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METHOD OF FORMING AN ELECTRICALLY CONDUCTIVE LINE IN AN INTEGRATED CIRCUIT

  • US 20080026564A1
  • Filed: 02/23/2007
  • Published: 01/31/2008
  • Est. Priority Date: 07/31/2006
  • Status: Active Grant
First Claim
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1. A method of forming a semiconductor structure, comprising:

  • providing a semiconductor substrate comprising a layer of a dielectric material provided over an electrically conductive feature;

    forming an opening in said layer of dielectric material, said opening being located over said electrically conductive feature and having a first dimension in a lateral direction, said lateral direction being substantially parallel to a surface of said layer of dielectric material;

    forming a cavity in said electrically conductive feature, said cavity having a second dimension in said lateral direction, said second dimension being greater than said first dimension; and

    filling said cavity and said opening with an electrically conductive material.

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