Etch-stop layer and method of use

• US 20080038922A1
• Filed: 08/10/2006
• Published: 02/14/2008
• Est. Priority Date: 08/10/2006
• Status: Abandoned Application

• Current Assignee: Avago Technologies Wireless IP Singapore Pte Limited (Broadcom, Inc.)
• Original Assignee: Avago Technologies Wireless IP Singapore Pte Limited (Broadcom, Inc.)
• Inventors: Fazzio, R. Shane, Lamers, Kristina L.
• Application Number:
  US11/502,277
• Publication Number:
  US 20080038922A1
• Time in Patent Office: Days
• US Class Current: 438/694
• CPC Class Codes: B81C 1/00595 Control etch selectivity
• CPC Class Codes: B81C 2201/014 by depositing an etch stop layer, e.g. silicon nitride, silicon oxide, metal

Abstract

An etch-stop layer and method of use is disclosed.

Claims

1. A method of fabricating features in a substrate, the method comprising:

providing an etch-stop layer over a first side of the substrate, the etch-stop layer comprising a photoimagable epoxy; and

etching the substrate.

2. A method as claimed in claim 1, further comprising, before the etching, patterning an etch-mask over a second side of the substrate.

3. A method as claimed in claim 2, further comprising not providing a photoresist layer prior to the patterning.

4. A method as claimed in claim 1, wherein the etch-stop layer has a thickness in the range of approximately 2.0 μ

m and approximately 10.0 μ

m.

5. A method as claimed in claim 1, wherein the etch-stop layer has a thickness in the range of approximately 2.0 μ

m and approximately 50.0 μ

m.

6. A method as claimed in claim 1, wherein the substrate comprises a material chosen from the group consisting of:

silicon, gallium arsenide, indium phosphide, silicon germanium, silicon-on-insulator and glass.

7. A method as claimed in claim 1, further comprising:

spin-coating the etch-stop layer over the first side of the substrate; and

, before the etching,

forming a patterned layer over the second side of the substrate.

8. A method as claimed in claim 7, wherein the patterned layer is a hard mask.

9. A method as claimed in claim 8, wherein the hard-mask is one of silicon dioxide or silicon nitride.

10. A method as claimed in claim 1, wherein the photoimagable epoxy further comprises an epoxyfunctional resin adapted for curing by an action of a cation-producing photoinitiator.

11. A method as claimed in claim 7, wherein the patterned layer comprises another layer of photoimagable epoxy.

12. A method as claimed in claim 11, wherein the other patterned layer of photoimagable epoxy further comprises an epoxyfunctional resin adapted for curing by an action of a cation-producing photoinitiator.

13. A method as claimed in claim 1, further comprising patterning the etch-stop layer without providing a photoresist over the etch-stop layer.

14. An apparatus, comprising:

a substrate;

an opening in the substrate; and

an etch-stop layer disposed over the opening, wherein the etch-stop layer comprises a photoimagable epoxy.

15. An apparatus as claimed in claim 14, wherein the opening is a microfluidic channel and the etch-stop layer is a sealing layer.

16. An apparatus as claimed in claim 14, wherein the photoimagable epoxy further comprises an epoxyfunctional resin adapted for curing by an action of a cation-producing photoinitiator.

17. An apparatus as claimed in claim 14, wherein the etch-stop layer has a thickness in the range of approximately 2.0 μ

m and approximately 10.0 μ

m.

18. An apparatus as claimed in claim 14, wherein the etch-stop layer has a thickness in the range of approximately 2.0 μ

m and approximately 50.0 μ

m.

19. An apparatus as claimed in claim 14, wherein the substrate comprises a material chosen from the group consisting of:

silicon, gallium arsenide, indium phosphide, silicon germanium, silicon-on-insulator and glass.