Vertical-Cavity Semiconductor Optical Devices

• US 20080043798A1
• Filed: 03/24/2004
• Published: 02/21/2008
• Est. Priority Date: 03/24/2003
• Status: Abandoned Application

• Current Assignee: University of Strathclyde
• Original Assignee: University of Strathclyde
• Inventors: Burns, David, Dawson, Martin David, Hopkins, John-Mark, Calvez, Stephane Luc Dominique, Jeon, Chan Wook, Choi, Hoi Wai
• Application Number:
  US10/550,846
• Publication Number:
  US 20080043798A1
• Time in Patent Office: Days
• US Class Current: 372/50.22
• CPC Class Codes: H01S 5/02476 Heat spreaders, i.e. improving heat flow between laser chip and heat dissipating elements
• CPC Class Codes: H01S 5/041 Optical pumping
• CPC Class Codes: H01S 5/141 using a wavelength selective device, e.g. a grating or etalon H01S5/146 takes precedence
• CPC Class Codes: H01S 5/18383 with periodic active regions at nodes or maxima of light intensity
• CPC Class Codes: H01S 5/18388 Lenses

Abstract

A vertical-cavity device comprises: (a) a chip comprising an active semiconductor layer for providing optical gain; (b) a first mirror arranged on a first side of the active layer; (c) a second mirror arranged on a second side of the active layer, opposite to the first mirror, and forming with at least the first mirror an optically resonant cavity that passes through the active layer in a direction out of the plane of the active layer; (d) a heatspreader for removing heat from the active layer, the heatspreader being arranged inside the cavity and having a first surface adjacent to the chip and a second surface opposite to the first surface, the heatspreader being transparent to light of wavelengths in an operating bandwidth of the device. In addition to removing heat from the active layer, the heatspreader also has one or more further selected property that has a further selected effect on light output from the device.

Claims

1. A vertical-cavity device comprising:

(a) a chip comprising an active semiconductor layer for providing configured to provide optical gain;

(b) a first mirror arranged on a first side of the active layer;

(c) a second mirror arranged on a second side of the active layer, opposite to the first mirror, and forming with at least the first mirror an optically resonant cavity that passes through the active layer in a direction out of the plane of the active layer; and

(d) a heatspreader for removing heat from the active layer, the heatspreader being arranged inside the cavity and having a first surface adjacent to the chip and a second surface opposite to the first surface, the heatspreader being transparent to light of wavelengths in an operating bandwidth of the device and having at least one selected property that has a further selected effect on light output from the device.

2. A device as claimed in claim 1, in which the heatspreader is birefringent and the further selected effect is on the polarisation of the output light.

3. A device as claimed in claim 2, in which the difference in between the refractive indices of the heatspreader'"'"'s slow and fast polarisation axes is greater than 0.01.

4. A device as claimed in claim 2, comprising a further element that limits the output light to a linear polarisation.

5. A device as claimed in claim 1, in which the heatspreader has a nonlinear optical response.

6. A device as claimed in claim 1, in which the shape of the heatspreader provides the further selected effect.

7. A device as claimed in claim 6, in which the second surface of the heatspreader is curved or includes a curved structure.

8. A device as claimed in claim 1, in which the heatspreader focuses or defocuses the output light.

9. A device as claimed in claim 1, in which the heatspreader focuses pump light into the active layer.

10. A device as claimed in claim 1, in which the further selected effect is on light generated in the active semiconductor layer at a fundamental frequency of the device.

11. A device as claimed in claim 1, in which the selected property of the heatspreader has been selected to affect the spectrum of the output light.

12. A device as claimed in claim 11, in which the heatspreader has a refractive index that has been selected to provide substantially no refractive index step at the first surface.

13. A device as claimed in claim 12, in which reflectance at the first surface of the heatspreader is less than 5%.

14. A device as claimed in claim 10, in which the heatspreader has a refractive index that has been selected to provide a refractive index step at the first surface.

15. A device as claimed in claim 1, in which the second surface of the heatspreader is at an angle to the layers of the chip.

16. A device as claimed in claim 1, in which the heatspreader has a shape selected to provide control of a spatial mode of the output light.

17. A device as claimed in claim 16, in which the heatspreader focuses or defocuses intracavity light.

18. A device as claimed in claim 17, in which the second mirror is flat.

19. A device as claimed in claim 18 in which the second mirror is a MEMS mirror.

20. A device as claimed in claim 1, in which the second surface of the heatspreader has a dielectric coating.

21. A device as claimed in claim 20, in which the dielectric coating is an anti-reflection coating.

22. A device as claimed in claim 20, in which the dielectric coating is a mirror coating and forms the second mirror.

23. A device as claimed in claim 1, in which the heatspreader has a thickness of less than 1.5 mm.

24. A device as claimed in claim 1, in which the heatspreader is a loss modulator.

30. An amplifier or laser including a source of pump light comprising a device according to claim 1.

31. An amplifier or laser as claimed in claim 30 that is a Raman amplifier.

25. A method of manufacturing a vertical-cavity device, comprising:

(a) fabricating a chip comprising an active semiconductor layer for providing optical gain;

(b) providing a first mirror on a first side of the active layer;

(c) providing a second mirror on a second side of the active layer, opposite to the first mirror, which forms with at least the first mirror an optically resonant cavity that passes through the active layer in a direction out of the plane of the active layer;

(d) providing in the cavity a heatspreader for removing heat from the active layer, the heatspreader having a first surface adjacent to the chip and a second surface opposite to the first surface, the heatspreader being transparent to light of wavelengths in the operating bandwidth of the device; and

(e) selecting at least one property of the heatspreader to have a selected effect on the output light, in addition to the effect of removing heat from the active layer.

26. A method as claimed in claim 25, including the step of forming the second surface of the heatspreader to be curved or to include a curved structure.

27. A method as claimed in claim 26, in which the curved surface is formed by polishing.

28. A method as claimed in claim 26, in which the curved surface or the curved structure is formed by etching.

29. A device manufactured by a method according to claim 25.

32. A vertical cavity device comprising:

(a) a chip comprising an active semiconductor layer for providing optical gain;

(b) a first mirror arranged on a first side of the active layer suitable for forming with at least a second mirror arranged on a second side of the active layer, opposite to the first mirror, an optically resonant cavity that passes through the active layer in a direction out of the plane of the active layer; and

(c) a heatspreader for removing heat from the active layer, having a first surface adjacent to the active layer and a second surface opposite to the first surface, the heatspreader being transparent to light of wavelengths in an operating bandwidth of the device and,

in addition to removing heat from the active layer, at least one further selected property that has a further selected effect on light output from the device.