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Structures of high-voltage MOS devices with improved electrical performance

  • US 20080017948A1
  • Filed: 10/26/2006
  • Published: 01/24/2008
  • Est. Priority Date: 07/21/2006
  • Status: Active Grant
First Claim
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1. A semiconductor structure comprising:

  • a substrate;

    a first high-voltage well (HVW) region of a first conductivity type overlying the substrate;

    a second HVW region of a second conductivity type opposite the first conductivity type overlying the substrate and laterally adjoining the first HVW region;

    a third HVW region of the second conductivity type underlying the second HVW region, wherein a region underlying the first HVW region is substantially free from the third HVW region, and wherein the third HVW region has a bottom substantially lower than a bottom of the first HVW region;

    an insulation region in a portion of the first HVW regions and extending from a top surface of the first HVW region into the first HVW region;

    a gate dielectric extending from over the first HVW region to over the second HVW region, wherein the gate dielectric has a portion over the insulation region; and

    a gate electrode on the gate dielectric.

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