METHODS AND SYSTEMS FOR SELECTIVELY DEPOSITING SI-CONTAINING FILMS USING CHLOROPOLYSILANES

• US 20080026149A1
• Filed: 05/24/2007
• Published: 01/31/2008
• Est. Priority Date: 05/31/2006
• Status: Abandoned Application

• Current Assignee: ASM America Incorporated (ASM International NV)
• Original Assignee: ASM America Incorporated (ASM International NV)
• Inventors: Stephens, Matthew, Wen, Jianqing, Arena, Chantal, Bauer, Matthias, Bertram, Ronald, Tomasini, Pierre, Cody, Nyles
• Application Number:
  US11/753,370
• Publication Number:
  US 20080026149A1
• Time in Patent Office: Days
• US Class Current: 427/255.28
• CPC Class Codes: C23C 16/04 Coating on selected surface areas, e.g. using masks
• CPC Class Codes: C23C 16/24 Deposition of silicon only
• CPC Class Codes: C30B 25/02 Epitaxial-layer growth
• CPC Class Codes: C30B 25/18 characterised by the substrate
• CPC Class Codes: C30B 29/06 Silicon
• CPC Class Codes: H01L 21/02381 Silicon, silicon germanium, germanium
• CPC Class Codes: H01L 21/02529 Silicon carbide
• CPC Class Codes: H01L 21/02532 Silicon, silicon germanium, germanium
• CPC Class Codes: H01L 21/02576 N-type
• CPC Class Codes: H01L 21/02579 P-type
• CPC Class Codes: H01L 21/0262 Reduction or decomposition of gaseous compounds, e.g. CVD
• CPC Class Codes: H01L 21/02639 Preparation of substrate for selective deposition
• CPC Class Codes: H01L 21/28518 the conductive layers comprising silicides H01L21/28537 takes precedence

Abstract

Chloropolysilanes are utilized in methods and systems for selectively depositing thin films useful for the fabrication of various devices such as microelectronic and/or microelectromechanical systems (MEMS).

Claims

1. A method of selectively depositing a Si-containing film, comprising:

establishing a selective chemical vapor deposition (CVD) condition in a CVD chamber, wherein establishing the selective CVD condition comprises flowing a chloropolysilane from a container to the CVD chamber and flowing a chlorine gas to the CVD chamber, the chloropolysilane comprising at least one of monochlorodisilane, dichlorodisilane, trichlorodisilane, and tetrachlorodisilane; and

selectively depositing a Si-containing film onto a single crystal surface region of a substrate disposed within the CVD chamber under the selective CVD condition while minimizing deposition onto a non-single crystalline surface region of the substrate during the selective deposition.

2. The method of claim 1, wherein establishing the selective CVD condition comprises minimizing flowing hydrogen to the CVD chamber.

3. The method of claim 1, wherein establishing the selective CVD condition comprises minimizing flowing hydrogen chloride to the CVD chamber.

4. The method of claim 1, wherein the tetrachlorodisilane is 1,1,1,2-tetrachlorodisilane.

5. The method of claim 1, wherein the trichlorodisilane is 1,1,1,-trichlorodisilane.

6. The method of claim 1, wherein establishing the selective CVD condition comprises flowing the chloropolysilane to the CVD chamber at a flow rate that is effective to selectively deposit the Si-containing film onto the substrate at a deposition rate of at least about 140 Å

per minute.

7. The method of claim 1, wherein establishing the selective CVD condition comprises heating the chloropolysilane in the CVD chamber under decomposition conditions selected to form reactive intermediates comprising at least two of :

SiHCl, ;

SiH₂ and ;

SiCl₂.

8. The method of claim 1, wherein the selective CVD condition comprises a substrate temperature in the range of about 400°

C. to about 580°

C.

9. The method of claim 1, wherein the selective CVD condition comprises a CVD chamber pressure in the range of about 20 Torr to about 760 Torr.

10. The method of claim 1, wherein minimizing deposition onto the non-single crystalline surface region comprises depositing substantially no Si-containing material onto the non-single crystalline surface region during the selective deposition.

11. The method of claim 1, wherein the selective CVD condition comprises a substrate temperature that is effective to epitaxially or heteroepitaxially deposit the Si-containing film onto the single crystal surface region of the substrate.

12. The method of claim 11, wherein establishing the selective CVD condition comprises flowing a carbon source to the CVD chamber.

13. The method of claim 12, wherein the carbon source is selected from monosilylmethane, disilylmethane, trisilylmethane, tetrasilylmethane, monomethyl silane, dimethyl silane, and 1,3-disilabutane.

14. The method of claim 12, wherein the selective CVD condition further comprises a deposition temperature and a carbon source flow rate that are effective to incorporate from about 1.0 atomic % to about 3.5 atomic % of substitutional carbon into the selectively deposited Si-containing film.

15. The method of claim 1, wherein establishing the selective CVD condition comprises flowing at least one second chloropolysilane to the CVD chamber, the second chloropolysilane being different from said chloropolysilane.

16. The method of claim 15, comprising flowing said chloropolysilane and the second chloropolysilane from the container.

17. The method of claim 16, wherein said chloropolysilane and the second chloropolysilane are present in the container at a weight ratio in the range of about 1:

9 to about 9;

1.

18. The method of claim 15, wherein the second chloropolysilane comprises at least one selected from monochlorodisilane, dichlorodisilane, trichlorodisilane, tetrachlorodisilane, pentachlorodisilane, hexachlorodisilane, chlorotrisilane, dichlorotrisilane, trichlorotrisilane, tetrachlorotrisilane, pentachlorotrisilane, hexachlorotrisilane, heptachlorotrisilane, and octachlorotrisilane.

19. The method of claim 18, wherein said chloropolysilane comprises dichlorodisilane and the second chloropolysilane comprises trichlorodisilane.

20. The method of claim 15, comprising flowing a third chloropolysilane to the CVD chamber, the third chloropolysilane being different from the second chloropolysilane and different from said chloropolysilane.

21. The method of claim 1, wherein establishing the selective CVD condition comprises flowing a silicon source to the CVD chamber, the silicon source comprising at least one of disilane and trisilane.

22. The method of claim 1, wherein the CVD chamber is included in a horizontal flow, single wafer reactor.

23. The method of claim 1, wherein the substrate comprises an integrated circuit.

24. The method of claim 1, wherein establishing the selective CVD condition comprises flowing a germanium precursor to the CVD chamber.

25. The method of claim 24, wherein the germanium precursor comprises at least one of germane, monochlorogermane, dichlorogermane, trichlorogermane, tetrachlorogermane, digermane, chlorodigermane, dichlorodigermane, trichlorodigermane, tetrachlorodigermane, pentachlorodigermane, and hexachlorodigermane.

26. The method of claim 1, wherein establishing the selective CVD condition comprises flowing an electrically active dopant precursor to the CVD chamber under the chemical vapor deposition conditions.

27. The method of claim 26, wherein the electrically active dopant precursor comprises at least one of boron, phosphorous, arsenic, indium and antimony.

28. The method of claim 1, wherein the selectively deposited Si-containing film is strained.

29. The method of claim 28, wherein the selectively deposited Si-containing film is compressively strained.

30. The method of claim 28, wherein the selectively deposited Si-containing film is tensile strained.

31. A deposition system, comprising:

a chemical vapor deposition (CVD) chamber configured to hold a substrate therein;

a chloropolysilane, wherein the chloropolysilane comprises at least one of monochlorodisilane, dichlorodisilane, trichlorodisilane, and tetrachlorodisilane;

a chlorine gas;

a first container holding the chloropolysilane, the first container being operatively connected to supply the chloropolysilane to the CVD chamber under a selective CVD condition; and

a second container holding the chlorine gas, the second container being operatively connected to supply the chlorine gas to the CVD chamber under the selective CVD condition.

32. The deposition system of claim 31, wherein the tetrachlorodisilane is 1,1,1,2-tetrachlorodisilane.

33. The deposition system of claim 31, wherein the trichlorodisilane is 1,1,1,-trichlorodisilane.

34. The deposition system of claim 31, wherein the chloropolysilane comprises at least two selected from monochlorodisilane, dichlorodisilane, trichlorodisilane, tetrachlorodisilane, pentachlorodisilane, hexachlorodisilane, chlorotrisilane, dichlorotrisilane, trichlorotrisilane, tetrachlorotrisilane, pentachlorotrisilane, hexachlorotrisilane, heptachlorotrisilane, and octachlorotrisilane.

35. The deposition system of claim 34, wherein the chloropolysilane comprises at least three selected from monochlorodisilane, dichlorodisilane, trichlorodisilane, tetrachlorodisilane, pentachlorodisilane, hexachlorodisilane, chlorotrisilane, dichlorotrisilane, trichlorotrisilane, tetrachlorotrisilane, pentachlorotrisilane, hexachlorotrisilane, heptachlorotrisilane, and octachlorotrisilane.

36. The deposition system of claim 34, wherein the chloropolysilane comprises dichlorodisilane and trichlorodisilane.

37. The deposition system of claim 36, wherein the dichlorodisilane and the trichlorodisilane are present in the chloropolysilane at a weight ratio in the range of about 1:

9 to about 9;

1.

38. The deposition system of claim 31, further comprising a carrier gas source operatively connected to the CVD chamber and configured to supply a non-hydrogen carrier gas to the CVD chamber.

39. The deposition system of claim 38 that is not configured to supply hydrogen gas to the CVD chamber.

40. The deposition system of claim 31 that is not configured to supply hydrogen chloride gas to the CVD chamber.

41. The deposition system of claim 31, wherein the CVD chamber is included in a horizontal flow, single wafer reactor.

42. The deposition system of claim 31, further comprising a computer operatively connected to the first container and the second container, and configured to control the flow of the chloropolysilane and the chlorine to the CVD chamber.

43. The deposition system of claim 42, further comprising a heater configured to heat the substrate, the computer being operatively connected to the heater and configured to control the temperature of the substrate.

44. The deposition system of claim 42, wherein the computer is configured to establish a selective CVD condition in the CVD chamber.