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Surface emitting semiconductor device

  • US 20080019410A1
  • Filed: 07/19/2007
  • Published: 01/24/2008
  • Est. Priority Date: 07/20/2006
  • Status: Active Grant
First Claim
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1. A surface emitting semiconductor device comprising:

  • a semiconductor region including an active layer;

    a first distributed Bragg reflector including first layers and second layers, the first layers and second layers being alternately arranged, and the first layers being made of dielectric material; and

    a second distributed Bragg reflector, the first distributed Bragg reflector, the semiconductor region and the second distributed Bragg reflector being sequentially arranged along a predetermined axis;

    wherein a cross section of the first distributed Bragg reflector is taken along a reference plane perpendicular to the predetermined axis, a distance between two points on an edge of the cross section takes a first value in a direction of an X-axis of a two-dimensional XY orthogonal coordinate system defined on the reference plane, a distance between two points on the edge takes a second value in a direction of a Y-axis of the two-dimensional XY orthogonal coordinate system, the first value is different from the second value, a cross section of the second distributed Bragg reflector is taken along another reference plane perpendicular to the predetermined axis, and a shape of the cross section of the first distributed Bragg reflector is different from a shape of the cross section of the second distributed Bragg reflector.

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