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GROWTH OF NON-POLAR M-PLANE III-NITRIDE FILM USING METALORGANIC CHEMICAL VAPOR DEPOSITION (MOCVD)

  • US 20080026502A1
  • Filed: 10/10/2007
  • Published: 01/31/2008
  • Est. Priority Date: 05/31/2005
  • Status: Active Grant
First Claim
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1. A method of growing a non-polar m-plane III-nitride film, comprising:

  • (a) growing the non-polar m-plane III-nitride film on a suitable substrate using metalorganic chemical vapor deposition (MOCVD).

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