METHOD OF FORMING A MATERIAL LAYER
First Claim
1. A method of processing a wafer in a chamber including a wafer stage and a showerhead, the method comprising:
- forming a first protection layer on the wafer stage;
heating the wafer stage to a first temperature;
heating the showerhead at a second temperature lower than the first temperature;
forming a second protection layer on inner surfaces of the process chamber including at least the wafer stage and showerhead;
loading a wafer onto the wafer stage, forming a material layer on the wafer, and then unloading the wafer from the wafer stage; and
removing by-products generated on the inner surfaces of the process chamber during formation of the material layer while maintaining the first temperature of the wafer stage and the second temperature of the showerhead.
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Abstract
A method of processing a wafer in a chamber including a wafer stage and a showerhead is disclosed. The method includes forming a first protection layer on the wafer stage, heating the wafer stage to a first temperature, heating the showerhead at a second temperature lower than the first temperature, forming a second protection layer on inner surfaces of the process chamber including at least the wafer stage and showerhead, loading a wafer onto the wafer stage, forming a material layer on the wafer, and then unloading the wafer from the wafer stage, and removing by-products generated on the inner surfaces of the process chamber during formation of the material layer while maintaining the first temperature of the wafer stage and the second temperature of the showerhead.
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Citations
13 Claims
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1. A method of processing a wafer in a chamber including a wafer stage and a showerhead, the method comprising:
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forming a first protection layer on the wafer stage; heating the wafer stage to a first temperature; heating the showerhead at a second temperature lower than the first temperature; forming a second protection layer on inner surfaces of the process chamber including at least the wafer stage and showerhead; loading a wafer onto the wafer stage, forming a material layer on the wafer, and then unloading the wafer from the wafer stage; and removing by-products generated on the inner surfaces of the process chamber during formation of the material layer while maintaining the first temperature of the wafer stage and the second temperature of the showerhead. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13)
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Specification