DUAL WORK FUNCTION METAL GATE STRUCTURE AND RELATED METHOD OF MANUFACTURE
First Claim
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1. A semiconductor device, comprising at least one of:
- a NMOS metal gate structure comprising a first metal gate electrode formed from a metal layer doped with fluorine to have a first work function; and
, a PMOS metal gate structure comprising a second metal gate electrode formed from the metal layer doped with carbon to have a second work function.
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Abstract
A semiconductor device and related methods of manufacture are disclosed in which dual work function metal gate electrodes are formed from a single metal layer by doping the metal layer with carbon and/or fluorine.
43 Citations
22 Claims
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1. A semiconductor device, comprising at least one of:
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a NMOS metal gate structure comprising a first metal gate electrode formed from a metal layer doped with fluorine to have a first work function; and
,a PMOS metal gate structure comprising a second metal gate electrode formed from the metal layer doped with carbon to have a second work function. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. The semiconductor device, comprising:
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NMOS and PMOS active regions formed in a substrate;
a gate insulating layer formed on the substrate over the NMOS and PMOS active regions;
a NMOS metal gate structure formed on the gate insulating layer over the NMOS active region and comprising a first metal gate electrode formed from a metal layer and doped with fluorine to have a first work function; and
,a PMOS metal gate structure formed on the gate insulating layer over the PMOS active region and comprising a second metal gate electrode formed from the metal layer and having a second work function greater than the first work function. - View Dependent Claims (10, 11, 12, 13, 14, 15, 16)
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17. The semiconductor device, comprising:
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NMOS and PMOS active regions formed in a substrate;
a gate insulating layer formed on the substrate over the NMOS and PMOS active regions;
a PMOS metal gate structure formed on the gate insulating layer over the PMOS active region and comprising a first metal gate electrode formed from a metal layer and doped with carbon to have a first work function; and
,a NMOS metal gate structure formed on the gate insulating layer over the NMOS active region and comprising a second metal gate electrode formed from the metal layer and having a second work function less than the first work function. - View Dependent Claims (18, 19, 20, 21, 22)
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Specification