein a Pt layer and, on top of it, a rhodium layer, are formed in the p-type semiconductor layer region in order to establish an ohmic contact with the p-type semiconductor layer, thereby producing a dual layer structure acting as a reflective film, with a p-type electrode composed of gold formed thereon.

32. The semiconductor device according to claim 30, wherein a Ti layer and, on top of it, a Au layer, are formed in the n-type semiconductor layer region in order to establish an ohmic contact with the n-type semiconductor layer, thereby producing a dual layer structure acting as an n-type electrode.