SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THEREOF

• US 20080036935A1
• Filed: 10/15/2007
• Published: 02/14/2008
• Est. Priority Date: 09/27/1999
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: ISOBE, Atsuo, SHIBATA, Hiroshi
• Granted Patent: US 7,541,618 B2
• Time in Patent Office: Days
• US Class Current: 349/38
• CPC Class Codes: G02F 1/136213 Storage capacitors associated with the pixel electrode
• CPC Class Codes: G02F 1/136227 Through-hole connection of the pixel electrode to the active element through an insulation layer
• CPC Class Codes: G02F 1/136286 Wiring, e.g. gate line, drain line
• CPC Class Codes: G02F 2201/40 Arrangements for improving the aperture ratio
• CPC Class Codes: H01L 27/124 with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits wiring structures per se H01L23/52
• CPC Class Codes: H01L 27/1248 with a particular composition or shape of the interlayer dielectric specially adapted to the circuit arrangement
• CPC Class Codes: H01L 27/1255 integrated with passive devices, e.g. auxiliary capacitors

Abstract

To provide a liquid crystal display device having high quality display with a high aperture ratio while securing a sufficient storage capacitor (Cs), and at the same time, by dispersing a load (a pixel writing-in electric current) of a capacitor wiring in a timely manner to effectively reduce the load. A scanning line is formed on a layer that is different from a gate electrode so that the capacitor wiring is arranged in parallel with a signal line. Each pixel is connected to the individually independent capacitor wiring via a dielectric. Therefore, variations in the electric potential of the capacitor wiring caused by a writing-in electric current of adjacent pixels can be avoided, thereby obtaining satisfactory display images.

Claims

1. A liquid crystal display device comprising;

a thin film transistor formed over a substrate, the thin film transistor including at least a channel forming region, a source region, a drain region, a gate insulating film and a gate electrode;

a scanning line formed over the substrate wherein the scanning line is connected to the gate electrode of the thin film transistor;

a signal line formed over the substrate and electrically connected to one of the source region and the drain region of the thin film transistor wherein the signal line extends across the scanning line;

a storage capacitor electrically connected to the other one of the source region and the drain region of the thin film transistor, the storage capacitor including a capacitor wiring formed on a same surface as the gate electrode;

an insulating film formed over the thin film transistor, the scanning line, the capacitor wiring and the signal line; and

a pixel electrode formed over the insulating film and electrically connected to the other one of the source region and the drain region of the thin film transistor,

wherein at least a portion of the capacitor wiring extends in a direction parallel with the signal line,

wherein the gate electrode is formed in a different layer from the scanning line.

3. The liquid crystal display device according to claim 1 wherein the gate electrode is located over the channel region.

4. The liquid crystal display device according to claim 1 wherein the capacitor wiring extends across the scanning line.

5. The liquid crystal display device according to claim 1 wherein signal line overlaps the capacitor wiring.

6. The liquid crystal display device according to claim 1 wherein the storage capacitor includes a semiconductor layer overlapped with a portion of the capacitor wiring, the semiconductor layer formed on a same surface as the channel forming region.

7. The liquid crystal display device according to claim 1 wherein the capacitor wiring is overlapped with the scanning line.

2. (canceled)

8. A liquid crystal display device comprising;

a thin film transistor formed over a substrate, the thin film transistor including at least a channel forming region, a source region, a drain region, a gate insulating film and a gate electrode;

a scanning line formed over the substrate wherein the scanning line is connected to the gate electrode of the thin film transistor;

a signal line formed over the substrate and electrically connected to one of the source region and the drain region of the thin film transistor wherein the signal line extends across the scanning line;

a conductive layer formed on a same surface as the gate electrode wherein the signal line extends in parallel with the conductive layer and overlaps the conductive layer at least partly;

an insulating film formed over the thin film transistor, the scanning line, the conductive layer and the signal line; and

a pixel electrode formed over the insulating film and electrically connected to the other one of the source region and the drain region of the thin film transistor,

wherein the gate electrode is formed in a different layer from the scanning line.

9. The liquid crystal display device according to claim 8 further comprising a storage capacitor including the conductive layer as an electrode of the storage capacitor.

11. The liquid crystal display device according to claim 8 wherein the gate electrode is located over the channel region.

12. The liquid crystal display device according to claim 8 wherein the conductive layer extends across the scanning line.

13. The liquid crystal display device according to claim 8 wherein the conductive layer is overlapped with the scanning line.

10. (canceled)

14. A liquid crystal display device comprising;

a thin film transistor formed over a substrate, the thin film transistor including at least a channel forming region, a source region, a drain region, a gate insulating film and a gate electrode;

a first insulating film formed over the thin film transistor;

a scanning line formed over the insulating film wherein the scanning line is connected to the gate electrode of the thin film transistor;

a signal line formed over the substrate and electrically connected to one of the source region and the drain region of the thin film transistor wherein the signal line extends across the scanning line;

a storage capacitor electrically connected to the other one of the source region and the drain region of the thin film transistor, the storage capacitor including a capacitor wiring formed on a same surface as the gate electrode;

a second insulating film formed over the thin film transistor, the scanning line, the capacitor wiring and the signal line, and

a pixel electrode formed over the second insulating film and electrically connected to the other one of the source region and the drain region of the thin film transistor,

wherein at least a portion of the capacitor wiring extends in a direction parallel with the signal line.

15. The liquid crystal display device according to claim 14 wherein the gate electrode is located over the channel region.

16. The liquid crystal display device according to claim 14 wherein the capacitor wiring extends across the scanning line.

17. The liquid crystal display device according to claim 14 wherein signal line overlaps the capacitor wiring.

18. The liquid crystal display device according to claim 14 wherein the storage capacitor includes a semiconductor layer overlapped with a portion of the capacitor wiring, the semiconductor layer formed on a same surface as the channel forming region.

19. The liquid crystal display device according to claim 14 wherein the capacitor wiring is overlapped with the scanning line.

20. A liquid crystal display device comprising:

a thin film transistor formed over a substrate, the thin film transistor including at least a channel forming region, a source region, a drain region, a gate insulating film and a gate electrode;

a first insulating film formed over the thin film transistor;

a scanning line formed over the first insulating film wherein the scanning line is connected to the gate electrode of the thin film transistor;

a signal line formed over the substrate and electrically connected to one of the source region and the drain region of the thin film transistor wherein the signal line extends across the scanning line;

a conductive layer formed on a same surface as the gate electrode wherein the signal line extends in parallel with the conductive layer and overlaps the conductive layer at least partly;

a second insulating film formed over the thin film transistor, the scanning line, the conductive layer and the signal line; and

a pixel electrode formed over the second insulating film and electrically connected to the other one of the source region and the drain region of the thin film transistor.

21. The liquid crystal display device according to claim 20 further comprising a storage capacitor including the conductive layer as an electrode of the storage capacitor.

22. The liquid crystal display device according to claim 20 wherein the gate electrode is located over the channel region.

23. The liquid crystal display device according to claim 20 wherein the conductive layer extends across the scanning line.

24. The liquid crystal display device according to claim 20 wherein the conductive layer is overlapped with the scanning line.