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METHODS OF FORMING ALUMINUM-FREE WIRE BOND PAD AND PAD SO FORMED

  • US 20080038913A1
  • Filed: 08/10/2006
  • Published: 02/14/2008
  • Est. Priority Date: 08/10/2006
  • Status: Abandoned Application
First Claim
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1. A method of forming an aluminum-free wire bond pad, the method comprising:

  • forming an opening through a dielectric layer to a last metal of a chip;

    forming at least one first layer over the chip and over the opening, wherein the at least one first layer is selected from the group consisting of;

    tantalum nitride (TaN), titanium (Ti) and titanium nitride (TiN);

    removing the at least one first layer outside of the opening;

    forming a passivation mask layer over the chip including a passivation mask opening to the at least one first layer over the last metal;

    forming at least one second layer over the chip and over the passivation mask opening, wherein the at least one second layer is selected from the group consisting of;

    titanium tungsten (TiW), copper (Cu) and titanium (Ti); and

    forming at least one third layer and then a gold (Au) layer over at least a part of the at least one second layer, wherein the at least one third layer is selected from the group consisting of;

    nickel (Ni), copper (Cu), ruthenium (Ru) and nickel-platinum (NiPt).

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