Integrated circuitry, electromagnetic radiation interaction components, transistor devices and semiconductor construction; and methods of forming integrated circuitry, electromagnetic radiation interaction components, transistor devices and semiconductor constructions

• US 20080044979A1
• Filed: 08/18/2006
• Published: 02/21/2008
• Est. Priority Date: 08/18/2006
• Status: Active Grant

• Current Assignee: Micron Technology, Inc.
• Original Assignee: Micron Technology, Inc.
• Inventors: Wells, David H., Blomiley, Eric R.
• Granted Patent: US 7,557,002 B2
• Time in Patent Office: Days
• US Class Current: 438/424
• CPC Class Codes: H01L 21/3221 of silicon bodies, e.g. for gettering
• CPC Class Codes: H01L 29/1083 with an inactive supplementary region, e.g. for preventing punch-through, improving capacity effect or leakage current
• CPC Class Codes: H01L 29/7833 with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's for thin film transistors H01L29/78618
• CPC Class Codes: H01L 29/7849 the means being provided under the channel
• CPC Class Codes: H01L 29/78648 arranged on opposing sides of the channel
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: H10B 10/00 Static random access memory [SRAM] devices
• CPC Class Codes: H10B 12/00 Dynamic random access memory [DRAM] devices
• CPC Class Codes: H10B 12/05 Making the transistor

Abstract

Some embodiments include formation of at least one cavity in a first semiconductor material, followed by epitaxially growing a second semiconductor material over the first semiconductor material and bridging across the at least one cavity. The cavity may be left open, or material may be provided within the cavity. The material provided within the cavity may be suitable for forming, for example, one or more of electromagnetic radiation interaction components, transistor gates, insulative structures, and coolant structures. Some embodiments include one or more of transistor devices, electromagnetic radiation interaction components, transistor devices, coolant structures, insulative structures and gas reservoirs.

Claims

1. A method of forming a semiconductor construction, comprising:

forming at least one cavity in a first semiconductor material; and

epitaxially growing a second semiconductor material over the first semiconductor material and bridging across the at least one cavity.

2. The method of claim 1 wherein the forming of the at least one cavity comprises etching the at least one cavity into the first semiconductor material.

3. The method of claim 1 further comprising forming a liner within the at least one cavity prior to epitaxially growing the second semiconductor material.

4. The method of claim 1 further comprising exposing a region of the at least one cavity after growing the second semiconductor material, and at least partially filling the at least one cavity through the exposed region.

5. The method of claim 1 wherein the forming the at least one cavity in the first semiconductor material comprises forming the at least one cavity in monocrystalline silicon.

6. The method of claim 1 wherein the first and second semiconductor materials are the same composition as one another.

7. A method of forming an electromagnetic radiation conduit, comprising:

forming a trench extending into a first semiconductor material; and

epitaxially growing a second semiconductor material bridge across the trench to convert the trench to a conduit contained within the first and second semiconductor materials.

8-14. -14. (canceled)

15. A method of cooling semiconductor devices, comprising:

forming trenches within a first semiconductor material;

epitaxially growing second semiconductor material across the first semiconductor material, the second semiconductor material bridging across the trenches to convert the trenches to conduits;

forming at least one integrated circuit device supported by the semiconductor materials; and

providing coolant within the conduits.

16. (canceled)

17. (canceled)

18. A method of forming a gettering region for an integrated circuit, comprising:

forming at least one opening within a first semiconductor material;

epitaxially growing second semiconductor material across the first semiconductor material, the second semiconductor material bridging across the at least one opening;

forming at least one integrated circuit device supported by the semiconductor materials; and

utilizing surfaces within the at least one opening to getter substances from one or both of the first and second semiconductor materials.

19-23. -23. (canceled)

24. A method of forming a gas reservoir for an integrated circuit, comprising:

forming at least one opening within a first semiconductor material;

epitaxially growing second semiconductor material across the first semiconductor material, the second semiconductor material bridging across the at least one opening;

substantially sealing gas within the at least one opening; and

forming at least one integrated circuit device to be supported by the semiconductor materials.

25-29. -29. (canceled)

30. A method of imparting strain to a region of a semiconductor material, comprising:

forming at least one opening within the semiconductor material;

epitaxially growing a cap across the at least one opening;

forming at least one composition having a coefficient of thermal expansion different from the semiconductor material within the at least one opening; and

subjecting the at least one composition and the semiconductor material to a temperature which induces strain on the semiconductor material through differences in the thermal expansion characteristics of the semiconductor material relative to the at least one composition.

31-34. -34. (canceled)

35. A method of forming a transistor device, comprising:

forming one or more openings extending into a first semiconductor material;

epitaxially growing a second semiconductor material across the first semiconductor material, the second semiconductor material bridging across the one or more openings;

forming a transistor gate over the second semiconductor material;

forming a pair of conductively-doped source/drain regions within the second semiconductor material and proximate the transistor gate;

the source/drain regions being spaced from one another by a channel region within the second semiconductor material directly beneath the transistor gate; and

wherein the one or more openings are directly beneath at least one of the channel region and the source/drain regions.

36-41. -41. (canceled)

42. A method of forming a transistor device, comprising:

forming an opening extending into a first semiconductor material;

epitaxially growing a second semiconductor material across the first semiconductor material to bridge across the opening and form a trough over the opening;

forming a transistor gate extending into the trough; and

forming a pair of conductively-doped source/drain regions within the second semiconductor material and proximate the transistor gate;

the source/drain regions being spaced from one another by a channel region within the second semiconductor material between the transistor gate and the opening.

43. A method of forming a transistor device, comprising:

forming an opening extending into a first semiconductor material;

lining the opening with dielectric material;

epitaxially growing a second semiconductor material to bridge across the opening;

filling the lined opening with electrically conductive material; and

forming a pair of conductively-doped source/drain regions within at least one of the first and second semiconductor materials and proximate the conductive material;

the source/drain regions being spaced from one another by a channel region within at least one of the first and second semiconductor materials;

the conductive material gatedly connecting the source/drain regions to one another through the channel region.

44-50. -50. (canceled)

51. Integrated circuitry, comprising:

a monocrystalline semiconductor material having conduits extending therein;

one or more devices over the semiconductor material; and

coolant within the conduits.

52. The integrated circuitry of claim 51 wherein the monocrystalline semiconductor material comprises one or more of Si, Ge, Ga, Ga/Al, Si/Ge, Ga/As, SiC, and Ga/Al/N.

53. The integrated circuitry of claim 51 wherein the monocrystalline semiconductor material is monocrystalline silicon.

54. The integrated circuitry of claim 51 wherein the coolant comprises fluid.

55. The integrated circuitry of claim 51 wherein the coolant comprises liquid.

56. The integrated circuitry of claim 51 wherein the coolant comprises gas.

57. The integrated circuitry of claim 51 wherein the coolant comprises a gel only partially filling the conduits.

58. The integrated circuitry of claim 51 wherein the coolant comprises a solid only partially filling the conduits.

59. Integrated circuitry, comprising:

a monocrystalline semiconductor material having an opening therein;

the semiconductor material having a front surface and opposing back surface, and the opening being contained between the front and back surfaces;

the opening having a periphery of the monocrystalline semiconductor material;

the semiconductor material of said periphery having lattice defects therein; and

one or more integrated circuit devices over the front surface of the monocrystalline semiconductor material.

60-63. -63. (canceled)

64. Integrated circuitry, comprising:

a monocrystalline semiconductor material having an opening contained therein;

gas substantially sealed within the opening; and

one or more integrated circuit devices supported by the monocrystalline semiconductor material.

65-67. -67. (canceled)

68. Integrated circuitry, comprising:

a monocrystalline semiconductor material having one or more openings contained therein;

a transistor gate over the monocrystalline semiconductor material;

a pair of conductively-doped source/drain regions within the monocrystalline semiconductor material and proximate the transistor gate;

the source/drain regions being spaced from one another by a channel region within the monocrystalline semiconductor material directly beneath the transistor gate; and

wherein the one or more openings are directly beneath at least one of the channel region and the source/drain regions.

69-74. -74. (canceled)

75. Integrated circuitry, comprising:

a monocrystalline semiconductor material having an opening contained therein, and having a trough directly over the opening;

a transistor gate extending into the trough; and

a pair of conductively-doped source/drain regions within the monocrystalline semiconductor material and proximate the transistor gate;

the source/drain regions being spaced from one another by a channel region within the monocrystalline semiconductor material between the transistor gate and the opening.

76-77. -77. (canceled)

78. Integrated circuitry, comprising:

a monocrystalline semiconductor material having an opening contained therein;

dielectric material lining the opening;

electrically conductive material within the lined opening; and

a pair of conductively-doped source/drain regions within the monocrystalline semiconductor material and proximate the conductive material;

the source/drain regions being spaced from one another by a channel region within the monocrystalline semiconductor material;

the conductive material gatedly connecting the source/drain regions to one another through the channel region.

79-82. -82. (canceled)

83. A semiconductor construction, comprising:

a monocrystalline semiconductor material having an opening contained therein; and

at least one composition within the opening and having a coefficient of thermal expansion different from the monocrystalline semiconductor material.

84-87. -87. (canceled)

88. A electromagnetic radiation interaction component, comprising:

a monocrystalline semiconductor material having an opening contained therein; and

wherein different light refracting properties are within the opening than are comprised by the monocrystalline semiconductor material.

89-91. -91. (canceled)