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Photomask manufacturing method and semiconductor device manufacturing method

  • US 20080026300A1
  • Filed: 07/25/2007
  • Published: 01/31/2008
  • Est. Priority Date: 07/25/2006
  • Status: Active Grant
First Claim
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1. A photomask manufacturing method comprising:

  • preparing a photomask in which a mask pattern is formed on a transparent substrate;

    generating a pattern dimensional map by measuring a mask in-plane distribution of pattern dimensions;

    generating a transmittance correction coefficient map by dividing a formation region of the pattern into a plurality of subregions and determining a transmittance correction coefficient for each subregion in accordance with a size of a pattern of said each subregion;

    calculating a transmittance correction value of said each subregion on the basis of the pattern dimensional map and the transmittance correction coefficient map; and

    changing a transmittance of the transparent substrate corresponding to said each subregion on the basis of the transmittance correction value.

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