Precursor For Film Formation And Method For Forming Ruthenium-Containing Film

• US 20080038465A1
• Filed: 09/26/2005
• Published: 02/14/2008
• Est. Priority Date: 09/28/2004
• Status: Active Grant

• Current Assignee: L'Air Liquide Societe Anonyme Pour L'Etude et L'Exploitation Des Procedes Georges Claude (L'Air Liquide SA)
• Original Assignee: L'Air Liquide Societe Anonyme Pour L'Etude et L'Exploitation Des Procedes Georges Claude (L'Air Liquide SA)
• Inventors: Dussarrat, Christian, Gatineau, Julien, Yanagita, Kazutaka
• Granted Patent: US 7,544,389 B2
• Time in Patent Office: Days
• US Class Current: 427/255.394
• CPC Class Codes: C23C 16/06 characterised by the deposition of metallic material
• CPC Class Codes: C23C 16/40 Oxides
• CPC Class Codes: C23C 16/45519 Inert gas curtains
• CPC Class Codes: C23C 16/45553 characterized by the use of precursors specially adapted for ALD
• CPC Class Codes: H01L 21/28556 by chemical means, e.g. CVD, LPCVD, PECVD, laser CVD H01L21/28518 - H01L21/28537 and H01L21/28568 take precedence
• CPC Class Codes: H01L 21/7687 Thin films associated with contacts of capacitors
• CPC Class Codes: H01L 28/65 comprising a noble metal or a noble metal oxide, e.g. platinum (Pt), ruthenium (Ru), ruthenium dioxide (RuO2), iridium (Ir), iridium dioxide (IrO2)

Abstract

Precursor for ruthenium film deposition, comprising ruthenium tetroxide dissolved in at least one non-flammable solvent, preferably a fluorinated solvent having the general formula CxHyFzOtNu wherein: <l/>2x+2<=y+z and 2<=x<=15 and z>y and t+u>=1 (t+u preferably equal to 1) x, y, z, t and u being positive integers.

Claims

1-19. -19. (canceled)

20. A precursor for ruthenium containing film formation, comprising ruthenium tetroxide dissolved in non-flammable fluorinated solvent, having the general formula

C_xH_yF_zO_tN_u 

 

(1)

wherein;

a) 2x+2≦

y+z;

b) 2≦

x≦

15;

c) z>

y; and

d) t+u≧

1,

x, y, z, t and u being positive integers

21. The precursor of claim 20, wherein the fluorinated solvent is selected from the group comprising 3-ethoxyperfluoro(2-methylhexane) and Tris(heptafluoropropyl)amine.

22. A method for forming a ruthenium-containing film, comprising the steps of depositing a ruthenium-containing film on a substrate by introducing at least a precursor for film formation according to claim 20 into a reaction chamber that contains at least one substrate, wherein said precursor is introduced in gaseous form.

23. The method of claim 22, further comprising the step of introducing a gaseous reducing agent into the reaction chamber and thereby depositing ruthenium on at least one substrate by reacting said gaseous precursor with the gaseous reducing agent.

24. The method of claim 23, wherein the reducing agent is hydrogen.

25. The method of claim 23, wherein the pressure in the reaction chamber is maintained between 0.01 torr and 1000 torr.

26. The method of claim 23, wherein the film deposition step is carried out at a substrate temperature comprised between 50°

C. to 800°

C.

27. The method of claim 23, wherein the reducing agent and the ruthenium precursor are simultaneously introduced into the reaction chamber.

28. The method of claim 23, comprising the steps of:

a) introducing the gaseous precursor into the reaction chamber;

b) purging the reaction chamber by injecting an inert gas into it;

c) thereafter, introducing the gaseous reducing agent into the reaction chamber during a determined duration, thereafter called reducing agent pulse; and

d) purging the interior of the reaction chamber by injecting an inert gas into it,

thereby reducing the ruthenium oxide on the substrate.

29. The method of claim 28, further comprising the step of repeating the introduction step of the gaseous precursor, e.g. until the desired film thickness is achieved

30. The method of claim 28, comprising the step of maintaining the substrate temperature between 100°

C. and 600°

C.

31. The method of claim 22, comprising the steps of:

a) thermally decomposing the gaseous precursor; and

b) and thereby depositing a ruthenium oxide film on the substrate.

32. The method of claim 31, comprising the step of maintaining the total pressure in the reaction chamber between 0.01 torr and 1000 torr.

33. The method of claim 31, comprising the step of maintaining the substrate temperature above at least 150°

C.

34. The method of claim 22, further comprising the steps of:

a) introducing simultaneously or in separate pulses the gaseous precursor, a gaseous organometallic compound and an oxygen containing gas into the reaction chamber that holds the substrate; and

b) reacting said precursor, organometallic compound and said oxygen containing gas thereby depositing a ruthenate film on the surface of the substrate.

35. The method of claim 22, wherein the substrate is a silicon-based wafer for semi-conductor manufacture.

36. The method of claim 22, wherein the substrate is a ceramic-based material.

37. The method of claim 36, wherein the substrate is not a flat surface but comprises at least some curved surfaces such as bumps.

38. The method of claim 22, wherein the substrate is a ball-shaped substrate.