Non-volatile memory with both single and multiple level cells
First Claim
1. A memory array, comprising:
- a number of single level non-volatile memory cells;
a number of multiple level non-volatile memory cells;
a number of select gates coupled in series to the number of single level non-volatile memory cells and the number of multiple level non-volatile memory cells; and
wherein a first select gate is coupled to a first single level non-volatile memory cell interposed between and coupled to the first select gate and a first multiple level non-volatile memory cell that is directly coupled to a continuous number of additional multiple level non-volatile memory cells.
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Abstract
Memory arrays, and modules, devices and systems that utilize such memory arrays, are described as having a single level non-volatile memory cell interposed between and coupled to a select gate and a multiple level non-volatile memory cell. Various embodiments include structure, process, and operation and their applicability for memory devices and systems. In some embodiments, a memory array is described as including a number of select gates coupled in series to a number of single level non-volatile memory cells and a number of multiple level non-volatile memory cells, where a first select gate is coupled to a first single level non-volatile memory cell interposed between and coupled to the first select gate and a first multiple level non-volatile memory cell.
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Citations
42 Claims
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1. A memory array, comprising:
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a number of single level non-volatile memory cells; a number of multiple level non-volatile memory cells; a number of select gates coupled in series to the number of single level non-volatile memory cells and the number of multiple level non-volatile memory cells; and wherein a first select gate is coupled to a first single level non-volatile memory cell interposed between and coupled to the first select gate and a first multiple level non-volatile memory cell that is directly coupled to a continuous number of additional multiple level non-volatile memory cells. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. A memory array, comprising:
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a number of NAND strings of non-volatile memory cells; a number of source select gates on a source side of a string; a number of drain select gates on a drain side of a string; and wherein the number of source select gates includes a number of source select gates individually coupled to a single level non-volatile memory cell, and the number of drain select gates includes a number of drain select gates individually coupled to a single level non-volatile memory cell; and wherein the single level non-volatile memory cells individually coupled to the source select gates and the single level non-volatile memory cells individually coupled to the drain select gates are coupled to and separated by a continuous series of multiple level non-volatile memory cells. - View Dependent Claims (10, 11, 12, 13)
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14. A memory device, comprising:
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an array of non-volatile memory cells including a string of non-volatile memory cells; circuitry for control and access to the array of non-volatile memory cells; wherein the array of non-volatile memory cells includes; a number of single level non-volatile memory cells; a number of multiple level non-volatile memory cells; a number of select gates coupled in series to the number of single level non-volatile memory cells and the number of multiple level non-volatile memory cells; and wherein a first select gate is coupled to a first single level non-volatile memory cell interposed between and coupled to the first select gate and a first multiple level non-volatile memory cell that is directly coupled to a continuous number of additional multiple level non-volatile memory cells. - View Dependent Claims (15, 16, 17, 18)
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19. A memory module, comprising:
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a number of contacts; two or more memory devices, each having access lines selectively coupled to the number of contacts; and wherein at least one of the memory devices includes; an array of non-volatile memory cells including a string of non-volatile memory cells; circuitry for control and access to the array of non-volatile memory cells; wherein the array of non-volatile memory cells includes; a number of NAND strings of non-volatile memory cells; a number of source select gates on a source side of a string; a number of drain select gates on a drain side of a string; and wherein the number of source select gates includes a number of source select gates individually coupled to a single level non-volatile memory cell, and the number of drain select gates includes a number of drain select gates individually coupled to a single level non-volatile memory cell; and wherein the single level non-volatile memory cells individually coupled to the source select gates and the single level non-volatile memory cells individually coupled to the drain select gates are coupled to and separated by a continuous series of multiple level non-volatile memory cells. - View Dependent Claims (20)
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21. An electronic system, comprising:
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a processor; and a memory device coupled to the processor, wherein the memory device includes; an array of non-volatile memory cells including a NAND string; circuitry for control and access to the array of non-volatile memory cells; and wherein the array of non-volatile memory cells includes; no source select gate and no drain select gate being adjacent a multiple level non-volatile memory cell in the NAND string; each select gate and each drain select gate being adjacent a single level non-volatile memory cell in the NAND string; and no multiple level non-volatile memory cell being adjacent more than one single level non-volatile memory cell in the NAND string. - View Dependent Claims (22)
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23. A method of forming a memory array, comprising:
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forming a number of series coupled non-volatile memory cells; forming a number of series coupled select gates, wherein the series coupled select gates are coupled in series with the number of non-volatile memory cells; and wherein forming the number of series coupled non-volatile memory cells includes forming a first single level non-volatile memory cell directly coupled to a first select gate and directly coupled to a first multiple level non-volatile memory cell; wherein forming the number of series coupled non-volatile memory cells includes forming a second single level non-volatile memory cell directly coupled to a second select gate and directly coupled to a second multiple level non-volatile memory cell; and wherein forming the number of series coupled non-volatile memory cells includes forming the first multiple level non-volatile memory cell and the second multiple level non-volatile memory cell directly coupled to at least one interposed multiple level non-volatile memory cell. - View Dependent Claims (24, 25, 26, 27, 28, 29)
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- 30. A method of forming a memory block, comprising adding a number of word lines to a string having a number of single level non-volatile memory cells and a number of multiple level memory cells for maintaining a previous memory block size.
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35. A method for operating a memory system, comprising:
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applying a first select line potential to a source select gate and second select line potential to a drain select gate; applying a first word line potential to a second non-volatile memory cell in a NAND string relative to a direction of the source gate and the drain gate that is closer, wherein the second non-volatile memory cell is a first multiple level non-volatile memory cell directly coupled to at least one additional multiple level non-volatile memory cell; and applying a second word line potential to a first non-volatile memory cell in the NAND string, which is a single level non-volatile memory cell, wherein the second word line potential is lower than the first word line potential and greater than a potential of a directly coupled select gate. - View Dependent Claims (36)
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- 37. A method of programming a memory array, comprising programming a single level memory cell adjacent a select gate to a programmed state when a next adjacent multiple level memory cell is in a programmed state.
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39. A method for programming a NAND flash memory device comprising a memory array having a plurality of source select gates, a plurality of drain select gates, a plurality of single level non-volatile memory cells, and a plurality of multiple level non-volatile memory cells, the method comprising:
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programming the memory array such that no source select gate and no drain select gate is adjacent a multiple level non-volatile memory cell in a NAND string; programming the memory array such that each source select gate and each drain select gate is adjacent a single level non-volatile memory cell in the NAND string; and programming the memory array such that no multiple level non-volatile memory cell is adjacent more than one single level non-volatile memory cell in the NAND string. - View Dependent Claims (40, 41, 42)
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Specification