Method of manufacturing semiconductor device and plasma processing apparatus
First Claim
1. A method of manufacturing a semiconductor device, the method comprising the steps of:
- preparing an object to be processed including a substrate, a low dielectric constant film formed on the substrate, having recesses, being made of a material containing silicon, carbon, oxygen, and hydrogen, and an organic film formed on the low dielectric constant film so as to be embedded in the recesses; and
etching the organic film of the object to be processed by plasma of a process gas containing carbon dioxide.
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Abstract
The method of manufacturing a semiconductor device according to the present invention includes a step of etching an organic film formed to be embedded in recesses in a low dielectric constant film which is made of a material containing silicon, carbon, oxygen, and hydrogen. The organic film is typically a sacrifice film formed on the low dielectric constant film to be embedded in recesses formed in the low dielectric constant for embedding electrodes therein. The etching is performed with plasma of a process gas containing carbon dioxide. With the method, the organic film can be etched while suppressing damage to the low dielectric constant film.
12 Citations
20 Claims
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1. A method of manufacturing a semiconductor device, the method comprising the steps of:
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preparing an object to be processed including a substrate, a low dielectric constant film formed on the substrate, having recesses, being made of a material containing silicon, carbon, oxygen, and hydrogen, and an organic film formed on the low dielectric constant film so as to be embedded in the recesses; and
etching the organic film of the object to be processed by plasma of a process gas containing carbon dioxide. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 19, 20)
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13. A plasma processing apparatus for etching a object to be processed including a substrate, a low dielectric constant film formed on the substrate, having recesses, being made of a material containing silicon, carbon, oxygen, and hydrogen, and an organic film formed on the low dielectric constant film so as to be embedded in the recesses, the plasma processing apparatus comprising:
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a processing chamber;
a lower electrode which is placed in the processing cahmber and on which the object to be processed is mounted;
an upper electrode facing the lower electrode;
a gas supply system for supplying a process gas containing cabon dioxide, the process gas being used to etch an organic film of the object to be processed; and
a high-frequency power supply for applying high-frequency power between the lower electrode and the upper electrode to convert the process gas into plasma. - View Dependent Claims (14, 15, 16, 17, 18)
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Specification