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THIN-FILM TRANSISTOR DISPLAY DEVICES HAVING COMPOSITE ELECTRODES

  • US 20080035999A1
  • Filed: 08/09/2007
  • Published: 02/14/2008
  • Est. Priority Date: 02/29/1996
  • Status: Active Grant
First Claim
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1. A thin-film transistor display device, comprising:

  • a gate line and a gate electrode on a substrate;

    a first insulating layer on the gate line and gate electrode;

    a semiconductor layer on said first insulating layer;

    a data line including a source electrode and a drain electrode on said semiconductor layer, said data line and drain electrode comprising an underlying refractory metal layer in contact with said semiconductor layer and a metal layer on the refractory metal layer;

    a second insulating layer directly contacting a portion of said semiconductor layer and having a contact hole therein that exposes the refractory metal layer and side walls of the metal layer;

    a pixel electrode on said second insulating layer, said pixel electrode extending into the contact hole and directly contacting said refractory metal layer;

    a first conductive pattern electrically connected to an end portion of the gate line; and

    a second conductive pattern electrically connected to an end portion of the data line.

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