Method and system for minimizing number of programming pulses used to program rows of non-volatile memory cells

• US 20080043535A1
• Filed: 08/18/2006
• Published: 02/21/2008
• Est. Priority Date: 08/18/2006
• Status: Active Grant

• Current Assignee: Micron Technology, Inc.
• Original Assignee: Micron Technology, Inc.
• Inventors: Roohparvar, Frankie
• Granted Patent: US 7,567,461 B2
• Time in Patent Office: Days
• US Class Current: 365/185.19
• CPC Class Codes: G11C 16/10 Programming or data input circuits
• CPC Class Codes: G11C 16/3436 Arrangements for verifying correct programming or erasure
• CPC Class Codes: G11C 7/16 Storage of analogue signals in digital stores using an arrangement comprising analogue/digital [A/D] converters, digital memories and digital/analogue [D/A] converters
• CPC Class Codes: G11C 8/10 Decoders

Abstract

A flash memory device programs cells in each row in a manner that minimizes the number of programming pulses that must be applied to the cells during programming. The flash memory device includes a pseudo pass circuit that determines the number of data errors in each of a plurality of subsets of data that has been programmed in the row. The size of each subset corresponds to the number of read data bits coupled from the memory device, which are simultaneously applied to error checking and correcting circuitry. During iterative programming of a row of cells, the pseudo pass circuit indicates a pseudo pass condition to terminate further programming of the row if none of the subsets of data have a number of data errors that exceeds the number of data errors that can be corrected by the error checking and correcting circuitry.

Claims

1. A method of programming a row in an array of memory cells in a non-volatile memory device, the method comprising:

programming the memory cells in the row;

verifying the programming of the memory cells by determining if each of the memory cells in each of a plurality of subsets of the memory cells in the row are properly programmed;

determining if less than a predetermined number of memory cells are not properly programmed in each of the subsets; and

in response to determining that less than a predetermined number of memory cells are not properly programmed in all of the subsets, providing a pseudo pass signal.

2. The method of claim 1 wherein the act of determining if less than a predetermined number of memory cells are not properly programmed comprises, for each subset:

determining the number of memory cells in the subset that are not properly programmed; and

comparing the determined number of memory cells that are not properly programmed to the predetermined number.

3. The method of claim 2 wherein the act of determining the number of memory cells in the subset that are not properly programmed comprises:

providing a respective pass signal indicative of whether or not each memory cell in the subset is properly programmed; and

processing the pass signals to provide a first plurality of bits indicative of the number of memory cells that are not properly programmed.

4. The method of claim 3 wherein the act of comparing the determined number of memory cells that are not properly programmed to the predetermined number comprises:

providing a second plurality of bits indicative of the predetermined number; and

comparing the number indicated by the first plurality of bits to the number indicated by the second plurality of bits.

5. The method of claim 1, further comprising repeating the programming and verifying of the memory cells in the row until the pseudo pass signal is generated.

6. The method of claim 1 further comprising reading data from the non-volatile memory device, the number of read data bits output from the non-volatile memory device being equal to the number of data bits stored in each of the subsets of memory cells.

7. In a non-volatile memory device having an array of memory cells arranged in rows and columns, a method of programming a row of non-volatile memory cells in the array, comprising:

programming the memory cells in the row;

verifying the programming of the memory cells by determining if the memory cells in each of a plurality of subsets of the memory cells in the row are properly programmed;

determining if more than a predetermined number of memory cells are not properly programmed in any of the subsets; and

in response to determining that more than a predetermined number of memory cells are not properly programmed in any of the subsets, repeating the programming and verifying of the memory cells in the row.

8. The method of claim 7 wherein the act of determining if more than a predetermined number of memory cells are not properly programmed in any of the subsets comprises, for each subset:

determining the number of memory cells in the subset that are not properly programmed; and

comparing the determined number of memory cells that are not properly programmed to the predetermined number.

9. The method of claim 8 wherein the act of determining the number of memory cells in the subset that are not properly programmed comprises:

providing a respective pass signal indicative of whether or not each memory cell in the subset is properly programmed; and

processing the pass signals to provide a first plurality of bits indicative of the number of memory cells that are not properly programmed.

10. The method of claim 9 wherein the act of comparing the determined number of memory cells that are not properly programmed to the predetermined number comprises:

providing a second plurality of bits indicative of the predetermined number; and

comparing the number indicated by the first plurality of bits to the number indicated by the second plurality of bits.

11. The method of claim 7 wherein the act of repeating the programming and verifying of the memory cells in the row in response to determining that more than a predetermined number of memory cells are not properly programmed in any of the subsets comprises repeating the programming and verifying of the memory cells in the row until the number of memory cells that are not properly programmed is no longer greater than the predetermined number in any of the subsets.

12. The method of claim 7 further comprising reading data from the non-volatile memory device, the number of read data bits output from the non-volatile memory device being equal to the number of data bits stored in each of the subsets of memory cells.

13. In a processor-based system having a processor coupled to a non-volatile memory device having an array of memory cells arranged in rows and columns, the processor-based system further having error checking and correcting circuitry structured to check and correct sets of data read from the non-volatile memory device, a method of programming a row of memory cells in the array, comprising:

programming the memory cells in the row;

determining if the memory cells in each of a plurality of subsets of the memory cells in the row are properly programmed, each of the subsets of the memory cells storing respective ones of the subsets of data read from the non-volatile memory device;

determining if more than a predetermined number of memory cells in any of the subsets are not properly programmed; and

in response to determining that more than a predetermined number of memory cells in any of the subsets are not properly programmed, repeating the programming of the memory cells in the row.

14. The method of claim 13 wherein the act of determining if more than a predetermined number of memory cells are not properly programmed in any of the subsets comprises, for each subset:

determining the number of memory cells in the subset that are not properly programmed;

comparing the determined number of memory cells that are not properly programmed to the predetermined number.

15. The method of claim 14 wherein the act of determining the number of memory cells that are not properly programmed in the subset comprises:

providing a respective pass signal indicative of whether or not each memory cell in the subset is properly programmed; and

processing the pass signals to provide a first plurality of bits indicative of the number of memory cells that are not properly programmed.

16. The method of claim 15 wherein the act of comparing the determined number of memory cells that are not properly programmed to the predetermined number comprises:

providing a second plurality of bits indicative of the predetermined number; and

comparing the number indicated by the first plurality of bits to the number indicated by the second plurality of bits.

17. The method of claim 13 wherein the act of repeating the programming and verifying of the memory cells in the row in response to determining that more than a predetermined number of memory cells are not properly programmed in any of the subsets comprises repeating the programming and verifying of the memory cells in the row until the number of memory cells that are not properly programmed is no longer greater than the predetermined number in any of the subsets.

18. The method of claim 13 wherein the processor-based system further comprises a non-volatile memory controller connected to the processor and the non-volatile memory device, and wherein the error checking and correcting circuitry is located in the non-volatile memory controller.

19. The method of claim 13 wherein the error checking and correcting circuitry is structured to correct a maximum of a predetermined number of bits in each of the sets of data read from the non-volatile memory device, and wherein the predetermined number of memory cells is equal to the predetermined number of bits.

20. The method of claim 13 further comprising reading data from the non-volatile memory device, the number of read data bits output from the non-volatile memory device being equal to the number of data bits stored in each of the subsets of memory cells.

21. In a processor-based system having a processor coupled to a non-volatile memory device having an array of memory cells arranged in rows and columns, the processor-based system further having error checking and correcting circuitry structured to check and correct sets of data read from the non-volatile memory device, a method of programming a row of memory cells in the array, comprising:

programming the memory cells in the row;

determining if each of the memory cells in each of a plurality of subsets of the memory cells in the row are properly programmed, each of the subsets of the memory cells storing respective subsets of data read from the non-volatile memory device;

determining if less than a predetermined number of memory cells are not properly programmed in each of the subsets; and

in response to determining that less than a predetermined number of memory cells are not properly programmed in all of the subsets, providing a pseudo pass signal.

22. The method of claim 21 wherein the act of determining if less than a predetermined number of memory cells are not properly programmed comprises, for each subset:

determining the number of memory cells in the subset that are not properly programmed; and

comparing the determined number of memory cells that are not properly programmed to the predetermined number.

23. The method of claim 22 wherein the act of determining the number of memory cells in the subset that are not properly programmed comprises:

providing a respective pass signal indicative of whether or not each memory cell in the subset is properly programmed; and

processing the pass signals to provide a first plurality of bits indicative of the number of number of memory cells that are not properly programmed.

24. The method of claim 23 wherein the act of comparing the determined number of memory cells that are not properly programmed to the predetermined number comprises:

providing a second plurality of bits indicative of the predetermined number; and

comparing the number indicated by the first plurality of bits to the number indicated by the second plurality of bits.

25. The method of claim 21, further comprising repeating the programming and verifying of the memory cells in the row until the pseudo pass signal is generated.

26. The method of claim 21 wherein the processor-based system further comprises a non-volatile memory controller connected to the processor and the non-volatile memory device, and wherein the error checking and correcting circuitry is located in the non-volatile memory controller.

27. The method of claim 21 wherein the error checking and correcting circuitry is structured to correct a maximum of a predetermined number of bits in each of the sets of data read from the non-volatile memory device, and wherein the predetermined number of bits is less than the predetermined number of memory cells.

28. The method of claim 21 further comprising reading data from the non-volatile memory device, the number of read data bits output from the non-volatile memory device being equal to the number of data bits stored in each of the subsets of memory cells.

29. A non-volatile memory device, comprising:

an array of non-volatile memory cells arranged in rows and columns; and

a control logic unit coupled to the array of non-volatile memory cells, the control logic being operable to carry out operations in the array corresponding to a memory command at a location in the array corresponding to a memory address, the operations including programming memory cells in each row of the array and verifying the programming of the memory cells by determining if each of the memory cells in each of a plurality of subsets of the memory cells in the row are properly programmed; and

a pseudo pass circuit coupled to the array and the control logic unit, the pseudo pass circuit being structured to determine if less than a predetermined number of memory cells are not properly programmed in all of the subsets, and in response thereto, to provide a pseudo pass signal.

30. The non-volatile memory device of claim 29 wherein the pseudo pass circuit comprises:

a register structured to store write data for programming a row of memory cells in the array;

a comparator structured to compare each bit of write data stored in the register with a corresponding bit of data stored in a row of memory cells in the array as a result of attempting to program the row of memory cells with the write data stored in the register, the comparator being structured to generate a respective match signal indicative of whether each bit of write data stored in the register matches the corresponding bit of data stored in the row of memory cells in the array; and

a logic circuit coupled to receive the match signals from the comparator, the logic circuit being operable to generate for each of a plurality of subsets of bits of write data stored in the memory cells in the row a respective pass signal if less than a predetermined number of match signals indicative of respective bits of write data stored in the register not matching the corresponding bit of data stored in the row of memory cells in the array have been received for the subset of bits of write data, the logic circuit being structured to generate a pseudo pass signal if a respective pass signal has been received for all of the plurality of subsets of bits of data stored in the memory cells in the row.

31. The non-volatile memory device of claim 30 wherein the logic circuit comprises an analog logic circuit.

32. The non-volatile memory device of claim 30 wherein the logic circuit comprises a digital logic gate.

33. The non-volatile memory device of claim 30 wherein the control logic unit is coupled to receive the pseudo pass signal from the logic circuit, and wherein the control logic unit is structured to repeatedly program and verify the memory cells in the row until the pseudo pass signal is generated by the logic circuit.

34. The non-volatile memory device of claim 30 wherein the logic circuit generates respective first sets of signals corresponding to the number of match signals received for each of the subsets of bits of write data, and wherein the logic circuit comprises:

a register storing and outputting a second set of signals corresponding to the predetermined number of match signals; and

a second comparator comparing the second set of signals to each of the first sets of signals.

35. The non-volatile memory device of claim 29 wherein the array of non-volatile memory cells comprise an array of flash memory cells.

36. The non-volatile memory device of claim 35 wherein at least some of the flash memory cells in each row of the array comprise multi-level flash memory cells.

37. The non-volatile memory device of claim 29 wherein read data bits are output from the non-volatile memory device, the number of read data bits output from the non-volatile memory device being equal to the number of data bits stored in each of the subsets of memory cells.

43. The processor-based system of claim 37 wherein the logic circuit generate respective first sets of signals corresponding to the number of error signals received for each of the subsets of bits of write data, and wherein the logic circuit comprises:

a register storing and outputting a second set of signals corresponding to the predetermined number of error signals; and

a second comparator comparing the second set of signals to each of the first sets of signals.

38. A processor-based system, comprising:

a processor operable to process data and to provide memory commands and addresses;

an input device coupled to the processor;

an output device coupled to the processor; and

a non-volatile memory device, comprising;

an array of non-volatile memory cells arranged in rows and columns; and

a control logic unit coupled to the array of non-volatile memory cells, the control logic being operable to carry out operations in the array corresponding to a memory command at a location in the array corresponding to a memory address, the operations including programming memory cells in each row of the array and verifying the programming of the memory cells by determining if each of the memory cells in each of a plurality of subsets of the memory cells in the row are properly programmed; and

a pseudo pass circuit coupled to the array and the control logic unit, the pseudo pass circuit being structured to determine if less than a predetermined number of memory cells are not properly programmed in all of the subsets, and in response thereto, to provide a pseudo pass signal.

39. The processor-based system of claim 38 wherein the pseudo pass circuit comprises:

a register structured to store write data for programming a row of memory cells in the array;

a comparator structured to compare each bit of write data stored in the register with a corresponding bit of data stored in a row of memory cells in the array as a result of attempting to program the row of memory cells with the write data stored in the register, the comparator being structured to generate a respective match signal indicative of whether each bit of write data stored in the register matches the corresponding bit of data stored in the row of memory cells in the array;

a logic circuit coupled to receive the match signals from the comparator, the logic circuit being operable to generate for each of a plurality of subsets of bits of write data stored in the memory cells in the row a respective pass signal if less than a predetermined number of match signals indicative of respective bits of write data stored in the register not matching the corresponding bit of data stored in the row of memory cells in the array, the logic circuit being structured to generate a pseudo pass signal if a respective pass signal has been received for all of the plurality of subsets of bits of write data stored in the memory cells in the row.

40. The non-volatile memory device of claim 38 wherein the logic circuit comprises an analog logic circuit.

41. The non-volatile memory device of claim 38 wherein the logic circuit comprises a digital logic gate.

42. The processor-based system of claim 39 wherein the control logic unit is coupled to receive the pseudo pass signal from the logic circuit, and wherein the control logic unit is structured to repeatedly program and verify the memory cells in the row until the pseudo pass signal is generated by the logic circuit.

44. The processor-based system of claim 38 wherein the array of non-volatile memory cells comprise an array of flash memory cells.

45. The processor-based system of claim 44 wherein at least some of the flash memory cells in each row of the array comprise multi-level flash memory cells.

46. The processor-based system of claim 38, further comprising error checking and correcting circuitry structured to check and correct sets of data read from the non-volatile memory device.

47. The processor-based system of claim 46, further comprising a non-volatile memory controller connected to the processor and the non-volatile memory device, and wherein the error checking and correcting circuitry is located in the non-volatile memory controller.

48. The method of claim 46 wherein the error checking and correcting circuitry is structured to correct a maximum of a predetermined number of bits in each of the sets of data read from the non-volatile memory device, and wherein the predetermined number of bits correctable by the error checking and correcting circuitry is less than or equal to the predetermined number of error signals.

49. The processor-based system of claim 38 wherein read data bits are output from the non-volatile memory device, the number of read data bits output from the non-volatile memory device being equal to the number of data bits stored in each of the subsets of memory cells.