High Flow GaCl3 Delivery

• US 20080018004A1
• Filed: 05/31/2007
• Published: 01/24/2008
• Est. Priority Date: 06/09/2006
• Status: Abandoned Application

• Current Assignee: Versum Materials US Inc.
• Original Assignee: Air Products and Chemicals Incorporated (Linde Plc)
• Inventors: Clark, Robert, Steidl, Thomas, Senecal, Lee, Birtcher, Charles
• Application Number:
  US11/756,091
• Publication Number:
  US 20080018004A1
• Time in Patent Office: Days
• US Class Current: 261/126
• CPC Class Codes: C23C 16/4402 Reduction of impurities in the source gas
• CPC Class Codes: C23C 16/4482 by bubbling of carrier gas through liquid source material
• CPC Class Codes: C30B 25/14 Feed and outlet means for the gases; Modifying the flow of the reactive gases
• CPC Class Codes: C30B 29/406 Gallium nitride
• CPC Class Codes: C30B 29/42 Gallium arsenide

Abstract

The present invention is an apparatus for deliverying high purity gallium trichloride in the vapor phase to a gallium nitride reactor, comprising; a source of carrier gas at an elevated pressure; a purifier to remove moisture from the carrier gas; a heater capable of heating the carrier gas to at least 80° C.; a container having a supply of gallium trichloride, a valve controlled inlet for the carrier gas having a dip tube with an outlet below the level of the gallium trichloride, a valve controlled outlet for removing the carrier gas and entrained gallium trichloride; a heater capable of heating sufficient to melt the gallium trichloride; a delivery line connected to the valve controlled outlet for carrying the entrained gallium trichloride to a reaction zone for gallium nitride. A process is also described for the apparatus.

Claims

1. An apparatus for deliverying high purity gallium trichloride in the vapor phase to a reactor for producing gallium-containing products, comprising;

a source of an inert carrier gas at a pressure elevated above atmospheric pressure;

a heater capable of heating the carrier gas to a temperature of at least 80°

C.;

a container having a corrosive resistant inner surface having a supply of gallium trichloride, a valve controlled inlet for the carrier gas that forms a dip tube with an outlet below the level of the gallium trichloride, a valve controlled outlet for removing the carrier gas and gallium trichloride entrained in the carrier gas;

a heater capable of heating the container sufficient to melt the gallium trichloride;

a delivery line connected to the valve controlled outlet for carrying the carrier gas and entrained gallium trichloride to a reaction zone for converting the gallium trichloride to gallium-containing products.

2. The apparatus of claim 1 including a purifier capable of removing moisture from the carrier gas down to no more than 10 parts per billion.

3. The apparatus of claim 1 wherein the heater capable of heating the carrier gas and the heater capable of heating the container are one heater.

4. The apparatus of claim 1 wherein the source of carrier gas includes a mass flow controller.

5. The apparatus of claim 2 wherein the source of carrier gas has a filter downstream of the purifier.

6. The apparatus of claim 1 wherein the container is in an insulated outer shell.

7. The apparatus of claim 1 wherein the source of carrier gas includes a carrier gas line that is configured with sinusoidal bends to provide sufficient heat exchange surface to heat the carrier gas proximate the heater capable of heating the carrier gas.

8. The apparatus of claim 1 wherein the delivery line is a coaxial line with an inner line conveying the carrier gas and entrained gallium trichloride and an outer coaxial line providing an annular space containing a heating medium.

9. The apparatus of claim 1 wherein the container is constructed of a metal selected from the group consisting of:

stainless steel, Hastelloy, Hastelloy B-2, Hastelloy B-3, Hastelloy C-22, Nickel, Monel, Inconel 686 and mixtures thereof.

10. The apparatus of claim 1 wherein the delivery line is constructed of a metal selected from the group consisting of:

stainless steel, Hastelloy, Hastelloy B-2, Hastelloy B-3, Hastelloy C-22, Nickel, Monel, Inconel 686 and mixtures thereof.

11. The apparatus of claim 1 wherein the valved inlet, the valved outlet and the valves in such inlet and outlet are constructed of a metal selected from the group consisting of:

stainless steel, Hastelloy, Hastelloy B-2, Hastelloy B-3, Hastelloy C-22, Nickel, Monel, Inconel 686 and mixtures thereof.

12. The apparatus of claim 11 wherein the valves have fluoropolymer seats.

13. The apparatus of claim 1 wherein the container has an inner liner of fluoropolymer.

14. The apparatus of claim 1 wherein the container and the delivery line have inner surfaces that contact the gallium trichloride and those surfaces have a passivating layer of metal chloride.

15. The apparatus of claim 11 wherein the valved inlet, valved outlet and the valves in such inlet and outlet have inner surfaces that contact the gallium trichloride and those surfaces have a passivating layer of metal chloride.

16. The apparatus of claim 1 wherein the container and the delivery line have inner surfaces that contact the gallium trichloride and those surfaces have a passivating layer of a silicon-containing compound.

17. The apparatus of claim 11 wherein the valved inlet, valved outlet and the valves in such inlet and outlet have inner surfaces that contact the gallium trichloride and those surfaces have a passivating layer of silicon-containing compound.

18. A process for deliverying vapor phase gallium trichloride to a reaction zone for synthesizing gallium-containing products, comprising;

providing a carrier gas selected from the group consisting of;

hydrogen, nitrogen, helium, argon and mixtures thereof at a pressure above atmospheric pressure;

heating the carrier gas to a temperature of at least 80°

C.;

injecting the carrier gas into a bath of melted gallium trichloride in a container to entrain the gallium trichloride in the carrier gas;

removing the carrier gas and entrained gallium trichloride from the container and delivering the carrier gas and entrained gallium trichloride through a delivery line at a temperature of at least 80°

C. to a reaction zone for synthesizing gallium-containing products.

19. The process of claim 18 including the step of purifying the carrier gas by passing the carrier gas through a purifying media selective for the removal of moisture to no more than 10 parts per billion;

20. The process of claim 18 wherein the carrier gas is flowed at a rate of 5 to 15 liters per minute.

21. The process of claim 18 wherein the gallium trichloride is delivered to the reaction zone at a rate of 300 to 400 grams per hour.

22. The process of claim 18 wherein the gallium trichloride in the container is heated to a temperature in the range of 110°

C. to 140°

C.

23. The process of claim 18 wherein the container and the delivery line have inner surfaces that contact the gallium trichloride and those surfaces are passivated by flowing a chlorinated gas through the container and the delivery line prior to deliverying the entrained gallium trichloride.