Structures Electrically Connecting Aluminum and Copper Interconnections and Methods of Forming the Same
First Claim
1. A structure electrically connecting aluminum and copper interconnections, comprising.an interconnection induction layer and an interconnection insertion layer defining a contact hole, having a step difference on a sidewall of the contact hole such that a width of the contact hole narrows from an upper part of the contact hole to a lower part thereof and formed of nitride and oxide respectively.
1 Assignment
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Accused Products
Abstract
A structure and formation method for electrically connecting aluminum and copper interconnections stabilize a semiconductor metallization process using an inner shape electrically connecting the aluminum and copper interconnections. To this end, a copper interconnection is disposed on a semiconductor substrate. An interconnection induction layer and an interconnection insertion layer are sequentially formed on the copper interconnection to have a contact hole exposing the copper interconnection. An upper diameter of the contact hole may be formed to be larger than a lower diameter thereof. A barrier layer and an aluminum interconnection are filled in the contact hole. The aluminum interconnection is formed not to directly contact the copper interconnection through the contact hole.
10 Citations
30 Claims
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1. A structure electrically connecting aluminum and copper interconnections, comprising.
an interconnection induction layer and an interconnection insertion layer defining a contact hole, having a step difference on a sidewall of the contact hole such that a width of the contact hole narrows from an upper part of the contact hole to a lower part thereof and formed of nitride and oxide respectively.
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4. A structure electrically connecting aluminum and copper interconnections, comprising:
an interconnection induction layer, an interconnection filling layer and an interconnection insertion layer defining a contact hole, having respective step differences therebetween on a sidewall of the contact hole such that a width of the contact hole narrows from an upper part of the contact hole to a lower part thereof, and formed of first nitride, second nitride and oxide, respectively. - View Dependent Claims (5, 6, 7)
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8. A structure electrically connecting aluminum and copper interconnections, comprising:
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an interconnection induction layer and an interconnection insertion layer defining a contact hole, having a first step difference on a sidewall of the contact hole such that a width of the contact hole narrows from an upper part of the contact hole to a lower part thereof, and formed of first nitride and oxide, respectively; and a contact spacer disposed on the sidewalls of the contact hole to have a second step difference corresponding to the first step difference of the sidewall and formed of second nitride. - View Dependent Claims (9, 10, 11)
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12. A method of forming a structure electrically connecting aluminum and copper interconnections, the method comprising:
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preparing an interconnection induction layer formed of nitride; forming an interconnection insertion layer formed of oxide on the interconnection induction layer; forming a first hole sequentially penetrating the interconnection insertion layer and the interconnection induction layer; and forming a second hole in the interconnection insertion layer by enlarging the first hole to partially expose a top surface of the interconnection induction layer, the first and second holes forming one contact hole including the first and second holes. - View Dependent Claims (13, 14, 15, 16)
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17. A method of forming a structure electrically connecting aluminum and copper interconnections, the method comprising:
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preparing an interconnection induction layer formed of first nitride; forming, sequentially, an interconnection filling layer formed of second nitride and an interconnection insertion layer formed of oxide on the interconnection induction layer; forming a first hole sequentially penetrating the interconnection insertion layer, the interconnection filling layer and the interconnection induction layer; forming a second hole in the interconnection insertion layer and the interconnection filling layer by enlarging the first hole to partially expose a top surface of the interconnection induction layer; and forming a third hole in the interconnection insertion layer by enlarging the second hole to partially expose a top surface of the interconnection filling layer, the first to third holes forming one contact hole. - View Dependent Claims (18, 19, 20, 21, 22, 23)
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24. A method of forming a structure electrically connecting aluminum and copper interconnections, the method comprising:
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preparing an interconnection induction layer formed of first nitride; forming an interconnection insertion layer formed of oxide on the interconnection induction layer; forming a first hole sequentially penetrating the interconnection insertion layer and the interconnection induction layer; forming a second hole in the interconnection insertion layer by enlarging the first hole to partially expose a top surface of the interconnection induction layer, the first and second holes forming one contact hole; and forming a contact spacer covering a sidewall of the one contact hole and formed of second nitride. - View Dependent Claims (25, 26, 27, 28, 29, 30)
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Specification