ELECTRONIC DEVICE AND ELECTRONIC APPARATUS

• US 20080018566A1
• Filed: 09/24/2007
• Published: 01/24/2008
• Est. Priority Date: 04/27/1999
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: FUKUNAGA, Takeshi, YAMAUCHI, Yukio
• Granted Patent: US 7,843,407 B2
• Time in Patent Office: Days
• US Class Current: 345/76
• CPC Class Codes: G09G 2300/0426 Layout of electrodes and connections
• CPC Class Codes: G09G 2300/0842 forming a memory circuit, e.g. a dynamic memory with one capacitor
• CPC Class Codes: G09G 2300/0861 with additional control of the display period without amending the charge stored in a pixel memory, e.g. by means of additional select electrodes
• CPC Class Codes: H01L 27/12 the substrate being other than a semiconductor body, e.g. an insulating body
• CPC Class Codes: H01L 27/1214 comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
• CPC Class Codes: H01L 27/124 with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits wiring structures per se H01L23/52
• CPC Class Codes: H01L 27/1251 comprising TFTs having a different architecture, e.g. top- and bottom gate TFTs
• CPC Class Codes: H01L 27/1255 integrated with passive devices, e.g. auxiliary capacitors
• CPC Class Codes: H01L 27/13 combined with thin-film or thick-film passive components
• CPC Class Codes: H01L 29/66757 Lateral single gate single channel transistors with non-inverted structure, i.e. the channel layer is formed before the gate
• CPC Class Codes: H01L 29/78621 with LDD structure or an extension or an offset region or characterised by the doping profile
• CPC Class Codes: H01L 29/78627 with a significant overlap between the lightly doped drain and the gate electrode, e.g. GOLDD
• CPC Class Codes: H10K 2102/3026 Top emission
• CPC Class Codes: H10K 59/12 Active-matrix OLED [AMOLED] displays
• CPC Class Codes: H10K 59/1213 the pixel elements being TFTs
• CPC Class Codes: H10K 59/1216 the pixel elements being capacitors
• CPC Class Codes: H10K 59/131 Interconnections, e.g. wiring lines or terminals
• CPC Class Codes: H10K 59/38 comprising colour filters or colour changing media [CCM]

Abstract

An EL display having high operating performance and reliability is provided. LDD regions 15a through 15d of a switching TFT 201 formed in a pixel are formed such that they do not overlap gate electrodes 19a and 19b to provide a structure which is primarily intended for the reduction of an off-current. An LDD region 22 of a current control TFT 202 is formed such that it partially overlaps a gate electrode 35 to provide a structure which is primarily intended for the prevention of hot carrier injection and the reduction of an off-current. Appropriate TFT structures are thus provided depending on required functions to improve operational performance and reliability.

Claims

1. An EL display device comprising:

a first thin film transistor comprising;

at least two channel forming regions; and

an LDD (lightly-doped drain) region between the two channel forming regions wherein the LDD region partially overlaps a gate electrode of the first thin film transistor with a gate insulating film interposed therebetween;

a second thin film transistor electrically connected to the first thin film transistor, comprising;

a third channel region; and

an impurity region partially overlapping a gate electrode of the second thin film transistor with the gate insulating film interposed therebetween, and

an EL element electrically connected to the second thin film transistor.

2. The EL display device according to claim 1, wherein an active layer of the first thin film transistor is a monocrystalline semiconductor film.

3. The EL display device according to claim 1, wherein the impurity region is an LDD region.

4. The EL display device according to claim 1, wherein the EL display device is driven by using an analog signal.

5. The EL display device according to claim 1, wherein the EL display device is incorporated into a display, wherein the display is at least one selected from the group consisting of a personal computer, a display for receiving TV broadcasting and a display for displaying advertisements.

6. The EL display device according to claim 1, wherein a display incorporating the EL display device has a diagonal 20 to 60 inches.

7. An EL display device comprising:

a first thin film transistor comprising;

at least two channel forming regions; and

an LDD region between the two channel forming regions wherein the LDD region is formed in a region which does not overlap a gate electrode of the first thin film transistor;

a second thin film transistor electrically connected to the first thin film transistor, comprising;

a third channel region; and

an impurity region partially overlapping a gate electrode of the second thin film transistor with the gate insulating film interposed therebetween, and

an EL element electrically connected to the second thin film transistor.

8. The EL display device according to claim 7, wherein an active layer of the first thin film transistor is a monocrystalline semiconductor film.

9. The EL display device according to claim 7, wherein the impurity region is an LDD region.

10. The EL display device according to claim 7, wherein the EL display device is driven by using an analog signal.

11. The EL display device according to claim 7, wherein the EL display device is incorporated into a display, wherein the display is at least one selected from the group consisting of a personal computer, a display for receiving TV broadcasting and a display for displaying advertisements.

12. The EL display device according to claim 7, wherein a display incorporating the EL display device has a diagonal 20 to 60 inches.

13. An EL display device comprising:

a first thin film transistor comprising;

a first island-shaped semiconductor film;

a gate insulating film formed over the first island-shaped semiconductor film;

a first gate electrode formed over the first island-shaped semiconductor film with the gate insulating film interposed therebetween; and

a second gate electrode formed over the first island-shaped semiconductor film with the gate insulating film interposed therebetween;

a second thin film transistor electrically connected to the first thin film transistor, comprising;

a second island-shaped semiconductor film; and

a third gate electrode formed over the second island-shaped semiconductor film with the gate insulating film interposed therebetween; and

an EL element electrically connected to the second thin film transistor,

wherein the first island-shape semiconductor film comprises;

a first pair of LDD regions partially overlap the first gate electrode with the gate insulating film interposed therebetween;

a first channel forming region between the first pair of LDD regions and overlapping the first gate electrode with the gate insulating film interposed therebetween;

a second pair of LDD regions partially overlap the second gate electrode with the gate insulating film interposed therebetween; and

a second channel forming region between the second pair of LDD regions and overlapping the second gate electrode with the gate insulating film interposed therebetween, and

wherein the second island-shaped semiconductor film comprises;

a third channel forming region overlapping the third gate electrode with the gate insulating film interposed therebetween; and

an impurity region adjacent to the third channel forming region wherein the impurity region partially overlaps the third gate electrode with the gate insulating film interposed therebetween.

14. The EL display device according to claim 13, wherein an active layer of the first thin film transistor is a monocrystalline semiconductor film.

15. The EL display device according to claim 13, wherein the impurity region is an LDD region.

16. The EL display device according to claim 13, wherein the EL display device is driven by using an analog signal.

17. The EL display device according to claim 13, wherein the EL display device is incorporated into a display, wherein the display is at least one selected from the group consisting of a personal computer, a display for receiving TV broadcasting and a display for displaying advertisements.

18. The EL display device according to claim 13, wherein a display incorporating the EL display device has a diagonal 20 to 60 inches.

19. An EL display device comprising:

a first thin film transistor comprising;

a first island-shaped semiconductor film;

a gate insulating film formed over the first island-shaped semiconductor film;

a first gate electrode formed over the first island-shaped semiconductor film with the gate insulating film interposed therebetween; and

a second gate electrode formed over the first island-shaped semiconductor film with the gate insulating film interposed therebetween;

a second thin film transistor electrically connected to the first thin film transistor, comprising;

a second island-shaped semiconductor film; and

a third gate electrode formed over the second island-shaped semiconductor film with the gate insulating film interposed therebetween; and

an EL element electrically connected to the second thin film transistor,

wherein the first island-shaped semiconductor film comprises;

a first pair of LDD regions formed in a region which does not overlap with the first gate electrode;

a first channel forming region between the first pair of LDD regions and overlapping the first gate electrode with the gate insulating film interposed therebetween;

a second pair of LDD regions formed in a region which does not overlap the second gate electrode with the gate insulating film interposed therebetween, and

a second channel forming region between the second pair of LDD regions and overlapping the second gate electrode with the gate insulating film interposed therebetween, and

wherein the second island-shaped semiconductor film comprises;

a third channel forming region overlapping the third gate electrode with the gate insulating film interposed therebetween; and

an impurity region adjacent to the third channel forming region wherein the impurity region partially overlaps the third gate electrode with the gate insulating film interposed therebetween.

20. The EL display device according to claim 19, wherein an active layer of the first thin film transistor is a monocrystalline semiconductor film.

21. The EL display device according to claim 19, wherein the impurity region is an LDD region.

22. The EL display device according to claim 19, wherein the EL display device is driven by using an analog signal.

23. The EL display device according to claim 19, wherein the EL display device is incorporated into a display, wherein the display is at least one selected from the group consisting of a personal computer, a display for receiving TV broadcasting and a display for displaying advertisements.

24. The EL display device according to claim 19, wherein a display incorporating the EL display device has a diagonal 20 to 60 inches.