GROWTH OF NON-POLAR M-PLANE III-NITRIDE FILM USING METALORGANIC CHEMICAL VAPOR DEPOSITION (MOCVD)
First Claim
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1. A method of growing a non-polar m-plane III-nitride film, comprising:
- (a) growing the non-polar m-plane III-nitride film on a suitable substrate using metalorganic chemical vapor deposition (MOCVD).
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Abstract
A method of growing non-polar m-plane III-nitride film, such as GaN, AlN, AlGaN or InGaN, wherein the non-polar m-plane III-nitride film is grown on a suitable substrate, such as an m-SiC, m-GaN, LiGaO2 or LiAlO2 substrate, using metalorganic chemical vapor deposition (MOCVD). The method includes performing a solvent clean and acid dip of the substrate to remove oxide from the surface, annealing the substrate, growing a nucleation layer, such as aluminum nitride (AlN), on the annealed substrate, and growing the non-polar m-plane III-nitride film on the nucleation layer using MOCVD.
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7 Claims
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1. A method of growing a non-polar m-plane III-nitride film, comprising:
(a) growing the non-polar m-plane III-nitride film on a suitable substrate using metalorganic chemical vapor deposition (MOCVD). - View Dependent Claims (2, 3, 4, 5, 6, 7)
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