HERMETICALLY SEALED SEMICONDUCTOR DEVICE MODULE

• US 20080029875A1
• Filed: 06/07/2007
• Published: 02/07/2008
• Est. Priority Date: 06/07/2006
• Status: Active Grant

• Current Assignee: Infineon Technologies Americas Corp. (Infineon Technologies AG)
• Original Assignee: International Rectifier Corporation (Infineon Technologies AG)
• Inventors: Zhuang, Weidong, Hu, Weiping
• Granted Patent: US 8,198,712 B2
• Time in Patent Office: Days
• US Class Current: 257/691
• CPC Class Codes: H01L 23/04 characterised by the shape of the container or parts, e.g. caps, walls
• CPC Class Codes: H01L 23/049 the other leads being perpendicular to the base
• CPC Class Codes: H01L 25/072 the devices being arranged next to each other
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: H01L 2924/01079 Gold [Au]
• CPC Class Codes: H01L 2924/13055 Insulated gate bipolar transistor [IGBT]
• CPC Class Codes: H01L 2924/13091 Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]

Abstract

A sealed semiconductor power module that may include a rectifier, such as a silicon controlled rectifier (SCR), is provided. The module includes an AlN substrate having a bottom surface positioned on a metallic base plate and a top surface that includes a first pad and a second pad, the substrate including a copper body on both of the two major surfaces. The module also includes a first die and a second die positioned on top of the first and second pads, respectively, the first die and the second die each including a main contact area on a top surface thereof, the first die including an isolated gate area on the top surface to which is coupled a gate terminal; and first and second power terminals in direct wirebondless electrical connection via molybdenum tabs with the main contact areas of the die.

Claims

1. A sealed semiconductor power module comprising:

a metallic base plate having a metallic plating;

a substrate comprised of aluminum and nitrogen, and having two major surfaces, a bottom surface of the two major surfaces positioned on the base plate and a top surface of the two major surfaces including a first pad and a second pad, the substrate including a directly bonded copper bonding bonded to both of the two major surfaces;

a first die positioned on top of the first pad and a second die positioned on top of the second pad, the first die and the second die each including a main contact area on a top surface thereof, the first die including a gate area on the top surface thereof, the gate area being isolated from direct electrical contact with the main contact area of the first die;

a first power terminal in direct wirebondless electrical connection via a first tab with the main contact area of the first die, and a second power terminal in direct wirebondless electrical connection via a second tab with the main contact area of the second die;

a third power terminal in direct wirebondless electrical connection via a third tab with the substrate;

a gate terminal in electrical contact with the gate area; and

a cover physically attached to the base plate, the cover configured to seal the module such that a contact portion of the first power terminal, a contact portion of the second power terminal, a contact portion of the third power terminal, and a contact portion of the gate terminal are exposed over a top surface of a top of the cover.

2. The sealed semiconductor power module of claim 1, wherein the first pad, the second pad, the third pad and the gate pad each comprise molybdenum.

3. The sealed semiconductor power module of claim 1, further comprising a fourth power terminal in direct wirebondless electrical connection with the substrate and having a fourth power terminal contact portion exposed over the top surface of the top of the cover.

4. The sealed semiconductor power module of claim 1, further comprising a second gate terminal in ohmic contact with a cathode region of the module and having a second gate terminal contact portion exposed over the top surface of the top of the cover.

5. The sealed semiconductor power module of claim 1, wherein the cover comprises a frame physically attached to the base plate and a lid physically attached to the frame, the lid comprising the top of the cover and including apertures configured to be traversed by the contact portions.

6. The sealed semiconductor power module of claim 1, wherein the base plate comprises a nickel and gold plating.

7. The sealed semiconductor power module of claim 1, wherein the base plate is comprised of molybdenum.

8. The sealed semiconductor power module of claim 1, wherein the base plate is comprised of aluminum, silicon and carbon.

9. The sealed semiconductor power module of claim 1, wherein the cover is mostly comprised of an injection molded conductive polymer.

10. The sealed semiconductor power module of claim 3, wherein the cover comprises first, second, third and fourth brass inserts configured to receive, respectively, the contact portion of the first power terminal, the contact portion of the second power terminal, the contact portion of the third power terminal, and the contact portion of the fourth power terminal.

11. The sealed semiconductor power module of claim 1, wherein the cover is physically attached to the base plate by a high strength adhesive and is encapsulated with a soft gel.

12. The sealed semiconductor power module of claim 1, wherein the module comprises a rectifier.

13. The sealed semiconductor power module of claim 1, wherein the module comprises a silicon controlled rectifier.

14. A sealed semiconductor power module including a rectifier, the module comprising:

a metallic base plate comprising a nickel and gold plating;

a substrate comprised of aluminum and nitrogen and having a directly bonded copper bonding on both of two major surfaces of the substrate;

a bottom surface of the two major surfaces positioned on the base plate and a top surface of the two major surfaces including a first pad and a second pad;

a first die positioned on top of the first pad and a second die positioned on top of the second pad, the first die and the second die each including a main contact area on a top surface thereof, the first die including a gate area on the top surface thereof, the gate area being isolated from direct electrical contact with the main contact area of the first die;

a first power terminal in direct wirebondless electrical connection via a first molybdenum tab with the main contact area of the first die, and a second power terminal in direct wirebondless electrical connection via a second molybdenum tab with the main contact area of the second die;

a third power terminal in direct wirebondless electrical connection via a third molybdenum tab with the substrate;

a fourth power terminal in direct wirebondless electrical connection via a fourth molybdenum tab with the substrate; and

a gate terminal in ohmic contact with the gate area, and a second gate terminal in ohmic contact with a cathode region of the module;

a cover physically attached to the base plate, the cover configured to seal the module such that a contact portion of the first power terminal, a contact portion of the second power terminal, a contact portion of the third power terminal, a contact portion of the fourth power terminal, a contact portion of the first gate terminal, and a contact portion of the second gate terminal are exposed over a top surface of a top of the cover.

15. The sealed semiconductor power module of claim 14, wherein the base plate is comprised of aluminum, silicon and carbon.

16. The sealed semiconductor power module of claim 14, wherein the base plate is comprised of molybdenum.

17. The sealed semiconductor power module of claim 14, wherein the module comprises a silicon controlled rectifier.