×

METHOD OF FORMING A MATERIAL LAYER

  • US 20080044593A1
  • Filed: 07/24/2007
  • Published: 02/21/2008
  • Est. Priority Date: 08/17/2006
  • Status: Abandoned Application
First Claim
Patent Images

1. A method of processing a wafer in a chamber including a wafer stage and a showerhead, the method comprising:

  • forming a first protection layer on the wafer stage;

    heating the wafer stage to a first temperature;

    heating the showerhead at a second temperature lower than the first temperature;

    forming a second protection layer on inner surfaces of the process chamber including at least the wafer stage and showerhead;

    loading a wafer onto the wafer stage, forming a material layer on the wafer, and then unloading the wafer from the wafer stage; and

    removing by-products generated on the inner surfaces of the process chamber during formation of the material layer while maintaining the first temperature of the wafer stage and the second temperature of the showerhead.

View all claims
  • 1 Assignment
Timeline View
Assignment View
    ×
    ×