Method for fabricating single-crystal GaN based substrate

• US 20080017100A1
• Filed: 09/25/2006
• Published: 01/24/2008
• Est. Priority Date: 07/20/2006
• Status: Abandoned Application

• Current Assignee: National Central University
• Original Assignee: National Central University
• Inventors: Chyi, Jen-Inn, Chen, Guan-Ting
• Application Number:
  US11/526,067
• Publication Number:
  US 20080017100A1
• Time in Patent Office: Days
• US Class Current: 117/104
• CPC Class Codes: C30B 23/02 Epitaxial-layer growth
• CPC Class Codes: C30B 25/02 Epitaxial-layer growth
• CPC Class Codes: C30B 29/16 Oxides
• CPC Class Codes: C30B 29/403 AIII-nitrides
• CPC Class Codes: C30B 29/406 Gallium nitride
• CPC Class Codes: C30B 29/605 Products containing multiple oriented crystallites, e.g. columnar crystallites

Abstract

A GaN based substrate is obtained with a simple etching. The GaN based substrate is separate from another base substrate with the etching. The whole process is easy and costs low. The substrate is made of a material having a matching lattice length for a lattice structure so that the substrate has good characteristics. And the GaN based substrate has good heat dissipation so that the stability and life-time of GaN based devices on the GaN based substrate are enhanced even when they are constantly operated under a high power.

Claims

1. A method for fabricating single-crystal gallium nitride (GaN) based substrate, comprising steps of:

(a) obtaining a base substrate;

(b) growing oxide nanorods on said base substrate;

(c) growing a GaN based material on said oxide nanorods to obtain a structure having a GaN based substrate; and

(d) etching said oxide nanorods of said structure with an etching solution to separate said GaN based substrate from said base substrate.

2. The method according to claim 1,

wherein said base substrate in step (a) is made of a material selected from a group consisting of sapphire, MgO, ZnO, Si, quartz, SiC and GaAs.

3. The method according to claim 1,

wherein said oxide nanorods in step (b) are made of a material selected from a group consisting of ZnO, MgO, MgZnO, LiAlO₂, LiGaO₂, Li₂SiO₃, Li₂GeO₃, NaAlO₂, NaGaO₂, Na₂GeO₃, Na₂SiO₃, Li₃PO₄, Li₃AsO₄, Li₃VO₄, Li₂MgGeO₄, Li₂ZnGeO₄, Li₂CdGeO₄, Li₂MgSiO₄, Li₂ZnSiO₄, Li₂CdSiO₄, Na₂MgGeO₄, Na₂ZnGeO₄ and Na₂ZnSiO₄.

4. The method according to claim 3,

wherein an oxide component of said oxide nanorods is an oxide of an element selected from a group consisting of Be, B, N, Cr, Mn, Fe, Co, Ni, Cu, In and Sb.

5. The method according to claim 1,

wherein said oxide nanorods in step (b) are grown through a method selected from a group consisting of a molecular beam epitaxy, a metal-organic chemical vapor deposition and a hydride vapor phase epitaxy.

6. The method according to claim 1,

wherein said GaN based material in step (c) is selected from a group consisting of GaN, AlGaN, InGaN and AlGaInN

7. The method according to claim 1,

wherein said GaN based material in step (c) are grown through a method selected from a group consisting of a molecular beam epitaxy, a metal-organic chemical vapor deposition and a hydride vapor phase epitaxy.

8. The method according to claim 1,

wherein said etching solution in step (d) is a potassium hydroxide solution.

9. The method according to claim 1,

wherein said separation of said GaN based substrate from said base substrate in step (d) is done through applying a stress to break said oxide nanorods to separate said GaN based substrate from sa id base substrate.