Method of forming thin film, substrate having thin film formed by the method, photoelectric conversion device using the substrate

• US 20080038541A1
• Filed: 04/27/2007
• Published: 02/14/2008
• Est. Priority Date: 12/03/2001
• Status: Abandoned Application

• Current Assignee: Nippon Sheet Glass Company Limited
• Original Assignee: Nippon Sheet Glass Company Limited
• Inventors: Arai, Daisuke, Otani, Tsuyoshi, Yamamoto, Toru, Fujisawa, Akira, Ichiki, Kiyotaka, Sueyoshi, Yukio
• Application Number:
  US11/796,249
• Publication Number:
  US 20080038541A1
• Time in Patent Office: Days
• US Class Current: 428/332
• CPC Class Codes: B60R 16/0207 Wire harnesses
• CPC Class Codes: C03C 17/245 by deposition from the vapour phase
• CPC Class Codes: C03C 17/3417 all coatings being oxide coatings
• CPC Class Codes: C03C 17/3452 comprising a fluoride
• CPC Class Codes: C03C 2217/211 SnO2
• CPC Class Codes: C03C 2217/241 with halides
• CPC Class Codes: C03C 2218/15 from the vapour phase
• CPC Class Codes: C23C 16/0272 Deposition of sub-layers, e.g. to promote the adhesion of the main coating
• CPC Class Codes: C23C 16/0281 of metallic sub-layers C23C16/029 takes precedence
• CPC Class Codes: C23C 16/407 of zinc, germanium, cadmium, indium, tin, thallium or bismuth
• CPC Class Codes: C23C 16/545 for coating elongated substrates
• CPC Class Codes: H01B 7/08 Flat or ribbon cables
• CPC Class Codes: H01L 31/1884 Manufacture of transparent electrodes, e.g. TCO, ITO
• CPC Class Codes: Y02E 10/50 Photovoltaic [PV] energy
• CPC Class Codes: Y10T 428/26 Web or sheet containing structurally defined element or component, the element or component having a specified physical dimension

Abstract

The present invention provides a method of forming a thin film containing a metal oxide as the main component, the film thickness of which is relatively uniform, at a high film deposition rate over a wide area and over a long time. The present invention is a method for forming a thin film containing a metal oxide as the main component on a substrate using a mixed gas stream containing a metal chloride, an oxidizing material, and hydrogen chloride, by a thermal decomposition method at a film deposition rate of 4500 nm/min. or greater, performing at least one selected from: 1) prior to mixing the metal chloride and the oxidizing material in the mixed gas stream, contacting hydrogen chloride with at least one selected from the metal chloride and the oxidizing material, and 2) forming a buffer layer in advance on a surface of the substrate on which the thin film containing a metal oxide as the main component is to be formed.

Claims

1-9. -9. (canceled)

10. A substrate having a thin film, comprising a substrate, a buffer layer formed on the substrate, and a thin film that is formed on the buffer layer and contains a metal oxide as the main component,

wherein the buffer layer has bumps on its surface of the thin film side, and the bumps have a height of 10 to 200 nm.