SPIN-ON PROTECTIVE COATINGS FOR WET-ETCH PROCESSING OF MICROELECTRONIC SUBSTRATES
First Claim
1. A method of forming a microelectronic structure, said method comprising contacting a microelectronic structure with an etchant selected from the group consisting of basic etchants and acidic etchants, said microelectronic stricture comprising:
- a microelectronic substrate having a surface;
a primer layer adjacent said substrate surface; and
a first protective layer adjacent said primer layer, said first protective layer including a first polymer comprising recurring monomers having the respective formulas wherein;
each R1 is individually selected from the group consisting of hydrogen and C1-C8 alkyls; and
each R2 is individually selected from the group consisting of hydrogen, C1-C8 alkyls, and C1-C8 alkoxys.
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Abstract
New protective coating layers for use in wet etch processes during the production of semiconductor and MEMS devices are provided. The layers include a primer layer, a first protective layer, and an optional second protective layer. The primer layer preferably comprises an organo silane compound in a solvent system. The first protective layer includes thermoplastic copolymers prepared from styrene, acrylonitrile, and optionally other addition-polymerizable monomers such as (meth)acrylate monomers, vinylbenzyl chloride, and diesters of maleic acid or fumaric acid. The second protective layer comprises a highly halogenated polymer such as a chlorinated polymer which may or may not be crosslinked upon heating.
41 Citations
10 Claims
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1. A method of forming a microelectronic structure, said method comprising contacting a microelectronic structure with an etchant selected from the group consisting of basic etchants and acidic etchants, said microelectronic stricture comprising:
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a microelectronic substrate having a surface;
a primer layer adjacent said substrate surface; and
a first protective layer adjacent said primer layer, said first protective layer including a first polymer comprising recurring monomers having the respective formulas wherein;
each R1 is individually selected from the group consisting of hydrogen and C1-C8 alkyls; and
each R2 is individually selected from the group consisting of hydrogen, C1-C8 alkyls, and C1-C8 alkoxys. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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Specification