Temperature detecting circuit

• US 20080036525A1
• Filed: 06/29/2007
• Published: 02/14/2008
• Est. Priority Date: 08/11/2006
• Status: Active Grant

• Current Assignee: Hynix Semiconductor Incorporated (SK Hynix Inc.)
• Original Assignee: Hynix Semiconductor Incorporated (SK Hynix Inc.)
• Inventors: Kim, Dong Kyun
• Granted Patent: US 7,703,975 B2
• Time in Patent Office: Days
• US Class Current: 327/512
• CPC Class Codes: G01K 7/015 using microstructures, e.g. made of silicon
• CPC Class Codes: G01K 7/425 Thermal management of integrated systems

Abstract

A temperature detecting circuit includes a temperature detecting unit that generates a first temperature detecting signal according to a temperature. A temperature information control unit generates a control signal by the first temperature detecting signal, supplies the control signal to the temperature detecting unit, and generates a second temperature detecting signal by the control signal and the first temperature detecting signal. A temperature information output unit generates a temperature information signal in accordance with the second temperature detecting signal and the control signal.

Claims

1. A temperature detecting circuit comprising:

a temperature detecting unit configured to generate a first temperature detecting signal according to a temperature;

a temperature information control unit configured to generate a control signal based on the first temperature detecting signal, supply the control signal to the temperature detecting unit, and generate a second temperature detecting signal based on the control signal and the first temperature detecting signal; and

a temperature information output unit configured to generate a temperature information signal in accordance with the second temperature detecting signal and the control signal.

2. The temperature detecting circuit of claim 1,

wherein the temperature detecting unit includes:

a voltage supply unit configured to output a changed voltage according to a potential level of the control signal; and

a temperature sensor configured to receive the changed voltage from the voltage supply unit to generate the first temperature detecting signal having a potential level corresponding to the temperature.

3. The temperature detecting circuit of claim 2,

wherein the voltage supply unit is a MOS transistor that includes a gate receiving the control signal, a source supplied with an external voltage, and a drain connected to the temperature sensor.

4. The temperature detecting circuit of claim 2,

wherein the temperature sensor is a bipolar transistor that includes an emitter supplied with the changed voltage output from the voltage supply unit, and a base and a collector commonly connected to a ground terminal.

5. The temperature detecting circuit of claim 4,

wherein the first temperature detecting signal is a voltage between the emitter and the collector of the bipolar transistor.

6. The temperature detecting circuit of claim 1,

wherein the temperature information control unit includes:

a control signal generating unit configured to generate the control signal based on the first temperature detecting signal from the temperature detecting unit;

a voltage supply unit configured to output a changed voltage according to a potential level of the control signal;

a voltage converting unit configured to drop the changed voltage output of the voltage supply unit to obtain an output voltage; and

a temperature sensor configured to receive the output voltage of the voltage converting unit and generate the second temperature detecting signal according to the temperature.

7. The temperature detecting circuit of claim 6,

wherein the voltage supply unit is a MOS transistor that includes a gate receiving the control signal, a source supplied with an external voltage, and a drain connected to the voltage converting unit.

8. The temperature detecting circuit of claim 6,

wherein the control signal generating unit makes the first temperature detecting signal and the changed voltage output of the voltage supply unit have the same potential level, to generate the control signal.

9. The temperature detecting circuit of claim 8,

wherein the control signal generating unit is an operational amplifier that includes a first input terminal receiving the first temperature detecting signal and a second input terminal supplied with the changed voltage output of the voltage supply unit.

10. The temperature detecting circuit of claim 6,

wherein the voltage converting unit is a resistor connected between the voltage supply unit and the temperature sensor.

11. The temperature detecting circuit of claim 6,

wherein the temperature sensor is a bipolar transistor that includes an emitter receiving the output voltage of the voltage converting unit, and a base and a collector commonly connected to a ground terminal.

12. The temperature detecting circuit of claim 11,

wherein the second temperature detecting signal is an emitter-collector voltage of the bipolar transistor.

13. The temperature detecting circuit of claim 1,

wherein the temperature information output unit includes:

a first current adjusting unit configured to control intensity of a first current according to a potential level of the control signal;

a second current adjusting unit configured to control intensity of a second current according to a potential level of a current control signal;

a temperature information signal generating unit configured to determine a potential level of the temperature information signal in response to the intensities of the first current and the second current; and

a current control signal generating unit configured to generate the current control signal according to a potential level of the second temperature detecting signal.

14. The temperature detecting unit of claim 13,

wherein the first current adjusting unit is a MOS transistor that includes a gate receiving the control signal, a source supplied with an external voltage, and a drain connected to the temperature information signal generating unit, and wherein

the drain of the MOS transistor generates the first current.

15. The temperature detecting unit of claim 13,

wherein the first current adjusting unit is a MOS transistor that includes a gate receiving the current control signal, a source supplied with an external voltage, and a drain connected to the temperature information signal generating unit, and wherein

the drain of the MOS transistor generates the second current.

16. The temperature detecting circuit of claim 13,

wherein the temperature information signal generating unit includes first and second resistors that are connected in series between the second current adjusting unit and a ground terminal, and wherein

the potential level of the temperature information signal is determined according to a total resistance value of the first and second resistors and the intensity of the second current.

17. The temperature detecting circuit of claim 16,

wherein the second current flows through the first resistor, and

the first and second currents flow through the second resistor.

18. The temperature detecting circuit of claim 13,

wherein the current control signal generating unit makes the second temperature detecting signal and an output voltage of the temperature information signal generating unit the same, to determine the current control signal.

19. The temperature detecting circuit of claim 18,

wherein the current control signal generating unit is an operational amplifier that has a first input terminal receiving the second temperature detecting signal and a second input terminal supplied with the output voltage of the temperature information signal generating unit,

wherein the output voltage of the temperature information signal generating unit is a voltage corresponding to the intensity of a current flowing through a second resistive element.

20. The temperature detecting circuit of claim 1,

wherein a MOS transistor of the temperature detecting unit is larger than a MOS transistor of the temperature information control unit.

21. The temperature detecting circuit of claim 1,

wherein a bipolar transistor of the temperature detecting unit is smaller than a bipolar transistor of the temperature information control unit.

22. The temperature detecting circuit of claim 1,

wherein a MOS transistor of the temperature information control unit has the same size as a MOS transistor that serves as a first current adjusting unit of the temperature information output unit.