METHOD OF DRY ETCHING OXIDE SEMICONDUCTOR FILM

• US 20080038929A1
• Filed: 07/10/2007
• Published: 02/14/2008
• Est. Priority Date: 08/09/2006
• Status: Active Grant

• Current Assignee: Canon Kabushiki Kaisha (Canon Inc.)
• Original Assignee: Canon Kabushiki Kaisha (Canon Inc.)
• Inventors: Chang, Chienliu
• Granted Patent: US 7,767,106 B2
• Time in Patent Office: Days
• US Class Current: 438/722
• CPC Class Codes: H01L 31/022466 made of transparent conductive layers, e.g. TCO, ITO layers
• CPC Class Codes: H01L 31/022483 composed of zinc oxide [ZnO]
• CPC Class Codes: H01L 31/1884 Manufacture of transparent electrodes, e.g. TCO, ITO
• CPC Class Codes: Y02E 10/50 Photovoltaic [PV] energy

Abstract

Provided is a dry etching method for an oxide semiconductor film containing at least In, Ga, and Zn, which includes etching an oxide semiconductor film in a gas atmosphere containing a halogen-based gas.

Claims

1. A method of dry etching an oxide semiconductor film including In, Ga, and Zn, which comprises performing etching in a gas atmosphere containing a halogen-based gas.

2. The dry etching method according to claim 1, wherein a reaction pressure during the etching is within a range of 0.6 Pa or more and 2.4 Pa or less.

3. The dry etching method according to claim 1, wherein a bias RF power is applied at a density of 0.02 W/cm² or more to a substrate side during the etching.

4. The dry etching method according to claim 1, wherein the etching is performed while covering a part of a surface of the oxide semiconductor film with an etching mask comprising a material selected from the group consisting of an organic photoresist, silicon oxide, amorphous silicon, and silicon nitride.

5. The dry etching method according to claim 4, wherein the etching mask has a thickness which is equal to or larger than a thickness of the oxide semiconductor film.

6. The dry etching method according to claim 1, wherein a surface temperature the oxide semiconductor film during the etching is maintained at a temperature within a range of 0°

C. or more and less than 200°

C.

7. The dry etching method according to claim 1, wherein the oxide semiconductor film has an electron carrier concentration of less than 10¹⁸/cm³.

8. The dry etching method according to claim 1, wherein the oxide semiconductor film has a thickness within a range of 5 nm or more and 400 nm or less.