DEPOSITION BY ADSORPTION UNDER AN ELECTRICAL FIELD

• US 20080023436A1
• Filed: 07/25/2007
• Published: 01/31/2008
• Est. Priority Date: 07/27/2006
• Status: Abandoned Application

• Current Assignee: STMicroelectronics SA (STMicroelectronics NV)
• Original Assignee: STMicroelectronics SA (STMicroelectronics NV)
• Inventors: Bouvet, Philippe, Gros-Jean, Mickael
• Application Number:
  US11/782,796
• Publication Number:
  US 20080023436A1
• Time in Patent Office: Days
• US Class Current: 216/6
• CPC Class Codes: C23C 16/405 of refractory metals or yttrium
• CPC Class Codes: C23C 16/45525 Atomic layer deposition [ALD]
• CPC Class Codes: C23C 16/45536 Use of plasma, radiation or electromagnetic fields
• CPC Class Codes: C23C 16/45542 Plasma being used non-continuously during the ALD reactions

Abstract

A method for depositing a material by adsorption onto a substrate, includes a step of exposing the substrate to a precursor molecule in the gaseous phase. These precursor molecules present a non-zero dipole moment. An electrical field is applied during the substrate exposing step to cause a reactive branch of the precursor molecules to adsorb into the surface of the substrate in a manner such that the precursor molecules have essentially a same orientation. Next, the substrate is exposed to reagent molecules in the gaseous phase which react with the adsorbed precursor molecules so that organic branches of the adsorbed precursor molecules other than the reactive organic branch are replaced by elements of the reagent molecules. This process results in the formation of a monoatomic layer.

Claims

1. A method for depositing by adsorption a material onto a substrate, comprising:

exposing the substrate to a precursor in the gaseous phase, with the precursor molecules presenting a non-zero dipole moment, and

applying an electrical field during substrate exposing so as to adsorb precursor molecules onto the substrate.

2. The deposition method according to claim 1, wherein the electrical field is applied in a continuous or sequential manner essentially for the duration of substrate exposing.

3. The deposition method according to claim 1, further comprising exposing to reagent molecules in the gaseous phase in order to achieve a reaction with the adsorbed precursor molecules.

4. The deposition method according to claim 1, wherein the precursor molecules comprise TBTDET molecules.

5. The deposition method according to claim 1, wherein the surface of the substrate presents variations in contour.

6. The deposition method according to claim 5, wherein the precursor molecules comprise at least one inert branch.

7. The deposition method according to claim 1, wherein the surface of the substrate presents a trench, and wherein exposing to precursor molecules is performed under an electrical field such that the precursor molecules are selectively adsorbed onto the walls of the trench so as to deposit a first metallic layer, and further comprising:

depositing a second layer of a dielectric material,

depositing a third metallic layer,

performing a polishing operation to level the surface of the substrate or an etching operation to define a capacitor.

8. A method for depositing by adsorption a material onto a substrate, comprising:

exposing the substrate to precursor molecules in the gaseous phase, these precursor molecules presenting a dipole moment and each having an organic branch which is reactive and aligned with the dipole;

applying an electrical field oriented perpendicular to a surface of the substrate to which the precursor molecules are adsorbed through contact with the reactive organic branches.

9. The method of claim 8 further comprising exposing the substrate to reagent molecules in the gaseous phase which react with the adsorbed precursor molecules.

10. The method of claim 9 wherein organic branches of the adsorbed precursor molecules other than the reactive organic branch are replaced by elements of the reagent molecules.

11. The method of claim 9 wherein each cycle of exposing, applying and exposing forms a monoatomic layer of adsorbed molecules having essentially a same orientation.

12. The method of claim 8, wherein the precursor molecules comprise TBTDET molecules and the reagent molecules comprise dioxygen to form a monoatomic layer of Ta₂O₅.

13. The method according to claim 8, wherein the surface of the substrate presents variations in contour.

14. The method according to claim 13, wherein the variation in contour is a formed by a trench having opposed vertical walls and a floor, and wherein applying an electrical field comprises applying that field oriented perpendicular to the opposed vertical walls.

15. The method according to claim 13, wherein the precursor molecules comprise at least one inert branch.

16. A method, comprising:

forming a trench in a substrate, the trench having opposed vertical walls and a floor;

exposing the substrate to precursor molecules in the gaseous phase, these precursor molecules presenting a dipole moment and each having an organic branch which is reactive and aligned with the dipole;

applying a electrical field oriented perpendicular to the vertical walls of the trench so that the precursor molecules are adsorbed to the vertical walls through contact with the reactive organic branches.

17. The method of claim 16 further comprising exposing the substrate to reagent molecules in the gaseous phase which react with the adsorbed precursor molecules so that organic branches of the adsorbed precursor molecules other than the reactive organic branch are replaced by elements of the reagent molecules to form a first metal layer of a capacitor.

18. The method of claim 17 wherein the adsorbed precursor molecules on the vertical walls form at least one monoatomic layer of adsorbed molecules having essentially a same orientation.

19. The method of claim 17 further comprising depositing an insulating layer over the first metal layer in the trench and the floor of the trench.

20. The method of claim 19 further comprising depositing a second metal layer in the trench over the insulating layer, the first and second metal layers forming electrodes of a capacitor.