MICRO-ELECTROMECHANICAL SYSTEMS DEVICE AND MANUFACTURING METHOD THEREOF

• US 20080042260A1
• Filed: 07/06/2007
• Published: 02/21/2008
• Est. Priority Date: 08/21/2006
• Status: Abandoned Application

• Current Assignee: Hitachi, Ltd.
• Original Assignee: Hitachi, Ltd.
• Inventors: Fukuda, Hiroshi, JEONG, Heewon
• Application Number:
  US11/774,526
• Publication Number:
  US 20080042260A1
• Time in Patent Office: Days
• US Class Current: 257/704
• CPC Class Codes: B81B 7/007 Interconnections between the MEMS and external electrical signals
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2924/00012 Relevant to the scope of the group, the symbol of which is combined with the symbol of this group
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/16235 Connecting to a semiconductor or solid-state bodies, i.e. cap-to-chip
• CPC Class Codes: H01L 2924/181 Encapsulation

Abstract

A method of sealing and leading out an electrode for an MEMS device such as an angular velocity sensor, an acceleration sensor, or a combined sensor is provided. A fixed portion is formed within a device forming region surrounded with a base support, a beam is connected to the fixed portion, and a movable portion is connected to the beam. Further, a detection portion for detecting the displacement of the movable portion is disposed within the device forming region. An interconnection is connected to the movable portion and the detection portion, and the interconnection extends from the hermetically sealed device forming region to the external region at the outside. The interconnection penetrates the base support and is connected with the terminal. A hole is formed between the interconnection and the base support, and an insulating film is formed in the hole. The interconnection and the base support are insulated by an insulating film buried in the hole.

Claims

1. A micro-electromechanical systems device including:

(a) a semiconductor substrate,

(b) a base support fixed to the semiconductor substrate and formed so as to surround a predetermined region,

(c) a fixed portion fixed to the semiconductor substrate and formed within the predetermined region,

(d) a beam connected to the fixed portion and formed within the predetermined region,

(e) a movable portion connected to the beam and suspended in the space within the predetermined region,

(f) a terminal portion surrounded with the base support and formed to the outside of the predetermined region,

(g) an interconnection for connecting the movable portion and the terminal portion while penetrating the base support,

(h) a base formed above the base support and the interconnection and formed so as to surround the predetermined region, and

(i) a cap formed on the base and covering the predetermined region, in which an insulating film is formed between the base support and the interconnection and between the interconnection and the base.

2. The micro-electromechanical systems device according to claim 1, wherein

the insulating film is formed also between the base support and the base.

3. The micro-electromechanical systems device according to claim 1, wherein

the base support, the fixed portion, the beam, and the movable portion are formed by fabricating an identical conductor layer.

4. The micro-electromechanical systems device according to claim 1, wherein

the semiconductor substrate comprises a support substrate, an intermediate insulative layer formed on the support substrate, and a conductor layer formed on the intermediate insulative layer.

5. The micro-electromechanical systems device according to claim 4, wherein

the conductor layer is formed of a polysilicon film or a metal film.

6. The micro-electromechanical systems device according to claim 4, wherein

the base support, the fixed portion, the beam and the movable portion are formed by fabricating the conductor layer.

7. The micro-electromechanical systems device according to claim 1, wherein

the cap extends as far as a portion above the terminal portion and has an opening above the terminal portion.

8. The micro-electromechanical systems device according to claim 7, wherein

the terminal portion is present in plurality, and the openings formed to the cap are formed so as to open the portions above the region including the plural terminal portions.

9. The micro-electromechanical systems device according to claim 1, wherein

the cap is formed of one of a glass substrate, semiconductor substrate, or metal substrate.

10. The micro-electromechanical systems device according to claim 1, wherein

the base surrounds the predetermined region and extends from the predetermined region to the outside.

11. The micro-electromechanical systems device according to claim 10, wherein

an electrode portion for anodic bonding is formed to a portion of the base that extends from the predetermined region to the outside, the cap is formed being extended as far as the portion above the electrode portion for anodic bonding, and an opening is formed to the cap above the electrode portion for anodic bonding.

12. The micro-electromechanical systems device according to claim 1, wherein

the predetermined region is hermetically sealed.

13. A method of manufacturing a micro-electromechanical systems device including the steps of:

(a) providing a semiconductor substrate containing a support substrate, an intermediate insulative layer formed on the support substrate, and a conductor layer formed on the intermediate insulative layer,

(b) forming a hole reaching the intermediate insulative layer in the conductor layer,

(c) burying a first insulating film in the hole,

(d) forming a first conductor film on the conductor layer,

(e) patterning the first conductor film thereby forming a terminal portion to the outside of a predetermined region,

(f) forming a second insulating film on the conductor layer,

(g) forming a second conductor film on the second insulating film,

(h) patterning the second insulating film and the second conductor film thereby forming the predetermined region and a base for opening the terminal portion,

(i) patterning the conductor layer exposed to the predetermined region and the terminal portion, thereby forming a base support surrounding the predetermined portion and formed with the base at an upper portion thereof by way of the second insulating film, forming a fixed portion within the predetermined region, and further forming a beam connected to the fixed portion and formed in the predetermined region, a movable portion connected to the beam and formed within the predetermined region, and an interconnection for connecting the movable portion and the terminal portion, in which the first insulating film is formed between the interconnection penetrating the base support and the base support, and the second insulating film is formed between the interconnection penetrating the base support and the base,

(j) removing the intermediate insulative layer formed in the layer below the beam and the movable portion thereby suspending the movable portion in the space within the predetermined region, and

(k) bonding the base and the cap to seal the predetermined region.

15. The method of manufacturing a micro-electromechanical systems device according to claim 13, wherein

the cap has an opening for opening a region above the terminal portion formed to the outside of the predetermined region.

16. The method of manufacturing a micro-electromechanical systems device according to claim 15, wherein

the opening in the cap opens the plural terminal portions collectively.

17. The method of manufacturing a micro-electromechanical systems device according to claim 13, wherein

the second conductor film is a polysilicon film.

18. The method of manufacturing a micro-electromechanical systems device according to claim 17, wherein

the cap is a glass substrate, and the base comprising the polysilicon film and the cap are bonded by anodic bonding.

19. The method of manufacturing a micro-electromechanical systems device according to claim 17, wherein

the cap is a silicon substrate and the base comprising the polysilicon film and the cap are bonded by normal temperature bonding.

20. The method of manufacturing a micro-electromechanical systems device according to claim 13, wherein

the step (c) is conducted by depositing the first insulating film using a chemical vapor deposition method.

14. A method of manufacturing a micro-electromechanical systems device including the steps of:

(a) providing a semiconductor substrate containing a support substrate, an intermediate insulative layer formed on the support substrate and a conductor layer formed on the intermediate insulative layer,

(b) patterning the conductor layer thereby forming a base support surrounding a predetermined region, a fixed portion formed within the predetermined region, a beam connected to the fixed portion and formed within the predetermined region, a movable portion connected to the beam and formed within the predetermined region and an interconnection extending from the predetermined region to the outside penetrating the base support,

(c) forming a third insulative layer so as to bury the patterned conductor layer, in which the third insulating film is formed to the periphery of the interconnection penetrating the base support,

(d) forming a terminal portion on the conductor film at the outside of the predetermined region and connecting the terminal portion and the interconnection,

(e) forming a base on the base support by way of the third insulating film,

(f) removing the third insulating film within the predetermined region and the intermediate insulating film formed in the layer below the beam and the movable portion, thereby suspending the movable portion in the space within the predetermined region, and

(g) bonding the base and the cap thereby sealing the predetermined region.