NONVOLATILE SEMICONDUCTOR MEMORY
First Claim
1. A nonvolatile semiconductor memory comprising:
- a memory cell comprising;
a semiconductor substrate;
a first insulating layer on the semiconductor substrate;
a floating gate on the first insulating layer;
a second insulating layer on the floating gate; and
a control gate electrode on the second insulating layer,wherein the floating gate is comprised a first conductive layer which is contact with the first insulating layer, a second conductive layer which is contact with the second insulating layer, and a semiconductor layer between the first and second conductive layers, and each of the first and second conductive layer is a metal layer or a silicide layer.
1 Assignment
0 Petitions
Accused Products
Abstract
A nonvolatile semiconductor memory includes a memory cell including, a semiconductor substrate, a first insulating layer on the semiconductor substrate, a floating gate on the first insulating layer, a second insulating layer on the floating gate, and a control gate electrode on the second insulating layer, wherein the floating gate is comprised a first conductive layer which is contact with the first insulating layer, a second conductive layer which is contact with the second insulating layer, and a semiconductor layer between the first and second conductive layers, and each of the first and second conductive layer is a metal layer or a silicide layer.
-
Citations
18 Claims
-
1. A nonvolatile semiconductor memory comprising:
-
a memory cell comprising; a semiconductor substrate; a first insulating layer on the semiconductor substrate; a floating gate on the first insulating layer; a second insulating layer on the floating gate; and a control gate electrode on the second insulating layer, wherein the floating gate is comprised a first conductive layer which is contact with the first insulating layer, a second conductive layer which is contact with the second insulating layer, and a semiconductor layer between the first and second conductive layers, and each of the first and second conductive layer is a metal layer or a silicide layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 15, 16, 17)
-
-
10. A nonvolatile semiconductor memory comprising:
-
a memory cell comprising; a semiconductor substrate; a first insulating layer on the semiconductor substrate; a floating gate on the first insulating layer; a second insulating layer on the floating gate; and a control gate electrode on the second insulating layer, wherein the floating gate is comprised a first conductive layer which is contact with the first insulating layer, a second conductive layer which is contact with the second insulating layer, and a semiconductor layer having a shape in which a center part is constricted and arranged between the first and second conductive layers, and each of the first and second conductive layer is metal layer or silicide layer. - View Dependent Claims (11, 12, 13, 14, 18)
-
Specification