Integrated circuitry, electromagnetic radiation interaction components, transistor devices and semiconductor construction; and methods of forming integrated circuitry, electromagnetic radiation interaction components, transistor devices and semiconductor constructions
First Claim
1. A method of forming a semiconductor construction, comprising:
- forming at least one cavity in a first semiconductor material; and
epitaxially growing a second semiconductor material over the first semiconductor material and bridging across the at least one cavity.
6 Assignments
0 Petitions
Accused Products
Abstract
Some embodiments include formation of at least one cavity in a first semiconductor material, followed by epitaxially growing a second semiconductor material over the first semiconductor material and bridging across the at least one cavity. The cavity may be left open, or material may be provided within the cavity. The material provided within the cavity may be suitable for forming, for example, one or more of electromagnetic radiation interaction components, transistor gates, insulative structures, and coolant structures. Some embodiments include one or more of transistor devices, electromagnetic radiation interaction components, transistor devices, coolant structures, insulative structures and gas reservoirs.
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Citations
89 Claims
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1. A method of forming a semiconductor construction, comprising:
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forming at least one cavity in a first semiconductor material; and epitaxially growing a second semiconductor material over the first semiconductor material and bridging across the at least one cavity. - View Dependent Claims (2, 3, 4, 5, 6)
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7. A method of forming an electromagnetic radiation conduit, comprising:
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forming a trench extending into a first semiconductor material; and epitaxially growing a second semiconductor material bridge across the trench to convert the trench to a conduit contained within the first and second semiconductor materials.
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8-14. -14. (canceled)
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15. A method of cooling semiconductor devices, comprising:
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forming trenches within a first semiconductor material; epitaxially growing second semiconductor material across the first semiconductor material, the second semiconductor material bridging across the trenches to convert the trenches to conduits; forming at least one integrated circuit device supported by the semiconductor materials; and providing coolant within the conduits.
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16. (canceled)
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17. (canceled)
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18. A method of forming a gettering region for an integrated circuit, comprising:
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forming at least one opening within a first semiconductor material; epitaxially growing second semiconductor material across the first semiconductor material, the second semiconductor material bridging across the at least one opening; forming at least one integrated circuit device supported by the semiconductor materials; and utilizing surfaces within the at least one opening to getter substances from one or both of the first and second semiconductor materials.
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19-23. -23. (canceled)
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24. A method of forming a gas reservoir for an integrated circuit, comprising:
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forming at least one opening within a first semiconductor material; epitaxially growing second semiconductor material across the first semiconductor material, the second semiconductor material bridging across the at least one opening; substantially sealing gas within the at least one opening; and forming at least one integrated circuit device to be supported by the semiconductor materials.
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25-29. -29. (canceled)
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30. A method of imparting strain to a region of a semiconductor material, comprising:
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forming at least one opening within the semiconductor material; epitaxially growing a cap across the at least one opening; forming at least one composition having a coefficient of thermal expansion different from the semiconductor material within the at least one opening; and subjecting the at least one composition and the semiconductor material to a temperature which induces strain on the semiconductor material through differences in the thermal expansion characteristics of the semiconductor material relative to the at least one composition.
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31-34. -34. (canceled)
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35. A method of forming a transistor device, comprising:
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forming one or more openings extending into a first semiconductor material; epitaxially growing a second semiconductor material across the first semiconductor material, the second semiconductor material bridging across the one or more openings; forming a transistor gate over the second semiconductor material; forming a pair of conductively-doped source/drain regions within the second semiconductor material and proximate the transistor gate;
the source/drain regions being spaced from one another by a channel region within the second semiconductor material directly beneath the transistor gate; andwherein the one or more openings are directly beneath at least one of the channel region and the source/drain regions.
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36-41. -41. (canceled)
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42. A method of forming a transistor device, comprising:
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forming an opening extending into a first semiconductor material; epitaxially growing a second semiconductor material across the first semiconductor material to bridge across the opening and form a trough over the opening; forming a transistor gate extending into the trough; and forming a pair of conductively-doped source/drain regions within the second semiconductor material and proximate the transistor gate;
the source/drain regions being spaced from one another by a channel region within the second semiconductor material between the transistor gate and the opening.
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43. A method of forming a transistor device, comprising:
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forming an opening extending into a first semiconductor material; lining the opening with dielectric material; epitaxially growing a second semiconductor material to bridge across the opening; filling the lined opening with electrically conductive material; and forming a pair of conductively-doped source/drain regions within at least one of the first and second semiconductor materials and proximate the conductive material;
the source/drain regions being spaced from one another by a channel region within at least one of the first and second semiconductor materials;
the conductive material gatedly connecting the source/drain regions to one another through the channel region.
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44-50. -50. (canceled)
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51. Integrated circuitry, comprising:
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a monocrystalline semiconductor material having conduits extending therein; one or more devices over the semiconductor material; and coolant within the conduits. - View Dependent Claims (52, 53, 54, 55, 56, 57, 58)
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59. Integrated circuitry, comprising:
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a monocrystalline semiconductor material having an opening therein;
the semiconductor material having a front surface and opposing back surface, and the opening being contained between the front and back surfaces;
the opening having a periphery of the monocrystalline semiconductor material;
the semiconductor material of said periphery having lattice defects therein; andone or more integrated circuit devices over the front surface of the monocrystalline semiconductor material.
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60-63. -63. (canceled)
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64. Integrated circuitry, comprising:
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a monocrystalline semiconductor material having an opening contained therein; gas substantially sealed within the opening; and one or more integrated circuit devices supported by the monocrystalline semiconductor material.
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65-67. -67. (canceled)
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68. Integrated circuitry, comprising:
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a monocrystalline semiconductor material having one or more openings contained therein; a transistor gate over the monocrystalline semiconductor material; a pair of conductively-doped source/drain regions within the monocrystalline semiconductor material and proximate the transistor gate;
the source/drain regions being spaced from one another by a channel region within the monocrystalline semiconductor material directly beneath the transistor gate; andwherein the one or more openings are directly beneath at least one of the channel region and the source/drain regions.
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69-74. -74. (canceled)
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75. Integrated circuitry, comprising:
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a monocrystalline semiconductor material having an opening contained therein, and having a trough directly over the opening; a transistor gate extending into the trough; and a pair of conductively-doped source/drain regions within the monocrystalline semiconductor material and proximate the transistor gate;
the source/drain regions being spaced from one another by a channel region within the monocrystalline semiconductor material between the transistor gate and the opening.
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76-77. -77. (canceled)
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78. Integrated circuitry, comprising:
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a monocrystalline semiconductor material having an opening contained therein; dielectric material lining the opening; electrically conductive material within the lined opening; and a pair of conductively-doped source/drain regions within the monocrystalline semiconductor material and proximate the conductive material;
the source/drain regions being spaced from one another by a channel region within the monocrystalline semiconductor material;
the conductive material gatedly connecting the source/drain regions to one another through the channel region.
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79-82. -82. (canceled)
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83. A semiconductor construction, comprising:
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a monocrystalline semiconductor material having an opening contained therein; and at least one composition within the opening and having a coefficient of thermal expansion different from the monocrystalline semiconductor material.
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84-87. -87. (canceled)
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88. A electromagnetic radiation interaction component, comprising:
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a monocrystalline semiconductor material having an opening contained therein; and wherein different light refracting properties are within the opening than are comprised by the monocrystalline semiconductor material.
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89-91. -91. (canceled)
Specification