GROWTH OF NON-POLAR M-PLANE III-NITRIDE FILM USING METALORGANIC CHEMICAL VAPOR DEPOSITION (MOCVD)

• US 20080026502A1
• Filed: 10/10/2007
• Published: 01/31/2008
• Est. Priority Date: 05/31/2005
• Status: Active Grant

• Current Assignee: Regents of the University of California (University of California)
• Original Assignee: Regents of the University of California (University of California)
• Inventors: Imer, Bilge, Speck, James, DenBaars, Steven
• Granted Patent: US 8,097,481 B2
• Time in Patent Office: Days
• US Class Current: 438/46
• CPC Class Codes: C30B 25/02 Epitaxial-layer growth
• CPC Class Codes: C30B 25/18 characterised by the substrate
• CPC Class Codes: C30B 29/403 AIII-nitrides
• CPC Class Codes: C30B 29/406 Gallium nitride
• CPC Class Codes: H01L 21/02378 Silicon carbide
• CPC Class Codes: H01L 21/02389 Nitrides
• CPC Class Codes: H01L 21/0242 Crystalline insulating materials
• CPC Class Codes: H01L 21/02433 Crystal orientation
• CPC Class Codes: H01L 21/02458 Nitrides
• CPC Class Codes: H01L 21/02516 Crystal orientation
• CPC Class Codes: H01L 21/0254 Nitrides
• CPC Class Codes: H01L 21/02609 Crystal orientation
• CPC Class Codes: H01L 21/0262 Reduction or decomposition of gaseous compounds, e.g. CVD
• CPC Class Codes: H01L 21/02658 Pretreatments cleaning in general H01L21/02041

Abstract

A method of growing non-polar m-plane III-nitride film, such as GaN, AlN, AlGaN or InGaN, wherein the non-polar m-plane III-nitride film is grown on a suitable substrate, such as an m-SiC, m-GaN, LiGaO₂ or LiAlO₂ substrate, using metalorganic chemical vapor deposition (MOCVD). The method includes performing a solvent clean and acid dip of the substrate to remove oxide from the surface, annealing the substrate, growing a nucleation layer, such as aluminum nitride (AlN), on the annealed substrate, and growing the non-polar m-plane III-nitride film on the nucleation layer using MOCVD.

Claims

1. A method of growing a non-polar m-plane III-nitride film, comprising:

(a) growing the non-polar m-plane III-nitride film on a suitable substrate using metalorganic chemical vapor deposition (MOCVD).

2. The method of claim 1, wherein the substrate comprises an m-SiC, m-GaN, LiGaO₂ or LiAlO₂ substrate.

3. The method of claim 1, wherein the non-polar m-plane III-nitride film comprises GaN, AlN, AlGaN or InGaN.

4. The method of claim 1, further comprising growing a nucleation layer on the substrate and growing the non-polar m-plane III-nitride film on the nucleation layer.

5. The method of claim 1, wherein the nucleation layer comprises aluminum nitride (AlN).

6. The method of claim 1, wherein the growing step comprises the steps of:

(1) performing a solvent clean and acid dip of the substrate to remove oxide from the substrate surface;

(2) annealing the substrate after performing the solvent clean and acid dip;

(3) growing a nucleation layer on the substrate after the annealing step; and

(4) growing an epitaxial layer of the non polar m-plane III-nitride film on the nucleation layer.

7. A device, wafer, substrate or template fabricated using the method of claim 1.