Thin-film coatings, electro-optic elements and assemblies incorporating these elements

• US 20080030836A1
• Filed: 03/05/2007
• Published: 02/07/2008
• Est. Priority Date: 03/03/2006
• Status: Active Grant

• Current Assignee: Gentex Corporation
• Original Assignee: Gentex Corporation
• Inventors: Neuman, George, Luten, Henry, Perron, Lansen, Brummel, Nelson, Dozeman, Gary, Forgette, Jeffrey, Anderson, John, Poe, G. Bruce, Tonar, William, Cammenga, David
• Granted Patent: US 7,688,495 B2
• Time in Patent Office: Days
• US Class Current: 359/271
• CPC Class Codes: B60R 1/084 using a removable filtering or hiding screen associated with windows or windscreens B60J3/00
• CPC Class Codes: G02F 1/155 Electrodes
• CPC Class Codes: G02F 1/157 Structural association of cells with optical devices, e.g. reflectors or illuminating devices

Abstract

Electro-optic elements are becoming commonplace in a number of vehicular and architectural applications. Various electro-optic element configurations provide variable transmittance and or variable reflectance for windows and mirrors. The present invention relates to various thin-film coatings, electro-optic elements and assemblies incorporating these elements.

Claims

1. An electro-optic element, comprising:

a first substrate comprising a first and second surface, said first substrate comprising at least one layer of material on at least one of said first and second surfaces comprising a mean peak-to-valley surface roughness less than or equal to approximately 150 Å

; and

a second substrate comprising a third and fourth surface, said second substrate comprising at least one layer of material on at least one of said third and fourth surfaces comprising a mean peak-to-valley surface roughness less than or equal to approximately 150 Å

.

2. An electro-optic element as in claim 1 wherein said mean peak-to-valley surface roughness is less than or equal to about 100 Å

.

3. An electro-optic element as in claim 1 wherein said mean peak-to-valley surface roughness is less than or equal to about 50 Å

.

4. An electro-optic element as in claim 1 wherein said mean peak-to-valley surface roughness is less than or equal to about 25 Å

.

5. An electro-optic element as in claim 1 wherein said at least one layer of material comprises a layer of indium-tin-oxide.

6. An electro-optic element as in claim 5 wherein a thickness of said indium-tin-oxide layer is at least approximately one-quarter wave.

7. An electro-optic element as in claim 5 wherein said indium-tin-oxide layer thickness is at least approximately one-halve wave.

8. An electro-optic element as in claim 1 wherein said at least one layer of material comprises a bulk resistance less than 200 μ

ohm-cm.

9. An electro-optic element as in claim 1 wherein said at least one layer of material comprises a layer of chrome.

10. An electro-optic element as in claim 9 wherein a thickness of said layer of chrome is at least approximately 250 Å

.

11. An electro-optic element as in claim 9 wherein an upper surface of said at least one layer of chrome was smoothed via ion-milling subsequent to be deposited.

12. An electro-optic element as in claim 9 wherein said layer of chrome comprises a reflectance of at least approximately 80% of a theoretical possible value.

13. An electro-optic element as in claim 1 comprising variable transmittance.

14. An electro-optic element as in claim 1 comprising variable reflectance.

15. An electro-optic element, comprising:

a first substrate comprising a first and second surface, said first substrate comprising at least one layer of material on at least one of said surfaces comprising a mean peak-to-valley surface roughness less than or equal to approximately 150 Å

.

16. An electro-optic element as in claim 15 wherein said mean peak-to-valley surface roughness is less than or equal to about 100 Å

.

17. An electro-optic element as in claim 15 wherein said mean peak-to-valley surface roughness is less than or equal to about 50 Å

.

18. An electro-optic element as in claim 15 wherein said mean peak-to-valley surface roughness is less than or equal to about 25 Å

.

19. An electro-optic element as in claim 15 wherein said at least one layer of material comprises a layer of indium-tin-oxide.

20. An electro-optic element as in claim 19 wherein a thickness of said indium-tin-oxide layer is at least approximately one-quarter wave.

21. An electro-optic element as in claim 19 wherein said indium-tin-oxide layer thickness is at least approximately one-halve wave.

22. An electro-optic element as in claim 15 wherein said at least one layer of material comprises a bulk resistance less than 200 μ

ohm-cm.

23. An electro-optic element as in claim 15 wherein said at least one layer of material comprises a layer of chrome.

24. An electro-optic element as in claim 23 wherein a thickness of said layer of chrome is at least approximately 250 Å

.

25. An electro-optic element as in claim 23 wherein an upper surface of said at least one layer of chrome was smoothed via ion-milling subsequent to be deposited.

26. An electro-optic element as in claim 23 wherein said layer of chrome comprises a reflectance of at least approximately 80% of a theoretical possible value.

27. An electro-optic element as in claim 15 comprising variable transmittance.

28. An electro-optic element as in claim 15 comprising variable reflectance.

29. An electro-optic element as in claim 15 further comprising a second substrate comprising a third and fourth surface, said second substrate comprising at least one layer of material on at least one of said third and fourth surfaces comprising a mean peak-to-valley surface roughness less than or equal to approximately 150 Å

.

30. An electro-optic element, comprising:

a first substrate comprising a first and second surface, said first substrate comprising at least one layer of indium-tin-oxide on said second surface comprising a mean peak-to-valley surface roughness less than or equal to approximately 150 Å

; and

a second substrate comprising a third and fourth surface, said second substrate comprising at least one layer of chrome on said third surface comprising a mean peak-to-valley surface roughness less than or equal to approximately 150 Å

.

31. An electro-optic element as in claim 30 wherein a thickness of said indium-tin-oxide layer is at least approximately one-quarter wave.

32. An electro-optic element as in claim 30 wherein said indium-tin-oxide layer thickness is at least approximately one-halve wave.

33. An electro-optic element as in claim 30 wherein said indium-tin-oxide layer thickness is at least approximately 80% of one-halve wave.

34. An electro-optic element as in claim 30 wherein said of indium-tin-oxide comprises a bulk resistance less than 200 μ

ohm-cm.

35. An electro-optic element as in claim 30 wherein a thickness of said layer of chrome is at least approximately 250 Å

.

36. An electro-optic element as in claim 30 wherein an upper surface of said layer of chrome was smoothed via ion-milling subsequent to be deposited.

37. An electro-optic element as in claim 30 wherein said layer of chrome comprises a reflectance of at least approximately 80% of a theoretical possible value.

38. An electro-optic element as in claim 30 comprising variable reflectance.

39. An electro-optic element as in claim 30 further comprising a second layer of chrome proximate a periphery area of said second surface.

40. An electro-optic element as in claim 39 wherein an upper surface of said second layer of chrome was smoothed via ion-milling subsequent to be deposited.

41. An electro-optic element, comprising:

a first substrate comprising a first and second surface, said first substrate comprising a layer of indium-tin-oxide on said second surface comprising a mean peak-to-valley surface roughness less than or equal to approximately 150 Å

; and

a second substrate comprising a third and fourth surface, said second substrate comprising a layer of indium-tin-oxide on said third surface comprising a mean peak-to-valley surface roughness less than or equal to approximately 150 Å

.

42. An electro-optic element as in claim 41 wherein said indium-tin-oxide layers thicknesses are at least approximately one-halve wave.

43. An electro-optic element as in claim 41 wherein said indium-tin-oxide layers comprises a bulk resistance less than 200 μ

ohm-cm.

44. An electro-optic element as in claim 41 comprising variable transmittance.