SEMICONDUCTOR DEVICE
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0 Petitions
Accused Products
Abstract
A logic circuit in a system LSI is provided with a power switch so as to cut off the switch at the time of standby, reducing leakage current. At the same time, an SRAM circuit of the system LSI controls a substrate bias to reduce leakage current.
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Citations
24 Claims
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1-15. -15. (canceled)
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16. A semiconductor device comprising:
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a first memory circuit including a plurality of first SRAM cells;
a second memory circuit including a plurality of second SRAM cells;
a first power line which supplies a first voltage to the first memory circuit and the second memory circuit; and
a first switch circuit coupled between the first memory circuit and the first power line;
wherein the second memory circuit is directly coupled to the first power line, and wherein while a power supply of the first voltage to the plurality of first SRAM cells is cut off by the first switch circuit, the plurality of second SRAM cells are supplied with the first voltage from the first power line. - View Dependent Claims (17, 18, 19, 20, 21, 22, 23, 24)
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Specification