STRUCTURE AND METHOD FOR IMPROVING SHIELDED GATE FIELD EFFECT TRANSISTORS
First Claim
Patent Images
1. A field effect transistor comprising:
- a trench extending into a drift region of the field effect transistor;
a shield electrode in a lower portion of the trench, wherein the shield electrode is insulated from the drift region by a shield dielectric;
a gate electrode in the trench over the shield electrode, wherein the gate electrode is insulated from the shield electrode by an inter-electrode dielectric;
a resistive element coupled to the shield electrode and to a source region in the field effective transistor.
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Abstract
A field effect transistor is disclosed. In one embodiment, the field effect transistor includes a trench extending into a drift region of the field effect transistor. A shield electrode in a lower portion of the trench is insulated from the drift region by a shield dielectric. A gate electrode in the trench over the shield electrode is insulated from the shield electrode by an inter-electrode dielectric. A source region is formed adjacent the trench. A resistive element is coupled to the shield electrode and to a source region in the field effective transistor.
78 Citations
25 Claims
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1. A field effect transistor comprising:
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a trench extending into a drift region of the field effect transistor;
a shield electrode in a lower portion of the trench, wherein the shield electrode is insulated from the drift region by a shield dielectric;
a gate electrode in the trench over the shield electrode, wherein the gate electrode is insulated from the shield electrode by an inter-electrode dielectric;
a resistive element coupled to the shield electrode and to a source region in the field effective transistor. - View Dependent Claims (2, 3, 4, 5)
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6. A semiconductor device comprising:
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a drift region of a first conductivity type;
a well region extending above the drift region and having a second conductivity type opposite the first conductivity type;
a trench extending through the well region and into the drift region, the trench having its sidewalls and bottom lined with dielectric material, and substantially filled with a shield conductive layer and a gate conductive layer above the shield conductive layer, the shield conductive layer being separated from the gate conductive layer by an inter-electrode dielectric material;
source regions having the first conductivity type formed in the well region adjacent to the trench; and
a resistive element electrically coupled to the shield conductive layer and to the source regions. - View Dependent Claims (7, 8, 9, 10, 11, 12, 13, 14, 15, 16)
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17. A field effect transistor comprising:
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a trench extending into a drift region;
a shield electrode in a lower portion of the trench, wherein the shield electrode is insulated from the drift region by a shield dielectric;
a gate electrode in the trench over the shield electrode, wherein the gate electrode is insulated from the shield electrode by an inter-electrode dielectric;
wherein a potential is induced in the shield electrode during a switching event.
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18. A field effect transistor comprising:
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a trench extending into the drift region;
a shield electrode in a lower portion of the trench, wherein the shield electrode is insulated from the drift region by a shield dielectric;
a gate electrode in the trench over the shield electrode, wherein the gate electrode is insulated from the shield electrode by an inter-electrode dielectric;
wherein a voltage that changes with time is induced in the shield electrode during a switching event.
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19. A field effect transistor comprising:
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a drift region, wherein a transient potential is produced in the drift region;
a trench extending into the drift region;
a shield electrode in a lower portion of the trench, wherein the shield electrode is insulated from the drift region by a shield dielectric;
a gate electrode in the trench over the shield electrode, wherein the gate electrode is insulated from the shield electrode by an inter-electrode dielectric;
wherein a transient potential is induced in the shield electrode that follows the transient potential in the drift region.
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20. A field effect transistor comprising:
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a trench extending into the drift region, wherein a potential is produced in the drift region;
a shield electrode in a lower portion of the trench, wherein the shield electrode is insulated from the drift region by a shield dielectric;
a gate electrode in the trench over the shield electrode, wherein the gate electrode is insulated from the shield electrode by an inter-electrode dielectric;
wherein the potential in the drift region creates a charge in the shield electrode, and a potential is induced in the shield electrode in dynamic response to the charge.
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21. A method of forming a field effect transistor comprising:
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forming a trench in a drift region;
forming a shield electrode in a lower portion of the trench, the shield electrode being insulated from the drift region by a shield dielectric;
forming a gate electrode in the trench over the shield electrode, the gate electrode being insulated from the shield electrode by an inter-electrode dielectric;
forming a source region adjacent the trench; and
forming a resistive element coupled to the shield electrode and to the source region. - View Dependent Claims (22, 23, 24, 25)
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Specification