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MATERIALS AND METHODS OF FORMING CONTROLLED VOID

  • US 20080038934A1
  • Filed: 03/29/2007
  • Published: 02/14/2008
  • Est. Priority Date: 04/18/2006
  • Status: Active Grant
First Claim
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1. A process for forming an air gap, the process comprising:

  • (a) providing a substrate;

    (b) depositing a sacrificial layer with at least one organic precursor onto the substrate;

    (c) depositing a composite layer with a porogen that is the at least one organic precursor in (b) and at least one silica-containing precursor or organosilicate glass (OSG) precursor onto the substrate;

    (d) applying energy to the substrate having the sacrificial layer and the composite layer to remove both the sacrificial layer to provide air gaps and the porogen to form a porous layer;

    (e) optionally, patterning a layer selected from the group consisting of the sacrificial layer, the composite layer, the porous layer and combinations thereof; and

    (f) optionally, repeating steps (a)-(e) at least one time for making multilevel structures;

    Wherein depositing steps (b) and (c) are via a process selected from the group consisting of chemical vapor depositions (CVD) and plasma enhanced chemical vapor depositions (PECVD).

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