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METHOD OF DRY ETCHING OXIDE SEMICONDUCTOR FILM

  • US 20080038929A1
  • Filed: 07/10/2007
  • Published: 02/14/2008
  • Est. Priority Date: 08/09/2006
  • Status: Active Grant
First Claim
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1. A method of dry etching an oxide semiconductor film including In, Ga, and Zn, which comprises performing etching in a gas atmosphere containing a halogen-based gas.

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