STACKED RF POWER AMPLIFIER
First Claim
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1. An RF power amplifier comprising:
- an integrated circuit;
a first power amplifier formed on the integrated circuit, the first power amplifier having a first switching device;
a second power amplifier formed on the integrated circuit, the second power amplifier having a second switching device, wherein the first and second power amplifiers are connected in a stacked arrangement between a voltage supply and ground; and
wherein the first and second switching devices are electrically isolated from each other.
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Abstract
A method and apparatus provides techniques for electrically isolating switching devices in a stacked RF power amplifier, which prevents the switching devices from being subjected to high breakdown voltages. The isolation provided allows the power amplifier to be implemented on an integrated circuit.
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Citations
21 Claims
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1. An RF power amplifier comprising:
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an integrated circuit;
a first power amplifier formed on the integrated circuit, the first power amplifier having a first switching device;
a second power amplifier formed on the integrated circuit, the second power amplifier having a second switching device, wherein the first and second power amplifiers are connected in a stacked arrangement between a voltage supply and ground; and
wherein the first and second switching devices are electrically isolated from each other. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. A method of making a stacked RF power amplifier comprising:
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providing a CMOS integrated circuit;
forming first and second stacked power amplifiers on the CMOS integrated circuit, wherein the first and second stacked power amplifiers each include at least one switching device; and
electrically isolating a switching device of the first power amplifier with a switching device of the second power amplifier. - View Dependent Claims (10, 11, 12, 13, 14)
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15. A stacked RF power amplifier comprising:
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an integrated circuit;
first and second stacked power amplifiers, wherein each power amplifier includes at least one switching device having a substrate; and
wherein the body of a switching device in the first power amplifier is electrically isolated from the body of a switching device in the second power amplifier. - View Dependent Claims (16, 17, 18, 19, 20)
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21-25. -25. (canceled)
Specification