METHODS OF FORMING ALUMINUM-FREE WIRE BOND PAD AND PAD SO FORMED
First Claim
1. A method of forming an aluminum-free wire bond pad, the method comprising:
- forming an opening through a dielectric layer to a last metal of a chip;
forming at least one first layer over the chip and over the opening, wherein the at least one first layer is selected from the group consisting of;
tantalum nitride (TaN), titanium (Ti) and titanium nitride (TiN);
removing the at least one first layer outside of the opening;
forming a passivation mask layer over the chip including a passivation mask opening to the at least one first layer over the last metal;
forming at least one second layer over the chip and over the passivation mask opening, wherein the at least one second layer is selected from the group consisting of;
titanium tungsten (TiW), copper (Cu) and titanium (Ti); and
forming at least one third layer and then a gold (Au) layer over at least a part of the at least one second layer, wherein the at least one third layer is selected from the group consisting of;
nickel (Ni), copper (Cu), ruthenium (Ru) and nickel-platinum (NiPt).
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Accused Products
Abstract
Methods of forming an aluminum-free wire bond pad and the pad so formed are disclosed. In one embodiment, the method includes forming an opening through a dielectric layer to a last metal of a chip; forming a tantalum nitride (TaN) layer over the chip and over the opening; removing the tantalum nitride (TaN) layer outside of the opening; forming a passivation mask layer over the chip including a passivation mask opening over the last metal; forming a titanium tungsten (TiW) layer and a copper (Cu) layer over the chip; forming a mask layer over the chip including a mask opening to the copper (Cu) layer over the last metal; forming a nickel (Ni) layer and a copper (Cu) layer and then a gold (Au) layer in the mask opening; and removing the mask.
14 Citations
20 Claims
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1. A method of forming an aluminum-free wire bond pad, the method comprising:
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forming an opening through a dielectric layer to a last metal of a chip; forming at least one first layer over the chip and over the opening, wherein the at least one first layer is selected from the group consisting of;
tantalum nitride (TaN), titanium (Ti) and titanium nitride (TiN);removing the at least one first layer outside of the opening; forming a passivation mask layer over the chip including a passivation mask opening to the at least one first layer over the last metal; forming at least one second layer over the chip and over the passivation mask opening, wherein the at least one second layer is selected from the group consisting of;
titanium tungsten (TiW), copper (Cu) and titanium (Ti); andforming at least one third layer and then a gold (Au) layer over at least a part of the at least one second layer, wherein the at least one third layer is selected from the group consisting of;
nickel (Ni), copper (Cu), ruthenium (Ru) and nickel-platinum (NiPt). - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. An aluminum-free wire bond pad comprising:
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an opening to a last metal of a chip; at least one first layer in the opening coupled to the last metal, wherein the at least one first layer is selected from the group consisting of; tantalum nitride (TaN), titanium (Ti) and titanium nitride (TiN); at least one second layer over the at least one first layer in the opening, wherein the at least one second layer is selected from the group consisting of;
titanium tungsten (TiW), copper (Cu) and titanium (Ti);at least one third layer over the at least one second layer in the opening, wherein the at least one third layer is selected from the group consisting of;
nickel (Ni), copper (Cu), ruthenium (Ru) and nickel-platinum (NiPt); anda gold (Au) layer over the at least one third layer. - View Dependent Claims (12, 13, 14, 15, 16, 17)
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18. A method of forming an aluminum-free wire bond pad, the method comprising:
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forming an opening through a dielectric layer to a last metal of a chip; forming a tantalum nitride (TaN) layer over the chip and over the opening; removing the tantalum nitride (TaN) layer outside of the opening; forming a passivation mask layer over the chip including a passivation mask opening over the last metal; forming a titanium tungsten (TiW) layer and a copper (Cu) layer over the chip; forming a mask layer over the chip including a mask opening to the copper (Cu) layer over the last metal; forming a nickel (Ni) layer and a copper (Cu) layer and then a gold (Au) layer in the mask opening; and removing the mask layer. - View Dependent Claims (19, 20)
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Specification