SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THEREOF
First Claim
1. A liquid crystal display device comprising;
- a thin film transistor formed over a substrate, the thin film transistor including at least a channel forming region, a source region, a drain region, a gate insulating film and a gate electrode;
a scanning line formed over the substrate wherein the scanning line is connected to the gate electrode of the thin film transistor;
a signal line formed over the substrate and electrically connected to one of the source region and the drain region of the thin film transistor wherein the signal line extends across the scanning line;
a storage capacitor electrically connected to the other one of the source region and the drain region of the thin film transistor, the storage capacitor including a capacitor wiring formed on a same surface as the gate electrode;
an insulating film formed over the thin film transistor, the scanning line, the capacitor wiring and the signal line; and
a pixel electrode formed over the insulating film and electrically connected to the other one of the source region and the drain region of the thin film transistor, wherein at least a portion of the capacitor wiring extends in a direction parallel with the signal line, wherein the gate electrode is formed in a different layer from the scanning line.
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Accused Products
Abstract
To provide a liquid crystal display device having high quality display with a high aperture ratio while securing a sufficient storage capacitor (Cs), and at the same time, by dispersing a load (a pixel writing-in electric current) of a capacitor wiring in a timely manner to effectively reduce the load. A scanning line is formed on a layer that is different from a gate electrode so that the capacitor wiring is arranged in parallel with a signal line. Each pixel is connected to the individually independent capacitor wiring via a dielectric. Therefore, variations in the electric potential of the capacitor wiring caused by a writing-in electric current of adjacent pixels can be avoided, thereby obtaining satisfactory display images.
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Citations
24 Claims
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1. A liquid crystal display device comprising;
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a thin film transistor formed over a substrate, the thin film transistor including at least a channel forming region, a source region, a drain region, a gate insulating film and a gate electrode;
a scanning line formed over the substrate wherein the scanning line is connected to the gate electrode of the thin film transistor;
a signal line formed over the substrate and electrically connected to one of the source region and the drain region of the thin film transistor wherein the signal line extends across the scanning line;
a storage capacitor electrically connected to the other one of the source region and the drain region of the thin film transistor, the storage capacitor including a capacitor wiring formed on a same surface as the gate electrode;
an insulating film formed over the thin film transistor, the scanning line, the capacitor wiring and the signal line; and
a pixel electrode formed over the insulating film and electrically connected to the other one of the source region and the drain region of the thin film transistor, wherein at least a portion of the capacitor wiring extends in a direction parallel with the signal line, wherein the gate electrode is formed in a different layer from the scanning line. - View Dependent Claims (3, 4, 5, 6, 7)
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2. (canceled)
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8. A liquid crystal display device comprising;
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a thin film transistor formed over a substrate, the thin film transistor including at least a channel forming region, a source region, a drain region, a gate insulating film and a gate electrode;
a scanning line formed over the substrate wherein the scanning line is connected to the gate electrode of the thin film transistor;
a signal line formed over the substrate and electrically connected to one of the source region and the drain region of the thin film transistor wherein the signal line extends across the scanning line;
a conductive layer formed on a same surface as the gate electrode wherein the signal line extends in parallel with the conductive layer and overlaps the conductive layer at least partly;
an insulating film formed over the thin film transistor, the scanning line, the conductive layer and the signal line; and
a pixel electrode formed over the insulating film and electrically connected to the other one of the source region and the drain region of the thin film transistor, wherein the gate electrode is formed in a different layer from the scanning line. - View Dependent Claims (9, 11, 12, 13)
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10. (canceled)
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14. A liquid crystal display device comprising;
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a thin film transistor formed over a substrate, the thin film transistor including at least a channel forming region, a source region, a drain region, a gate insulating film and a gate electrode;
a first insulating film formed over the thin film transistor;
a scanning line formed over the insulating film wherein the scanning line is connected to the gate electrode of the thin film transistor;
a signal line formed over the substrate and electrically connected to one of the source region and the drain region of the thin film transistor wherein the signal line extends across the scanning line;
a storage capacitor electrically connected to the other one of the source region and the drain region of the thin film transistor, the storage capacitor including a capacitor wiring formed on a same surface as the gate electrode;
a second insulating film formed over the thin film transistor, the scanning line, the capacitor wiring and the signal line, and a pixel electrode formed over the second insulating film and electrically connected to the other one of the source region and the drain region of the thin film transistor, wherein at least a portion of the capacitor wiring extends in a direction parallel with the signal line. - View Dependent Claims (15, 16, 17, 18, 19)
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20. A liquid crystal display device comprising:
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a thin film transistor formed over a substrate, the thin film transistor including at least a channel forming region, a source region, a drain region, a gate insulating film and a gate electrode;
a first insulating film formed over the thin film transistor;
a scanning line formed over the first insulating film wherein the scanning line is connected to the gate electrode of the thin film transistor;
a signal line formed over the substrate and electrically connected to one of the source region and the drain region of the thin film transistor wherein the signal line extends across the scanning line;
a conductive layer formed on a same surface as the gate electrode wherein the signal line extends in parallel with the conductive layer and overlaps the conductive layer at least partly;
a second insulating film formed over the thin film transistor, the scanning line, the conductive layer and the signal line; and
a pixel electrode formed over the second insulating film and electrically connected to the other one of the source region and the drain region of the thin film transistor. - View Dependent Claims (21, 22, 23, 24)
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Specification