Field Effect Transistor with Trench Filled with Insulating Material and Strips of Semi-insulating Material Along Trench Sidewalls
First Claim
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1. A MOSFET comprising:
- a first semiconductor region having a first surface;
a first insulation-filled trench region extending from the first surface into the first semiconductor region; and
strips of semi-insulating material along the sidewalls of the first insulation-filled trench region, the strips of semi-insulating material being insulated from the first semiconductor region.
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Abstract
A MOSFET comprises a first semiconductor region having a first surface, a first insulation-filled trench region extending from the first surface into the first semiconductor region, and strips of semi-insulating material along the sidewalls of the first insulation-filled trench region. The strips of semi-insulating material are insulated from the first semiconductor region.
51 Citations
14 Claims
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1. A MOSFET comprising:
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a first semiconductor region having a first surface;
a first insulation-filled trench region extending from the first surface into the first semiconductor region; and
strips of semi-insulating material along the sidewalls of the first insulation-filled trench region, the strips of semi-insulating material being insulated from the first semiconductor region. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14)
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Specification