Surface emitting semiconductor device
First Claim
1. A surface emitting semiconductor device comprising:
- a semiconductor region including an active layer;
a first distributed Bragg reflector including first layers and second layers, the first layers and second layers being alternately arranged, and the first layers being made of dielectric material; and
a second distributed Bragg reflector, the first distributed Bragg reflector, the semiconductor region and the second distributed Bragg reflector being sequentially arranged along a predetermined axis;
wherein a cross section of the first distributed Bragg reflector is taken along a reference plane perpendicular to the predetermined axis, a distance between two points on an edge of the cross section takes a first value in a direction of an X-axis of a two-dimensional XY orthogonal coordinate system defined on the reference plane, a distance between two points on the edge takes a second value in a direction of a Y-axis of the two-dimensional XY orthogonal coordinate system, the first value is different from the second value, a cross section of the second distributed Bragg reflector is taken along another reference plane perpendicular to the predetermined axis, and a shape of the cross section of the first distributed Bragg reflector is different from a shape of the cross section of the second distributed Bragg reflector.
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Accused Products
Abstract
A surface emitting semiconductor device comprises: a semiconductor region including an active layer; a first DBR having first layers and second layers; and a second DBR. The first and second layers are alternately arranged, and the first layers are made of dielectric material. The first DBR, semiconductor region and second DBR are sequentially arranged along a predetermined axis, and the semiconductor region is provided between the first DBR and the second DBR. The cross section of the first DBR is taken along a reference plane perpendicular to the predetermined axis. The distance between two points on an edge of the cross section takes a first value in a direction of an X-axis of a two-dimensional XY orthogonal coordinate system defined on the reference plane, and the distance between two points on the edge takes a second value in a direction of a Y-axis of the above coordinate system. The first value is different from the second value. The cross section of the second DBR is taken along another reference plane perpendicular to the predetermined axis, and a shape of the cross section of the first DBR is different from a shape of the cross section of the second DBR.
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Citations
20 Claims
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1. A surface emitting semiconductor device comprising:
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a semiconductor region including an active layer; a first distributed Bragg reflector including first layers and second layers, the first layers and second layers being alternately arranged, and the first layers being made of dielectric material; and a second distributed Bragg reflector, the first distributed Bragg reflector, the semiconductor region and the second distributed Bragg reflector being sequentially arranged along a predetermined axis; wherein a cross section of the first distributed Bragg reflector is taken along a reference plane perpendicular to the predetermined axis, a distance between two points on an edge of the cross section takes a first value in a direction of an X-axis of a two-dimensional XY orthogonal coordinate system defined on the reference plane, a distance between two points on the edge takes a second value in a direction of a Y-axis of the two-dimensional XY orthogonal coordinate system, the first value is different from the second value, a cross section of the second distributed Bragg reflector is taken along another reference plane perpendicular to the predetermined axis, and a shape of the cross section of the first distributed Bragg reflector is different from a shape of the cross section of the second distributed Bragg reflector. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18)
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19. A surface emitting semiconductor device comprising:
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a first distributed Bragg reflector having a plurality of dielectric layers; a second distributed Bragg reflector; and a semiconductor active layer provided between the first distributed Bragg reflector and the second distributed Bragg reflector, wherein a cross section of the first distributed Bragg reflector is taken along a reference plane perpendicular to the predetermined axis, a shape of the cross section of the first distributed Bragg reflector being asymmetrical cross-section geometry by reference to an optical axis of the surface emitting semiconductor device. - View Dependent Claims (20)
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Specification