Thermally distributed integrated power amplifier module
First Claim
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1. An integrated power amplifier (PA) module formed on a substrate, comprising:
- a first cluster of transistor cells and a first electrical circuit positioned in a first portion of the substrate;
a second cluster of transistor cells and a second electrical circuit positioned in a second portion of the substrate and spaced apart from the first portion; and
a combiner coupled to the first and second clusters to combine the output of the first and second clusters.
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Abstract
An integrated power amplifier (PA) module formed on a substrate includes a first cluster of transistor cells positioned in a first portion of the substrate; a second cluster of transistor cells positioned in a second portion of the substrate and spaced apart from the first portion; and a combiner coupled to the first and second clusters to combine the output of the first and second clusters.
97 Citations
21 Claims
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1. An integrated power amplifier (PA) module formed on a substrate, comprising:
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a first cluster of transistor cells and a first electrical circuit positioned in a first portion of the substrate; a second cluster of transistor cells and a second electrical circuit positioned in a second portion of the substrate and spaced apart from the first portion; and a combiner coupled to the first and second clusters to combine the output of the first and second clusters. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20)
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21. A method for providing radio frequency power amplification, comprising:
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positioning a first power amplifier in a first portion of the substrate; positioning a second power amplifier positioned in a second portion of the substrate spaced apart from the first portion; and combining the outputs of the first and second power amplifiers.
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Specification