MATERIALS AND METHODS OF FORMING CONTROLLED VOID
First Claim
1. A process for forming an air gap, the process comprising:
- (a) providing a substrate;
(b) depositing a sacrificial layer with at least one organic precursor onto the substrate;
(c) depositing a composite layer with a porogen that is the at least one organic precursor in (b) and at least one silica-containing precursor or organosilicate glass (OSG) precursor onto the substrate;
(d) applying energy to the substrate having the sacrificial layer and the composite layer to remove both the sacrificial layer to provide air gaps and the porogen to form a porous layer;
(e) optionally, patterning a layer selected from the group consisting of the sacrificial layer, the composite layer, the porous layer and combinations thereof; and
(f) optionally, repeating steps (a)-(e) at least one time for making multilevel structures;
Wherein depositing steps (b) and (c) are via a process selected from the group consisting of chemical vapor depositions (CVD) and plasma enhanced chemical vapor depositions (PECVD).
4 Assignments
0 Petitions
Accused Products
Abstract
The present invention is a process for forming an air gap within a substrate, the process comprising: providing a substrate; depositing a sacrificial material by deposition of at least one sacrificial material precursor; depositing a composite layer; removale of the porogen material in the composite layer to form a porous layer and contacting the layered substrate with a removal media to substantially remove the sacrificial material and provide the air gaps within the substrate; wherein the at least one sacrificial material precursor is selected from the group consisting of: an organic porogen; silicon, and a polar solvent soluble metal oxide and mixtures thereof.
-
Citations
70 Claims
-
1. A process for forming an air gap, the process comprising:
-
(a) providing a substrate;
(b) depositing a sacrificial layer with at least one organic precursor onto the substrate;
(c) depositing a composite layer with a porogen that is the at least one organic precursor in (b) and at least one silica-containing precursor or organosilicate glass (OSG) precursor onto the substrate;
(d) applying energy to the substrate having the sacrificial layer and the composite layer to remove both the sacrificial layer to provide air gaps and the porogen to form a porous layer;
(e) optionally, patterning a layer selected from the group consisting of the sacrificial layer, the composite layer, the porous layer and combinations thereof; and
(f) optionally, repeating steps (a)-(e) at least one time for making multilevel structures;
Wherein depositing steps (b) and (c) are via a process selected from the group consisting of chemical vapor depositions (CVD) and plasma enhanced chemical vapor depositions (PECVD). - View Dependent Claims (2, 3, 8, 9, 10, 14)
-
-
4. (canceled)
-
5. (canceled)
-
6. (canceled)
-
7. (canceled)
-
11. (canceled)
-
12. (canceled)
-
13. (canceled)
-
15. (canceled)
-
16. (canceled)
-
17. (canceled)
-
18. (canceled)
-
19. A process for forming an air gap, the process comprising:
-
(a) providing a substrate, optionally with an etch stop layer to protect bare layer of the substrate;
(b) depositing a sacrificial layer comprising silicon;
(c) depositing a composite layer with a porogen and at least one silica-containing precursor or organosilicate glass (OSG) precursor;
(d) applying energy to the substrate having the sacrificial layer and the composite layer to remove the porogen to form a porous layer;
(e) contacting the substrate having the sacrificial layer and the porous layer with a fluorine containing reagent under reduced pressure capable of diffusing through the porous layer to selectively remove the sacrificial layer to form air gaps;
(f) optionally, patterning a layer selected from the group consisting of the sacrificial layer, the composite layer, the porous layer and combinations thereof; and
(g) optionally, repeating steps (a)-(f) at least one time for making multilevel structures;
wherein depositing step (b) is via a process selected from the group consisting of a chemical vapor deposition (CVD) and a plasma enhanced chemical vapor deposition (PECVD); and
depositing step (c) is via a process selected from the group consisting of chemical vapor deposition (CVD), spin-on coating, dip coating and mist deposition. - View Dependent Claims (20, 21, 30, 31, 35)
-
-
22. (canceled)
-
23. (canceled)
-
24. (canceled)
-
25. (canceled)
-
26. (canceled)
-
27. (canceled)
-
28. (canceled)
-
29. (canceled)
-
32. (canceled)
-
33. (canceled)
-
34. (canceled)
-
36. (canceled)
-
37. (canceled)
-
38. (canceled)
-
39. (canceled)
-
40. A process for forming an air gap, the process comprising:
-
(a) providing a substrate;
(b) depositing a polar solvent soluble metal oxide sacrificial layer with a metal precursor;
(c) depositing a composite layer with a porogen and at least one silica-containing precursor or organosilicate glass (OSG) precursor;
(d) applying energy to the substrate having the sacrificial layer and the composite layer to remove the porogen to form a porous layer;
n(e) contacting the substrate having the sacrificial layer and the porous layer with a polar solvent, optionally with a surfactant, capable of diffusing through the porous layer to remove the sacrificial layer to form air gaps;
(f) optimally, patterning a layer selected from the group consisting of the sacrificial layer, the composite layer, the porous layer and combinations thereof; and
(g) optionally, repeating steps (a)-(f) at least one time for making multilevel structures;
wherein the deposition of a polar solvent soluble metal oxide sacrificial layer in (b) and the deposition of a composite layer in (d) are via a process selected from the group consisting of a chemical vapor deposition, spin-on coating, dip-coating and mist deposition - View Dependent Claims (42, 44, 45, 48, 49, 53)
-
-
41. (canceled)
-
43. (canceled)
-
46. (canceled)
-
47. (canceled)
-
50. (canceled)
-
51. (canceled)
-
52. (canceled)
-
54. (canceled)
-
55. (canceled)
-
56. (canceled)
-
57. (canceled)
-
58. A process for forming an air gap, the process comprising:
-
(a) providing a substrate;
(b) depositing a polar solvent soluble metal oxide sacrificial layer with a metal precursor;
(c) depositing a composite layer with a porogen that is the polar solvent soluble metal oxide in (b) and at least one silica-containing precursor or organosilicate glass (OSG) precursor;
(d) contacting the substrate having the sacrificial layer and the composite layer with a polar solvent, optionally with a surfactant to facilitate the diffusion of the polar solvent through the sacrificial layer and the composite layer, to remove the porogen to form a porous layer and to remove the sacrificial layer to form air gaps. (e) optionally, patterning a layer selected from the group consisting of the sacrificial layer, the composite layer, the porous layer and combinations thereof; and
(f) optionally, steps (a)-(e) at least one time for making multilevel structures;
wherein the depositing steps (b) and (d) are processes selected from the group consisting of a chemical vapor deposition (CVD), spin- or coating, dip-coating and mist deposition. - View Dependent Claims (60, 62, 63, 66)
-
-
59. (canceled)
-
61. (canceled)
-
64. (canceled)
-
65. (canceled)
-
67. (canceled)
-
68. (canceled)
-
69. (canceled)
-
70. (canceled)
Specification