Semiconductor chip structure

• US 20080042280A1
• Filed: 06/28/2007
• Published: 02/21/2008
• Est. Priority Date: 06/28/2006
• Status: Active Grant

• Current Assignee: Qualcomm, Inc.
• Original Assignee: Megica Corporation (Chipbond Technology Corporation)
• Inventors: Lin, Mou-Shiung, Lee, Jin-Yuan
• Granted Patent: US 8,421,227 B2
• Time in Patent Office: Days
• US Class Current: 257/751
• CPC Class Codes: H01L 2224/02166 Collar structures
• CPC Class Codes: H01L 2224/023 Redistribution layers [RDL] for bonding areas
• CPC Class Codes: H01L 2224/0401 Bonding areas specifically adapted for bump connectors, e.g. under bump metallisation [UBM]
• CPC Class Codes: H01L 2224/04042 Bonding areas specifically adapted for wire connectors, e.g. wirebond pads
• CPC Class Codes: H01L 2224/04073 Bonding areas specifically adapted for connectors of different types
• CPC Class Codes: H01L 2224/05084 Four-layer arrangements
• CPC Class Codes: H01L 2224/05552 in top view
• CPC Class Codes: H01L 2224/05553 being rectangular
• CPC Class Codes: H01L 2224/05568 the whole external layer protruding from the surface
• CPC Class Codes: H01L 2224/05644 Gold [Au] as principal constituent
• CPC Class Codes: H01L 2224/05647 Copper [Cu] as principal constituent
• CPC Class Codes: H01L 2224/05655 Nickel [Ni] as principal constituent
• CPC Class Codes: H01L 2224/05664 Palladium [Pd] as principal constituent
• CPC Class Codes: H01L 2224/05669 Platinum [Pt] as principal constituent
• CPC Class Codes: H01L 2224/1147 using a lift-off mask
• CPC Class Codes: H01L 2224/1308 being stacked
• CPC Class Codes: H01L 2224/13099 Material
• CPC Class Codes: H01L 2224/13124 Aluminium [Al] as principal constituent
• CPC Class Codes: H01L 2224/13139 Silver [Ag] as principal constituent
• CPC Class Codes: H01L 2224/13144 Gold [Au] as principal constituent
• CPC Class Codes: H01L 2224/13147 : Copper [Cu] as principal constituent
• CPC Class Codes: H01L 2224/13155 : Nickel [Ni] as principal constituent
• CPC Class Codes: H01L 2224/13164 : Palladium [Pd] as principal constituent
• CPC Class Codes: H01L 2224/13166 : Titanium [Ti] as principal constituent
• CPC Class Codes: H01L 2224/13169 : Platinum [Pt] as principal constituent
• CPC Class Codes: H01L 2224/13171 : Chromium [Cr] as principal constituent
• CPC Class Codes: H01L 2224/13173 : Rhodium [Rh] as principal constituent
• CPC Class Codes: H01L 2224/13176 : Ruthenium [Ru] as principal constituent
• CPC Class Codes: H01L 2224/13181 : Tantalum [Ta] as principal constituent
• CPC Class Codes: H01L 2224/13183 : Rhenium [Re] as principal constituent
• CPC Class Codes: H01L 2224/16 : of an individual bump connector
• CPC Class Codes: H01L 2224/29111 : Tin [Sn] as principal constituent
• CPC Class Codes: H01L 2224/2919 : with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
• CPC Class Codes: H01L 2224/45124 : Aluminium (Al) as principal constituent
• CPC Class Codes: H01L 2224/45144 : Gold (Au) as principal constituent
• CPC Class Codes: H01L 2224/45147 : Copper (Cu) as principal constituent
• CPC Class Codes: H01L 2224/48463 : the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
• CPC Class Codes: H01L 2224/48644 : Gold (Au) as principal constituent
• CPC Class Codes: H01L 2224/48647 : Copper (Cu) as principal constituent
• CPC Class Codes: H01L 2224/48655 : Nickel (Ni) as principal constituent
• CPC Class Codes: H01L 2224/48664 : Palladium (Pd) as principal constituent
• CPC Class Codes: H01L 2224/48669 : Platinum (Pt) as principal constituent
• CPC Class Codes: H01L 2224/48744 : Gold (Au) as principal constituent
• CPC Class Codes: H01L 2224/48747 : Copper (Cu) as principal constituent
• CPC Class Codes: H01L 2224/48755 : Nickel (Ni) as principal constituent
• CPC Class Codes: H01L 2224/48764 : Palladium (Pd) as principal constituent
• CPC Class Codes: H01L 2224/48769 : Platinum (Pt) as principal constituent
• CPC Class Codes: H01L 2224/48844 : Gold (Au) as principal constituent
• CPC Class Codes: H01L 2224/48847 : Copper (Cu) as principal constituent
• CPC Class Codes: H01L 2224/48855 : Nickel (Ni) as principal constituent
• CPC Class Codes: H01L 2224/48864 : Palladium (Pd) as principal constituent
• CPC Class Codes: H01L 2224/48869 : Platinum (Pt) as principal constituent
• CPC Class Codes: H01L 2224/73204 : the bump connector being embedded into the layer connector
• CPC Class Codes: H01L 2224/838 : Bonding techniques
• CPC Class Codes: H01L 2224/85201 : Compression bonding
• CPC Class Codes: H01L 23/5227 : Inductive arrangements or effects of, or between, wiring layers other inductive arrangements H01L23/645
• CPC Class Codes: H01L 23/53238 : Additional layers associated with copper layers, e.g. adhesion, barrier, cladding layers
• CPC Class Codes: H01L 23/53252 : Additional layers associated with noble-metal layers, e.g. adhesion, barrier, cladding layers
• CPC Class Codes: H01L 24/05 : of an individual bonding area
• CPC Class Codes: H01L 24/06 : of a plurality of bonding areas
• CPC Class Codes: H01L 24/11 : Manufacturing methods for bumps on insulating substrates H01L21/4853
• CPC Class Codes: H01L 24/12 : Structure, shape, material or disposition of the bump connectors prior to the connecting process
• CPC Class Codes: H01L 24/16 : of an individual bump connector
• CPC Class Codes: H01L 24/28 : Structure, shape, material or disposition of the layer connectors prior to the connecting process
• CPC Class Codes: H01L 24/45 : of an individual wire connector
• CPC Class Codes: H01L 24/48 : of an individual wire connector
• CPC Class Codes: H01L 24/83 : using a layer connector
• CPC Class Codes: H01L 24/94 : at wafer-level, i.e. with connecting carried out on a wafer comprising a plurality of undiced individual devices
• CPC Class Codes: H01L 2924/00 : Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0001 : Technical content checked by a classifier
• CPC Class Codes: H01L 2924/00013 : Fully indexed content
• CPC Class Codes: H01L 2924/00014 : the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/0002 : Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: H01L 2924/01005 : Boron [B]
• CPC Class Codes: H01L 2924/01006 : Carbon [C]
• CPC Class Codes: H01L 2924/01007 : Nitrogen [N]
• CPC Class Codes: H01L 2924/01011 : Sodium [Na]
• CPC Class Codes: H01L 2924/01013 : Aluminum [Al]
• CPC Class Codes: H01L 2924/01014 : Silicon [Si]
• CPC Class Codes: H01L 2924/01015 : Phosphorus [P]
• CPC Class Codes: H01L 2924/01018 : Argon [Ar]
• CPC Class Codes: H01L 2924/01019 : Potassium [K]
• CPC Class Codes: H01L 2924/01022 : Titanium [Ti]
• CPC Class Codes: H01L 2924/01023 : Vanadium [V]
• CPC Class Codes: H01L 2924/01024 : Chromium [Cr]
• CPC Class Codes: H01L 2924/01027 : Cobalt [Co]
• CPC Class Codes: H01L 2924/01028 : Nickel [Ni]
• CPC Class Codes: H01L 2924/01029 : Copper [Cu]
• CPC Class Codes: H01L 2924/01031 : Gallium [Ga]
• CPC Class Codes: H01L 2924/01032 : Germanium [Ge]
• CPC Class Codes: H01L 2924/01033 : Arsenic [As]
• CPC Class Codes: H01L 2924/01044 : Ruthenium [Ru]
• CPC Class Codes: H01L 2924/01045 : Rhodium [Rh]
• CPC Class Codes: H01L 2924/01046 : Palladium [Pd]
• CPC Class Codes: H01L 2924/01047 : Silver [Ag]
• CPC Class Codes: H01L 2924/01049 : Indium [In]
• CPC Class Codes: H01L 2924/0105 : Tin [Sn]
• CPC Class Codes: H01L 2924/01073 : Tantalum [Ta]
• CPC Class Codes: H01L 2924/01074 : Tungsten [W]
• CPC Class Codes: H01L 2924/01075 : Rhenium [Re]
• CPC Class Codes: H01L 2924/01078 : Platinum [Pt]
• CPC Class Codes: H01L 2924/01079 : Gold [Au]
• CPC Class Codes: H01L 2924/01082 : Lead [Pb]
• CPC Class Codes: H01L 2924/0132 : Binary Alloys
• CPC Class Codes: H01L 2924/01322 : Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
• CPC Class Codes: H01L 2924/01327 : Intermediate phases, i.e. intermetallics compounds
• CPC Class Codes: H01L 2924/0133 : Ternary Alloys
• CPC Class Codes: H01L 2924/014 : Solder alloys
• CPC Class Codes: H01L 2924/04941 : TiN
• CPC Class Codes: H01L 2924/04953 : TaN
• CPC Class Codes: H01L 2924/05042 : Si3N4
• CPC Class Codes: H01L 2924/0665 : Epoxy resin
• CPC Class Codes: H01L 2924/0781 : being an ohmic electrical conductor
• CPC Class Codes: H01L 2924/09701 : Low temperature co-fired ceramic [LTCC]
• CPC Class Codes: H01L 2924/10253 : Silicon [Si]
• CPC Class Codes: H01L 2924/10329 : Gallium arsenide [GaAs]
• CPC Class Codes: H01L 2924/12044 : OLED
• CPC Class Codes: H01L 2924/1305 : Bipolar Junction Transistor [BJT]
• CPC Class Codes: H01L 2924/14 : Integrated circuits
• CPC Class Codes: H01L 2924/15787 : Ceramics, e.g. crystalline carbides, nitrides or oxides
• CPC Class Codes: H01L 2924/19041 : being a capacitor
• CPC Class Codes: H01L 2924/19042 : being an inductor
• CPC Class Codes: H01L 2924/19043 : being a resistor
• CPC Class Codes: H01L 2924/19104 : on the semiconductor or solid-state device, i.e. passive-on-chip
• CPC Class Codes: H01L 2924/30105 : Capacitance

Abstract

A semiconductor chip structure includes a semiconductor substrate, an circuit structure, a passivation layer, a first adhesion/barrier layer, a metal cap and a metal layer. The semiconductor substrate has multiple electric devices located on a surface layer of a surface of the substrate. The circuit structure had multiple circuit layers electrically connecting with each other and electrically connecting with the electric devices. One of the circuit layers has multiple pads. The passivation layer is located on the circuit structure and has multiple openings penetrating through the passivation layer. The openings expose the pads. The first adhesion/barrier layer is over the pads and the passivation layer. The metal cap is located on the first adhesion/barrier layer and the passivation layer. The metal layer is on the metal layer.

Claims

1. A semiconductor chip structure comprising:

a semiconductor substrate;

a metallization structure over said semiconductor substrate, wherein said metallization structure comprise a copper pad;

a passivation layer over said semiconductor substrate and over said metallization structure, wherein an opening in said passivation layer exposes said copper pad;

a first adhesion/barrier layer on said copper pad;

a first metal layer on said first adhesion/barrier layer, wherein said first metal layer comprises aluminum;

a second adhesion/barrier layer over said first metal layer and over said passivation layer; and

a second metal layer over said second adhesion/barrier layer.

2. The semiconductor chip structure of claim 1, wherein said second metal layer has a thickness of between 5 and 25 μ

m.

3. The semiconductor chip structure of claim 1, wherein said second metal layer comprise a gold layer.

4. The semiconductor chip structure of claim 1 further comprising a gold wire bonded to said second metal layer.

5. The semiconductor chip structure of claim 1, wherein said first adhesion/barrier layer comprise a tantalum-containing layer with a thickness of between 0.01 and 0.7 μ

m.

6. The semiconductor chip structure of claim 1, wherein said passivation layer comprises a nitride layer.

7. The semiconductor chip structure of claim 1, wherein said second adhesion/barrier layer comprise a titanium-containing layer with a thickness of between 0.01 and 0.7 μ

m.

8. The semiconductor chip structure of claim 1, further comprising a seed layer between said second metal layer and said second adhesion/barrier layer.

9. The semiconductor chip structure of claim 1, wherein said second metal layer comprise a pad. From a top perspective view, the position of said pad is different from that of said copper pad.

10. The semiconductor chip structure of claim 1, wherein said second metal layer comprise a coil.

11. The semiconductor chip structure of claim 1, further comprising a polymer layer between said second metal layer and said passivation layer.

12. A semiconductor chip or wafer comprising:

a semiconductor substrate;

a metallization structure over said semiconductor substrate, wherein said metallization structure comprise a copper pad;

a first passivation layer over said semiconductor substrate and over said metallization structure, wherein an first opening in said first passivation layer exposes said copper pad;

a first adhesion/barrier layer on said copper pad;

a first metal layer on said first adhesion/barrier layer, wherein said first metal layer comprises aluminum;

a second passivation layer on said first metal layer and on said first passivation layer, wherein an second opening in said second passivation layer exposes said first metal layer;

a second adhesion/barrier layer over said first metal layer and over said second passivation layer; and

a second metal layer over said second adhesion/barrier layer.

13. The semiconductor chip structure of claim 12, wherein said second metal layer has a thickness of between 5 and 25 μ

m.

14. The semiconductor chip structure of claim 12, wherein said second metal layer comprise a gold layer.

15. The semiconductor chip structure of claim 12 further comprising a gold wire bonded to said second metal layer.

16. The semiconductor chip structure of claim 12, wherein said first adhesion/barrier layer comprise a tantalum-containing layer with a thickness of between 0.01 and 0.7 μ

m.

17. The semiconductor chip structure of claim 12, wherein said first passivation layer comprises a nitride layer.

18. The semiconductor chip structure of claim 12, wherein said second passivation layer comprises a oxide layer.

19. The semiconductor chip structure of claim 12, wherein said second metal layer comprise a pad. From a top perspective view, the position of said pad is different from that of said copper pad.

20. The semiconductor chip structure of claim 12, further comprising a polymer layer between said second metal layer and said second passivation layer.