Method for Fabricating A Semiconductor Device Comprising Surface Cleaning

• US 20080044990A1
• Filed: 06/29/2007
• Published: 02/21/2008
• Est. Priority Date: 08/18/2006
• Status: Abandoned Application

• Current Assignee: Hynix Semiconductor Incorporated (SK Hynix Inc.)
• Original Assignee: Hynix Semiconductor Incorporated (SK Hynix Inc.)
• Inventors: Lee, Sang Ho
• Application Number:
  US11/771,498
• Publication Number:
  US 20080044990A1
• Time in Patent Office: Days
• US Class Current: 438/586
• CPC Class Codes: C23G 1/103 copper or alloys of copper
• CPC Class Codes: C23G 1/106 refractory metals
• CPC Class Codes: C23G 1/125 aluminium
• CPC Class Codes: H01L 21/02063 the processing being the formation of vias or contact holes

Abstract

A method for fabricating a semiconductor device including surface cleaning includes forming a gate stack on a semiconductor substrate, cleaning contaminants present on the surface of the semiconductor substrate exposed through a contact hole using an etchant including a fluorine (F)-containing species dispersed in an alcohol, and filling a contact hole with a conductive layer to form a connection contact. The etchant preferably has a low selectivity of 1 or less.

Claims

1. A method for fabricating a semiconductor device, the method comprising cleaning contaminants on the surface of a cleaning target layer using an etchant comprising a fluorine (F)-containing species dispersed in an alcohol.

2. The method according to claim 1, wherein the cleaning target layer is selected from the group consisting of silicon substrates, polycrystalline silicon layers, amorphous silicon layers, tungsten (W) layers, tungsten nitride (WN) layers, tungsten silicide (WSi_x) layers, titanium (Ti) layers, titanium nitride (TiN) layers, copper (Cu) layers, aluminum (Al) layers, and zinc (Zn) layers.

3. The method according to claim 1, wherein:

the alcohol comprises isopropyl alcohol (IPA),

the fluorine (F)-containing species comprises at least one of hydrofluoric acid (HF), fluoride ions (F⁻

), and bifluoride ions (HF₂⁻

), and

the etchant comprises not less than 80% by weight of the alcohol and less than 20% by weight of the fluorine (F)-containing species.

4. The method according to claim 1, wherein:

the alcohol comprises a glycol,

the fluorine (F)-containing species comprises at least one of hydrofluoric acid (HF), fluoride ions (F⁻

), and bifluoride ions (HF₂⁻

), and

the etchant comprises not less than 80% by weight of the alcohol, and less than 20% by weight of the fluorine (F)-containing species.

5. The method according to claim 1, wherein the etchant further comprises a surfactant as a dispersant for the fluorine (F)-containing species.

6. The method according to claim 1, wherein the etchant comprises less than 10% by weight water.

7. The method according to claim 1, comprising preparing the etchant by mixing the alcohol with a hydrofluoric acid (HF) solution.

8. The method according to claim 1, wherein the step of cleaning contaminants comprises using the etchant to remove a native oxide present on the surface of the cleaning target layer.

9. A method for fabricating a semiconductor device, the method comprising cleaning contaminants on the surface of a cleaning target layer exposed through an insulating layer using an etchant comprising a fluorine (F)-containing species dispersed in an alcohol.

10. The method according to claim 9, wherein:

the alcohol comprises at least one of isopropyl alcohol (IPA) and glycol,

the fluorine (F)-containing species comprises at least one of hydrofluoric acid (HF), fluoride ions (F⁻

), and bifluoride ions (HF₂⁻

), and

the etchant comprises not less than 80% by weight of the alcohol, and less than 20% by weight of the fluorine (F)-containing species.

11. The method according to claim 9, wherein the insulating layer is selected from the group consisting of boron phosphorus silicate glass (BPSG), phosphorus silicate glass (PSG), borosilicate glass (BSG), low pressure tetra ethyl ortho silicate (LP-TEOS), plasma enhanced tetra ethyl ortho silicate (PE-TEOS), high density plasma (HDP) silicon oxide, undoped silicate glass (USG), low pressure (LP) nitride, plasma enhanced (PE) nitride, silicon oxynitride, spin-on-dielectric (SOD), thermal oxide, and combinations thereof.

12. A method for fabricating a semiconductor device comprising:

forming an insulating layer over an underlying layer;

selectively etching the insulating layer to form a contact hole exposing the surface of the underlying layer;

cleaning the contact hole using an etchant comprising a fluorine (F)-containing species dispersed in an alcohol; and

filling the contact hole with a conductive layer.

13. The method according to claim 12, wherein:

the alcohol comprises at least one of isopropyl alcohol (IPA) and glycol,

the fluorine (F)-containing species comprises at least one of hydrofluoric acid (HF), fluoride ions (F⁻

), and bifluoride ions (HF₂⁻

), and

the etchant comprises not less than 80% by weight of the alcohol and less than 20% by weight of the fluorine (F)-containing species.

14. A method for fabricating a semiconductor device comprising:

forming a plurality of gate stacks over a semiconductor substrate, each gate stack including a first conductive layer, a spacer on the side of the gate stack, and a capping layer on the top of the gate stack;

forming an insulating layer over the gate stacks, thereby filling the region between adjacent gate stacks;

etching the insulating layer to form a contact hole by using the spacer and the capping layer as etching barriers;

cleaning the contact hole using an etchant comprising a fluorine (F)-containing species dispersed in an alcohol;

forming a second conductive layer over the insulating layer to fill the contact hole; and

planarizing the second conductive layer to expose the capping layer.

15. The method according to claim 14, wherein the first conductive layer comprises a gate layer comprising an underlying gate dielectric layer, the spacer and the capping layer comprise a silicon nitride layer, the insulating layer comprises a boron phosphorus silicate glass (BPSG) layer, and the method further comprises forming a spacer insulating layer comprising an a undoped silicate glass (USG) layer covering the spacer and the capping layer.

16. The method according to claim 14, comprising selecting the amount of the fluorine (F)-containing species contained in the etchant so that the etchant has an etching ratio for each of the insulating layer, the spacer, and the capping layer relative to contaminants of 3 or less.

17. The method according to claim 14, comprising selecting the amount of the fluorine (F)-containing species contained in the etchant so that the etchant has an etching ratio for each of the insulating layer, the spacer, and the capping layer relative to contaminants of 1 or less.

18. The method according to claim 14, wherein:

the etchant has an etching ratio for each of the insulating layer, the spacer, and the capping layer relative to contaminants of not more than 3,

the alcohol comprises isopropyl alcohol (IPA),

the fluorine (F)-containing species comprises at least one of hydrofluoric acid (HF), fluoride ions (F⁻

), and bifluoride ions (HF₂⁻

), and

the etchant comprises not less than 80% by weight of the alcohol and less than 20% by weight of the fluorine (F)-containing species.

19. The method according to claim 14, wherein the alcohol comprises glycol,

the fluorine (F)-containing species comprises at least one of hydrofluoric acid (HF), fluoride ions (F⁻

), and bifluoride ions (HF₂⁻

), and

the etchant comprises not less than 80% by weight of the alcohol and less than 20% by weight of the fluorine (F)-containing species.

20. The method according to claim 14, wherein the etchant further comprises a surfactant as a dispersant for the fluorine (F)-containing species.

21. The method according to claim 14, wherein the etchant comprises less than 10% by weight water.

22. The method according to claim 14, wherein the step of cleaning the contact hole comprises using the etchant to remove etching residue and/or a native oxide present over the surface of the semiconductor substrate.