METHOD FOR DEPOSITING AND CURING LOW-K FILMS FOR GAPFILL AND CONFORMAL FILM APPLICATIONS
First Claim
1. A method of making a silicon oxide layer on a substrate, the method comprising:
- forming the silicon oxide layer on the substrate in a reaction chamber by reacting an atomic oxygen precursor and a silicon precursor and depositing reaction products on the substrate, wherein the atomic oxygen precursor is generated outside the reaction chamber;
heating the silicon oxide layer at a temperature of about 600°
C. or less; and
exposing the silicon oxide layer to an induced coupled plasma.
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Abstract
Methods of making a silicon oxide layer on a substrate are described. The methods may include forming the silicon oxide layer on the substrate in a reaction chamber by reacting an atomic oxygen precursor and a silicon precursor and depositing reaction products on the substrate. The atomic oxygen precursor is generated outside the reaction chamber. The methods also include heating the silicon oxide layer at a temperature of about 600° C. or less, and exposing the silicon oxide layer to an induced coupled plasma. Additional methods are described where the deposited silicon oxide layer is cured by exposing the layer to ultra-violet light, and also exposing the layer to an induced coupled plasma.
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Citations
32 Claims
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1. A method of making a silicon oxide layer on a substrate, the method comprising:
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forming the silicon oxide layer on the substrate in a reaction chamber by reacting an atomic oxygen precursor and a silicon precursor and depositing reaction products on the substrate, wherein the atomic oxygen precursor is generated outside the reaction chamber;
heating the silicon oxide layer at a temperature of about 600°
C. or less; and
exposing the silicon oxide layer to an induced coupled plasma. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17)
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18. A method of forming a silicon oxide layer on a substrate, the method comprising:
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forming the silicon oxide layer on the substrate in a reaction chamber by reacting an atomic oxygen precursor and a silicon precursor and depositing reaction products on the substrate, wherein the atomic oxygen precursor is generated outside the reaction chamber;
exposing the silicon oxide layer to ultra-violet light; and
exposing the silicon oxide layer to an induced coupled plasma. - View Dependent Claims (19, 20, 21, 22, 23, 24, 25)
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26. A method of depositing and annealing a silicon oxide layer on a wafer substrate, the method comprising:
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providing the substrate wafer to an HDP-CVD process chamber where the deposition of the silicon oxide layer occurs;
providing a remote plasma generation unit outside the HDP-CVD process chamber, wherein the remote plasma generation unit is used to generate an atomic oxygen precursor that is supplied to the HDP-CVD process chamber;
supplying a silicon precursor to the HDP-CVD process chamber, wherein the silicon precursor and the atomic oxygen precursor react to form the silicon oxide layer on the wafer;
performing a first anneal on the deposited silicon oxide layer, wherein the first anneal comprises heating the layer to a temperature of about 300°
C. to about 600°
C. for about 1 minute to about 30 minutes; and
performing a second anneal on the deposited oxide layer, wherein the second anneal comprises exposing the layer to a high-density argon plasma for about 1 minute to about 10 minutes. - View Dependent Claims (27, 28, 29, 30, 31, 32)
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Specification