Method of Manufacturing Image Sensor
First Claim
1. A method of manufacturing an image sensor, the method comprising:
- forming a device isolation region in an active pixel sensor area of a semiconductor substrate and alignment keys in a scribe lane area of the semiconductor substrate, such that the depth of the alignment keys is equal to or shallower than the depth of the device isolation region;
forming a photoelectric converter in the active pixel sensor area;
polishing a rear surface of the semiconductor substrate; and
using the alignment keys to form a microlens at a position corresponding to the photoelectric converter on the polished rear surface of the semiconductor substrate.
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Abstract
A method of manufacturing an image sensor includes forming a device isolation region in an active pixel sensor area of a semiconductor substrate and alignment keys in a scribe lane area of the semiconductor substrate, such that the depth of the alignment keys is equal to or shallower than the depth of the device isolation region. The method further includes forming a photoelectric converter in the active pixel sensor area, polishing a rear surface of the semiconductor substrate and using the alignment keys to form a microlens at a position corresponding to the photoelectric converter on the polished rear surface of the semiconductor substrate.
47 Citations
19 Claims
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1. A method of manufacturing an image sensor, the method comprising:
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forming a device isolation region in an active pixel sensor area of a semiconductor substrate and alignment keys in a scribe lane area of the semiconductor substrate, such that the depth of the alignment keys is equal to or shallower than the depth of the device isolation region;
forming a photoelectric converter in the active pixel sensor area;
polishing a rear surface of the semiconductor substrate; and
using the alignment keys to form a microlens at a position corresponding to the photoelectric converter on the polished rear surface of the semiconductor substrate. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 18)
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10. A method of manufacturing an image sensor, the method comprising:
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forming a device isolation region in an active pixel sensor area of a semiconductor substrate and alignment keys in a scribe lane area of the semiconductor substrate, such that the depth of the alignment keys is equal to or shallower than the depth of the device isolation region;
forming a photoelectric converter in the active pixel sensor area;
forming a multi-layer wiring line in an interlayer insulating film formed on the active pixel sensor area;
polishing a rear surface of the semiconductor substrate;
forming a mask pattern for opening the scribe lane area on the entire polished rear surface of the semiconductor substrate;
etching the polished rear surface of the semiconductor substrate using the mask pattern to expose the alignment keys; and
using the alignment keys to form a microlens at a position corresponding to the photoelectric converter on the polished rear surface of the semiconductor substrate. - View Dependent Claims (11, 12, 13, 14, 15, 16, 19)
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17. The method of claim I 1, further comprising:
forming a color filter at the position corresponding to the photoelectric converter before forming the microlens.
Specification