Charge coupled device

• US 20080030607A1
• Filed: 01/23/2007
• Published: 02/07/2008
• Est. Priority Date: 01/26/2006
• Status: Active Grant

• Current Assignee: Fujifilm Corporation (Fujifilm Holdings Corporation)
• Original Assignee: Fujifilm Corporation (Fujifilm Holdings Corporation)
• Inventors: Kobayashi, Makoto, Ikeda, Katsumi
• Granted Patent: US 7,580,073 B2
• Time in Patent Office: Days
• US Class Current: 348/311
• CPC Class Codes: H01L 27/14806 Structural or functional details thereof
• CPC Class Codes: H01L 29/76816 Output structures
• CPC Class Codes: H04N 25/00 Circuitry of solid-state image sensors [SSIS]; Control thereof
• CPC Class Codes: H04N 25/713 Transfer or readout registers; Split readout registers or multiple readout registers
• CPC Class Codes: H04N 3/1575 Picture signal readout register, e.g. shift registers, interline shift registers

Abstract

A charge coupled device comprises: a semiconductor substrate of one conductivity type; a one-dimensional first charge coupled device including a plurality of continuous electrodes arranged in a one-dimensional array on the semiconductor substrate and a channel region formed below each of the electrodes; a second charge coupled device that is continuous to an end of the first charge coupled device and includes two branched portions, each of the two branched portions comprising at least one electrode arranged in the one-dimensional array; a detecting portion that detects as an electrical signal a charge transferred by each of the branch portions of the second charge coupled device; and a signal output portion that outputs a signal detected by the detecting portion, wherein distal one of the electrodes of the first charge coupled device, which is adjacent to the second charge coupled device, is formed independently from the other ones of the electrodes of the first charge coupled device so as to be fixed at a predetermined dc potential.

Claims

1. A charge coupled device comprising:

a semiconductor substrate of one conductivity type;

a one-dimensional first charge coupled device including a plurality of continuous electrodes arranged in a one-dimensional array on the semiconductor substrate and a channel region formed below each of the electrodes;

a second charge coupled device that is continuous to an end of the first charge coupled device and includes two branched portions, each of the two branched portions comprising at least one electrode arranged in the one-dimensional array;

a detecting portion that detects as an electrical signal a charge transferred by each of the branch portions of the second charge coupled device; and

a signal output portion that outputs a signal detected by the detecting portion,

wherein distal one of the electrodes of the first charge coupled device, which is adjacent to the second charge coupled device, is formed independently from the other ones of the electrodes of the first charge coupled device so as to be fixed at a predetermined dc potential.

2. The charge coupled device according to claim 1,

wherein the plurality of continuous electrodes of the first charge coupled device are driven by two-phase clocks of a predetermined frequency having inverse phases to one another, and

one of said at least one electrode of each of the two branched portions of the second charge coupled device, which is adjacent to the distal one of the electrodes of the first charge coupled device fixed at the predetermined fixed potential, is driven by a two-phase clock having a period two times the two-phase clocks applied to the first charge coupled device.

3. The charge coupled device according to claim 1,

wherein, by using as a boundary a first channel region below the distal one of the electrodes of the first charge coupled device fixed at the predetermined fixed potential, an impurity layer of a conductivity type that increases the potential is further provided at a portion of the channel region on the downstream side in the charge transferring direction of the first channel region.

4. The charge coupled device according to claim 1,

wherein, by using as a boundary a first channel region below the distal one of the electrodes of the first charge coupled device fixed at the predetermined fixed potential, an impurity layer of a conductivity type that decreases the potential is further provided at a portion of the channel region on an upstream side in the charge transferring direction of the first channel region.

5. A method of driving the charge device according to claim 1, comprising

driving each of the electrodes of the first charge coupled device and one of said at least one electrode of each of the two branched portions of the second charge coupled device, which is adjacent to the distal one of the electrodes of the first charge coupled device, such that a step-like potential continuous toward a downstream side in a charge transferring direction is formed,

wherein a signal charge from the channel region below the electrodes of the first charge coupled device passes through a first channel region below the distal one of the electrodes of the first charge coupled device which is fixed at the predetermined dc potential, and is transferred so as to reach the channel region below said at least one electrode of each of the two branched portions of the second charge coupled device without being accumulated midway in the transfer from the first charge coupled device to the second charge coupled device.

6. The method of claim 5,

wherein the plurality of continuous electrodes of the first charge coupled device are driven by two-phase clocks of a predetermined frequency having inverse phases to one another, and

one of said at least one electrode of each of the two branched portions of the second charge coupled device, which is adjacent to the distal one of the electrodes of the first charge coupled device fixed at the predetermined fixed potential, is driven by a two-phase clock having a period two times the two-phase clocks applied to the first charge coupled device.