CAPACITIVE ACCELERATING SENSOR BONDING SILICON SUBSTRATE AND GLASS SUBSTRATE

• US 20080028856A1
• Filed: 02/27/2007
• Published: 02/07/2008
• Est. Priority Date: 08/07/2006
• Status: Abandoned Application

• Current Assignee: ALPS Electric Company Limited (Alps Alpine Co., Ltd.)
• Original Assignee: ALPS Electric Company Limited (Alps Alpine Co., Ltd.)
• Inventors: Sato, Kiyoshi, Fukuda, Tetsuya, Kikuiri, Katsuya
• Application Number:
  US11/679,638
• Publication Number:
  US 20080028856A1
• Time in Patent Office: Days
• US Class Current: 73/514.32
• CPC Class Codes: G01P 15/0802 Details
• CPC Class Codes: G01P 15/125 by capacitive pick-up
• CPC Class Codes: G01P 15/18 in two or more dimensions

Abstract

Provided is a capacitive acceleration sensor including a silicon substrate, which includes a movable electrode having a comb shape and a fixed electrode having a comb shape opposed to the comb shape of the movable electrode, and a pair of glass substrates having a concave portion forming a cavity on at least one side thereof, wherein the silicon substrate and the glass substrates are bonded to each other so that the movable electrode and the fixed electrode is disposed in the cavity. Accordingly, it is possible to provide the capacitive acceleration sensor having a small size and high sensitivity.

Claims

1. A capacitive acceleration sensor comprising:

a silicon substrate including a movable electrode having a comb shape and a fixed electrode having a comb shape opposed to the comb shape of the movable electrode; and

a pair of glass substrates having a concave portion forming a cavity on at least one side thereof,

wherein the silicon substrate and the glass substrates are bonded to each other so that the movable electrode and the fixed electrode are disposed in the cavity.

2. A capacitive acceleration sensor, wherein the capacitive acceleration sensor according to claim 1 and a capacitive acceleration sensor having a structure obtained by rotating the capacitive acceleration sensor by 90°

are stacked or arranged.

3. The capacitive acceleration sensor according to claim 1, wherein extraction electrodes for the movable electrode and the fixed electrode are provided on one substrate of the pair of glass substrates.

4. The capacitive acceleration sensor according to claim 1, wherein an interface between the glass substrates and the silicon substrate has an Si—

Si bond.

7. The capacitive acceleration sensor according to claim 1, wherein an interface between the glass substrates and the silicon substrate has an Si—

O bond.

5. A method of manufacturing a capacitive acceleration sensor, the method comprising:

manufacturing a silicon substrate including a movable electrode having a comb shape and a fixed electrode having a comb shape opposed to the comb shape of the movable electrode; and

bonding the silicon substrate and a pair of glass substrates so that the movable electrode and the fixed electrode are disposed in a cavity by using the pair of glass substrates having a concave portion forming the cavity on at least one side thereof.

6. The method according to claim 5, wherein bonding the silicon substrate and the glass substrates forms an interface between the glass substrates, and the silicon substrate has an Si—

Si bond.

8. The method according to claim 5, wherein bonding the silicon substrate and the glass substrates forms an interface between the glass substrates, and the silicon substrate has an Si—

O bond.