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SPIN-ON PROTECTIVE COATINGS FOR WET-ETCH PROCESSING OF MICROELECTRONIC SUBSTRATES

  • US 20080041815A1
  • Filed: 09/17/2007
  • Published: 02/21/2008
  • Est. Priority Date: 01/16/2004
  • Status: Active Grant
First Claim
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1. A method of forming a microelectronic structure, said method comprising contacting a microelectronic structure with an etchant selected from the group consisting of basic etchants and acidic etchants, said microelectronic stricture comprising:

  • a microelectronic substrate having a surface;

    a primer layer adjacent said substrate surface; and

    a first protective layer adjacent said primer layer, said first protective layer including a first polymer comprising recurring monomers having the respective formulas wherein;

    each R1 is individually selected from the group consisting of hydrogen and C1-C8 alkyls; and

    each R2 is individually selected from the group consisting of hydrogen, C1-C8 alkyls, and C1-C8 alkoxys.

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