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Inverted-trench grounded-source fet structure using conductive substrates, with highly doped substrates

  • US 20080035987A1
  • Filed: 08/08/2006
  • Published: 02/14/2008
  • Est. Priority Date: 08/08/2006
  • Status: Active Grant
First Claim
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1. An inverted field-effect-transistor (iT-FET) semiconductor device comprising a source disposed on a bottom and a drain disposed on a top of a semiconductor substrate further comprising:

  • a vertical current conducting channel between said source and said drain controlled by a vertical sidewall gate disposed on sidewalls of a trench and padded by a gate oxide layer attached to said sidewalls of said trench; and

    a source-body short structure extending downwardly from a bottom surface of said trench for electrically shorting a body region in said substrate to a source disposed on under a bottom of said trench.

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