High power light emitting diode package and method of producing the same

• US 20080042151A1
• Filed: 06/13/2007
• Published: 02/21/2008
• Est. Priority Date: 07/10/2006
• Status: Active Grant

• Current Assignee: Samsung Electronics Co. Ltd.
• Original Assignee: Samsung Electro-Mechanics Co., Ltd. (Samsung Group)
• Inventors: Park, Jung Kyu, Oh, Kyung Seob, Roh, Jae Ky, Choi, Seung Hwan, Baek, Jong Hwan
• Granted Patent: US 7,598,528 B2
• Time in Patent Office: Days
• US Class Current: 257/88
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/48137 the bodies being arranged next to each other, e.g. on a common substrate
• CPC Class Codes: H01L 2224/48247 connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 2224/48465 the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
• CPC Class Codes: H01L 2224/48471 the other connecting portion not on the bonding area being a ball bond, i.e. wedge-to-ball, reverse stitch
• CPC Class Codes: H01L 2224/49113 the connectors connecting different bonding areas on the semiconductor or solid-state body to a common bonding area outside the body, e.g. converging wires
• CPC Class Codes: H01L 25/0753 the devices being arranged next to each other
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/01322 Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
• CPC Class Codes: H01L 2924/3025 Electromagnetic shielding
• CPC Class Codes: H01L 33/46 Reflective coating, e.g. dielectric Bragg reflector
• CPC Class Codes: H01L 33/486 adapted for surface mounting
• CPC Class Codes: H01L 33/60 Reflective elements

Abstract

A high power Light Emitting Diode (LED) package and a method of producing the same. The high power LED package according to the present invention includes a plurality of light emitting diode chips, a first lead frame with the light emitting diode chips mounted thereon, and a second lead frame disposed at a predetermined interval from the first lead frame. The LED package also includes a package body fixing the first and second lead frames and bonding wires for electrically connecting the plurality of LED chips. The package body includes at least one first reflecting part separately surrounding each of the plurality of LED chips with upward-inclined inner side walls thereof and a second reflecting part surrounding the entire plurality of LED chips with an upward-inclined inner side wall thereof.

Claims

1. A high power light emitting diode package comprising:

a plurality of light emitting diode chips;

a first lead frame with the plurality of light emitting diode chips mounted thereon and a second lead frame disposed apart at a predetermined interval from the first lead frame;

a package body fixing the first and second lead frames; and

bonding wires for electrically connecting the plurality of light emitting diode chips,

wherein the package body comprises at least one first reflecting part separately surrounding each of the plurality of light emitting diode chips with upward-inclined inner side walls thereof, and a second reflecting part surrounding the entire plurality of light emitting diode chips with an upward-inclined inner side wall thereof.

2. The high power light emitting diode package according to claim 1, wherein the first lead frame comprises a planar base and an extension extending from an edge of the base.

3. The high power light emitting diode package according to claim 2, wherein the package body exposes a portion of undersurface of the base of the first lead frame.

4. The high power light emitting diode package according to claim 1, further comprising a resin encapsulant for encapsulating the plurality of light emitting diode chips.

5. The high power light emitting diode package according to claim 4, wherein the resin encapsulant comprises one selected from the group consisting of a silicone-based resin, an epoxy resin, a urethane-based resin and mixtures thereof.

6. The high power light emitting diode package according to claim 4, wherein the resin encapsulant comprises phosphor.

7. The high power light emitting diode package according to claim 1, wherein the bonding wires extend over upper parts of the first reflecting part to electrically connect the adjacent ones of the light emitting diode chips.

8. A method of producing a high power light emitting diode package comprising:

preparing a first lead frame and a second lead frame;

injection-molding a resin to surround the first and second lead frames to form a package body fixing the first and second lead frames, the package body comprising at least one first reflecting part surrounding predetermined portions on the first lead frame with upward-inclined inner side walls thereof, and a second reflecting part surrounding the at least one first reflecting part with an upward-inclined inner side wall thereof;

mounting a plurality of light emitting diode chips on the first lead frame so as to be surrounded by the first reflecting part;

electrically connecting the plurality of light emitting diode chips with bonding wires; and

encapsulating the plurality of light emitting diode chips with a resin encapsulant.

9. The method according to claim 8, wherein the resin encapsulant comprises one selected from the group consisting of a silicone-based resin, an epoxy resin, a urethane-based resin, and mixtures thereof.

10. The method according to claim 8, wherein the resin encapsulant comprises phosphor.

11. The method according to claim 8, wherein the electrically connecting the plurality of light emitting diode chips with bonding wires comprises extending bonding wires over upper parts of the first reflecting part to electrically connect the adjacent ones of the light emitting diode chips.

12. The method according to claim 8, wherein the first lead frame comprises a planar base and an extension extending from an edge of the base.

13. The method according to claim 12, wherein the forming a package body comprises forming the base of the first lead frame such that a portion of undersurface of the base of the first lead frame is exposed.