METHOD OF FORMING AN ELECTRICALLY CONDUCTIVE LINE IN AN INTEGRATED CIRCUIT
First Claim
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1. A method of forming a semiconductor structure, comprising:
- providing a semiconductor substrate comprising a layer of a dielectric material provided over an electrically conductive feature;
forming an opening in said layer of dielectric material, said opening being located over said electrically conductive feature and having a first dimension in a lateral direction, said lateral direction being substantially parallel to a surface of said layer of dielectric material;
forming a cavity in said electrically conductive feature, said cavity having a second dimension in said lateral direction, said second dimension being greater than said first dimension; and
filling said cavity and said opening with an electrically conductive material.
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Abstract
A method of forming a semiconductor structure comprises providing a semiconductor structure comprising a layer of a dielectric material provided over an electrically conductive feature. An opening is formed in the layer of dielectric material. The opening is located over the electrically conductive feature and has a first lateral dimension. A cavity is formed in the electrically conductive feature. The cavity has a second lateral dimension being greater than the first lateral dimension. The cavity and the opening are filled with an electrically conductive material.
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Citations
20 Claims
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1. A method of forming a semiconductor structure, comprising:
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providing a semiconductor substrate comprising a layer of a dielectric material provided over an electrically conductive feature; forming an opening in said layer of dielectric material, said opening being located over said electrically conductive feature and having a first dimension in a lateral direction, said lateral direction being substantially parallel to a surface of said layer of dielectric material; forming a cavity in said electrically conductive feature, said cavity having a second dimension in said lateral direction, said second dimension being greater than said first dimension; and filling said cavity and said opening with an electrically conductive material. - View Dependent Claims (2, 3, 4, 5)
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6. A method of forming a semiconductor structure, comprising:
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providing a semiconductor substrate comprising a layer of a dielectric material provided over an electrically conductive feature, said layer of dielectric material comprising an opening being located over said electrically conductive feature; performing a first etching process to form a recess in said electrically conductive feature, said first etching process being adapted to remove a material of the electrically conductive feature; forming a protective layer over a first portion of said recess, a second portion of said recess not being covered by said protective layer; and performing a second etching process, said second etching process being adapted to remove the material of the electrically conductive feature at a greater etch rate than a material of the protective layer. - View Dependent Claims (7, 8, 9, 10, 11)
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12. A method of forming a semiconductor structure, comprising:
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providing a semiconductor substrate comprising at least one layer of a dielectric material provided over an electrically conductive feature; forming an opening in said at least one layer of dielectric material, said opening having a first portion and a second portion, said second portion being located at a greater distance from said electrically conductive feature than said first portion, said first portion having a first dimension in a lateral direction, said lateral direction being substantially parallel to a surface of said layer of dielectric material, said second portion having a second dimension in said lateral direction, said first dimension being greater than said second dimension; and filling said opening with an electrically conductive material. - View Dependent Claims (13, 14, 15, 16, 17, 18, 19, 20)
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Specification