Technique for low-temperature ion implantation
First Claim
1. An apparatus for low-temperature ion implantation, the apparatus comprising:
- a pre-chill station located in proximity to an end station in an ion implanter;
a cooling mechanism within the pre-chill station;
a loading assembly coupled to the pre-chill station and the end station; and
a controller in communication with the loading assembly and the cooling mechanism to coordinate loading a wafer into the pre-chill station, cooling the wafer down to a predetermined temperature range, and loading the cooled wafer into the end station where the cooled wafer undergoes an ion implantation process.
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Abstract
A technique for low-temperature ion implantation is disclosed. In one particular exemplary embodiment, the technique may be realized as an apparatus for low-temperature ion implantation. The apparatus may comprise a pre-chill station located in proximity to an end station in an ion implanter. The apparatus may also comprise a cooling mechanism within the pre-chill station. The apparatus may further comprise a loading assembly coupled to the pre-chill station and the end station. The apparatus may additionally comprise a controller in communication with the loading assembly and the cooling mechanism to coordinate loading a wafer into the pre-chill station, cooling the wafer down to a predetermined temperature range, and loading the cooled wafer into the end station where the cooled wafer undergoes an ion implantation process.
316 Citations
35 Claims
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1. An apparatus for low-temperature ion implantation, the apparatus comprising:
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a pre-chill station located in proximity to an end station in an ion implanter; a cooling mechanism within the pre-chill station; a loading assembly coupled to the pre-chill station and the end station; and a controller in communication with the loading assembly and the cooling mechanism to coordinate loading a wafer into the pre-chill station, cooling the wafer down to a predetermined temperature range, and loading the cooled wafer into the end station where the cooled wafer undergoes an ion implantation process. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19)
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20. A method for low-temperature ion implantation, the method comprising the steps of:
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loading a wafer into a first vacuum space; cooling the wafer to a predetermined temperature range while the wafer is in the first vacuum space; loading the cooled wafer to a second vacuum space separate from the first vacuum space; and performing an ion implantation process on the cooled wafer in the second vacuum space. - View Dependent Claims (21, 22, 23, 24, 25, 26, 27, 28, 29, 30)
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31. An ion implanter comprising:
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at least one end station; at least one pre-chill station located in proximity to the at least one end station, the at least one pre-chill station having a cooling mechanism; a loading assembly coupled to the at least one end station and the at least one pre-chill station; and a controller configured to cause a wafer to be loaded into the at least one pre-chilled station and cooled to a predetermined temperature range before the wafer is loaded into the end station to undergo an ion implantation process.
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32. A method for ion implantation and dopant activation, the method comprising the steps of:
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performing an ion implantation process on a wafer, wherein, during the ion implantation process, a temperature of the wafer is maintained within a range that is lower than room temperature; and performing a diffusion-less anneal on the wafer after the ion implantation process. - View Dependent Claims (33, 34, 35)
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Specification